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Enhanced quantum metric due to vacancies in graphene

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arxiv 2406.01408 v2 pith:5BTXSDZI submitted 2024-06-03 cond-mat.mes-hall cond-mat.dis-nncond-mat.supr-con

classification cond-mat.mes-hallcond-mat.dis-nncond-mat.supr-con
keywords enhancementstrongvacanciesbandcorrelationsdefectgrapheneimpurity
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Random vacancies in a graphene monolayer induce defect states that are known to form a narrow impurity band centered around zero energy at half-filling. We use a space-resolved formulation of the quantum metric and establish a strong enhancement of the electronic correlations in this impurity band. The enhancement is primarily due to strong correlations between pairs of vacancies situated on different sublattices at anomalously large spatial distances. We trace the strong enhancement to both the multifractal vacancy wave functions, which ties the system exactly at the Anderson insulator transition for all defect concentrations, and preserving the chiral symmetry.

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Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Superdielectrics: Disorder-induced perfect screening in insulators

    cond-mat.mes-hall 2025-08 conditional novelty 6.0 of 10

    Bond-disordered chiral insulators, including SSH chains and vacancy-doped Kekulé graphene, can have a divergent static susceptibility with a finite quantum metric and zero dc conductivity, a regime the authors call su...

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