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Can stress-induced changes in phonon frequencies of ZrSiO4 make it a potential IR spectroscopy-based pressure sensor?

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arxiv 2201.12798 v1 pith:5SIGFIH2 submitted 2022-01-30 cond-mat.mtrl-sci physics.comp-ph

classification cond-mat.mtrl-sciphysics.comp-ph
keywords sensorzrsio4beenmakingmaterialpressurepressuresraman
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Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic pressures highly influence Raman shifts of ZrSiO4. Therefore, zirconium silicate has been suggested as a Raman spectroscopic pressure sensor. However, mass applications of a Raman-based sensor technology poses a wide range of challenges. We demonstrate that ZrSiO4 also exhibits pressure-dependent infrared (IR) spectra. Furthermore, the IR peaks of ZrSiO4 are sensitive to shear stresses and non-hydrostatic pressures, making this material a unique sensor for determining a variety of mechanical stresses through IR spectroscopy.

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