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Epitaxy of Advanced Nanowire Quantum Devices

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arxiv 1705.01480 v3 pith:7LILSOC7 submitted 2017-05-03 cond-mat.mes-hall physics.app-ph

Epitaxy of Advanced Nanowire Quantum Devices

classification cond-mat.mes-hall physics.app-ph
keywords quantumnanowirebraidingdevicesnanowiressuperconductingcouplingepitaxial
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.

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