REVIEW 2 cited by
Revised theoretical limit of subthreshold swing in field-effect transistors
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Signed reviews
read the original abstract
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the extent of a band tail. Since the saturation is universally observed in different types of MOSFETs (regardless of dimension or semiconductor material), the band tail is attributed to the finite periodicity of the lattice in a semiconductor volume, and to a lesser extent to additional lattice perturbations such as defects or disorder.
Forward citations
Cited by 2 Pith papers
-
TCAD Cryogenic Model Parameters Calibration based on 65 nm NMOS Experimental Data
A 65 nm nMOSFET is measured from 292 K to 4.5 K and fitted by TCAD with TEM-derived structure, yielding a single cryogenic parameter set with only saturation velocity made temperature dependent.
-
A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
An invited review of silicon qubits, cryo-CMOS front-end electronics, and cryogenic MOSFET physics, containing a first observation of the kink effect in 28-nm bulk CMOS as its only new result.
Discussion (0). Continue with ORCID to comment.