REVIEW 11 cited by
Distributed Quantum Computing in Silicon
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
read the original abstract
Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors consume remote entanglement distributed between modules to realize distributed quantum logic. Networked quantum computers will therefore require the capability to rapidly distribute high fidelity entanglement between modules. Here we present preliminary demonstrations of some key distributed quantum computing protocols on silicon T centres in isotopically-enriched silicon. We demonstrate the distribution of entanglement between modules and consume it to apply a teleported gate sequence, establishing a proof-of-concept for T centres as a distributed quantum computing and networking platform.
Forward citations
Cited by 11 Pith papers
-
Fault-tolerant distributed quantum computing with a single nucleus per node
Biased photonic Bell pairs let Floquet codes run with one nucleus per node and stabilizer codes with two, purifying links by repeated syndrome measurement rather than distillation.
-
Optical spin readout of a silicon color center in the telecom L-band
The C center in silicon, which emits at 1571 nm, shows optically detected magnetic resonance, providing the first silicon defect with spin readout in the telecom L-band.
-
Optically Resolved Excited State Hyperfine Structure of a Silicon Colour Centre in the Telecom Bands
The hyperfine structure of the excited 1s:3T2 state of the singly ionized interstitial aluminum donor in 28Si has been optically resolved, giving a contact hyperfine coupling of 2.75 µeV.
-
Optical linewidth narrowing for device-coupled single T centers
Above-band optical excitation narrows device-coupled single T-center linewidths by up to 70% via free-carrier filling of charge traps, with dynamics captured by a rate-equation model.
-
Bright Telecom Spin-Photon Interface in Silicon Photonics
Single Al1 centers in silicon emit telecom single photons with a 135 ns lifetime and an optically pumpable spin, demonstrated here for the first time.
-
Epitaxial single T centres in silicon-on-insulator
Single T centres epitaxially grown in silicon-on-insulator via MBE achieve 30 MHz homogeneous linewidths coupled to nanophotonic waveguides, a ten-fold improvement over implanted references.
-
Spectral stability of cavity-enhanced single-photon emitters in silicon
Fabry-Perot integration of erbium-doped silicon reduces spectral diffusion linewidth to 4.0(2) MHz and increases optical coherence time to 20(1) µs, a tenfold improvement over nanophotonic devices.
-
Nonlinear photonic architecture for fault-tolerant quantum computing
A photonic fault-tolerance architecture using deterministic single-photon nonlinearities maintains surface-code loss thresholds of up to 15.1% with QPC-encoded 2-chain resource states.
-
Bright and Purcell-enhanced single photon emission from a silicon G center
A single silicon G center in a nanobeam cavity emits telecom single photons with a 0.97 ns lifetime, a six-fold Purcell enhancement, and about 14% fiber-coupled brightness.
-
Exploring the feasibility of probabilistic and deterministic quantum gates between T centers in silicon
A photon interference-based gate with feedback between silicon T centers can exceed 50 percent success probability and is analytically shown to offer competitive fidelity and efficiency.
-
Single-photon emitters and spin-photon interfaces in silicon
Silicon defects (T, G, W, C centers) and erbium are the leading single-photon emitters in silicon, but reaching the strong light–matter coupling (C≫1) required for quantum networks still needs a roughly 10–1000x reduc...
Discussion (0). Continue with ORCID to comment.