Pith. sign in

REVIEW

On-demand Integrated Quantum Memory for Polarization Qubits

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 2201.03691 v1 pith:BHA4XQBP submitted 2022-01-10 quant-ph

On-demand Integrated Quantum Memory for Polarization Qubits

classification quant-ph
keywords quantumpolarizationintegratedqubitsmemoryabsorptionon-demandcrystal
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
read the original abstract

Photonic polarization qubits are widely used in quantum computation and quantum communication due to the robustness in transmission and the easy qubit manipulation. An integrated quantum memory for polarization qubits is a fundamental building block for large-scale integrated quantum networks. However, on-demand storing polarization qubits in an integrated quantum memory is a long-standing challenge due to the anisotropic absorption of solids and the polarization-dependent features of microstructures. Here we demonstrate a reliable on-demand quantum memory for polarization qubits, using a depressed-cladding waveguide fabricated in a 151Eu3+: Y2SiO5 crystal. The site-2 151Eu3+ ions in Y2SiO5 crystal provides a near-uniform absorption for arbitrary polarization states and a new pump sequence is developed to prepare a wideband and enhanced absorption profile. A fidelity of 99.4\pm0.6% is obtained for the qubit storage process with an input of 0.32 photons per pulse, together with a storage bandwidth of 10 MHz. This reliable integrated quantum memory for polarization qubits reveals the potential for use in the construction of integrated quantum networks.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.