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High-fidelity single-spin shuttling in silicon
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abstract
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 $\mu$m in under 200 ns with an average fidelity of 99.5%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.
Forward citations
Cited by 6 Pith papers
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Snakes on a Plane: mobile, low dimensional logical qubits on a 2D surface
A shuttling-based silicon-spin architecture with logical qubits as mobile 1D strings can tolerate static defects by detecting them with monitor qubits and complementary-gap filtering, then reversing suspected corrupti...
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Baseband control of single-electron silicon spin qubits in two dimensions
Spin hopping between dots with differently tilted quantization axes performs high-fidelity microwave-free single-qubit control in a silicon 2x2 array.
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Electron shuttling as a probe for charge defects
A shuttled electron's spin-dephasing pattern as a function of shuttle distance reveals the position and dynamics of individual charge defects in silicon.
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A trilinear quantum dot architecture for semiconductor spin qubits
A trilinear quantum dot layout with a middle shuttling array could give semiconductor spin qubits two-dimensional connectivity while keeping each dot individually wireable.
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Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays
MAViS autonomously builds a five-layer stack of virtual plunger and barrier gates for a ten-dot Ge/SiGe array, keeping charge states fixed while tuning couplings.
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Near-Term Spin-Qubit Architecture Design via Multipartite Maximally-Entangled States
For near-term spin-qubit devices, compilation can make sparsely connected layouts perform as well as highly connected ones, and crosstalk can erase the benefit of extra connectivity.
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