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Low-Energy Compton Scattering in Materials
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Low-energy Compton scattering is an important background for sub-GeV dark matter direct-detection and other experiments. Current Compton scattering calculations typically rely on assumptions that are not valid in the low-energy region of interest, beneath ~ 50 eV. Here we relate the low-energy Compton scattering differential cross section to the dielectric response of the material. Our new approach can be used for a wide range of materials and includes all-electron, band structure, and collective effects, which can be particularly relevant at low energies. We demonstrate the strength of our approach in several solid-state systems, in particular Si, Ge, GaAs, and SiC, which are relevant for current and proposed experiments searching for dark matter, neutrinos, and millicharged particles.
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SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors
A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.
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