REVIEW
Multiple exciton generation and giant external quantum efficiency in VO₂
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Multiple exciton generation and giant external quantum efficiency in VO₂
read the original abstract
Multiple exciton generation (MEG) is a widely studied phenomenon in semiconductor nanocrystals and quantum dots wherein photo-excited carriers relax by generating additional electron-hole pairs. Here, we present the first experimental observation of MEG and the same leading to giant external quantum efficiency (EQE) in VO$_2$, a prototype strongly correlated material. By employing a photoexcitation (lamda ~ 488 nm) of ~ 4.2 times the bandgap, EQE in VO$_2$ is enhanced up to ~ 170 % at room temperature. Temperature dependent experiments exhibit the direct relation between MEG and strength of electron correlation and suggest that such a phenomenon could be exploited in large number of strongly correlated materials for high performance solar cell research in near future.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.