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Valley contrasting physics in graphene: magnetic moment and topological transport

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arxiv 0709.1274 v1 pith:CWMKOL7Q submitted 2007-09-09 cond-mat.mtrl-sci cond-mat.mes-hall

classification cond-mat.mtrl-scicond-mat.mes-hall
keywords valleymagneticcarrierscontrastingelectricgraphenemomentsystems
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We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the so-called valley-tronics applications.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Valley Hall viscosity in the integer quantum Hall phases of (2+1)D Dirac materials

    cond-mat.mes-hall 2026-07 conditional novelty 7.0 of 10

    Valley-resolved Hall viscosity is finite in gapped Dirac materials, regularizing a previously identified divergence and extending the Hoyos-Son formula to individual valleys.

  2. Intrinsic Topological Control of the Orbital Hall Effect in Buckled Dirac Materials

    cond-mat.mes-hall 2026-05 unverdicted novelty 4.0 of 10

    Orbital Hall conductivity in buckled Dirac materials is boosted around band-inversion points and varies across quantum spin Hall, valley Hall, and anomalous Hall phases via Berry curvature redistribution in a low-ener...

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