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Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator

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arxiv 1703.03122 v1 pith:CZHGCAY4 submitted 2017-03-09 cond-mat.mes-hall

Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator

classification cond-mat.mes-hall
keywords edgetransportchannelscontactinginsulatormagneticmagnetoplasmonsmeasurements
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, even at zero magnetic field. To date, the QAHE has been investigated using low-frequency transport measurements. However, transport requires contacting the sample and results can be difficult to interpret due to the presence of parallel conductive paths, via either the bulk or surface, or because additional non-chiral edge channels may exist. Here, we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb)2Te3. We identify features associated with chiral edge magnetoplasmons (EMPs), a signature that robust edge-channels are indeed intrinsic to this material system. Our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for a new, on-chip circuit element of practical importance: the TI, zero-field microwave circulator.

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