Paper Citation Record · LEDGER

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs

As of 8 August 2026, this Paper Citation Record lists 40 of 40 outbound references and 0 inbound Pith citation observations for arXiv:2506.03732.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2506.03732 v1

Coverage vector

measured 40 of 40 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-07T11:00:33.452172Z

measured 40 of 40 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-08T06:32:00.761636+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

40 of 40 outbound references displayed

verified exact13
verified fuzzy2
unresolved10
parse uncertain0
malformed identifier0
metadata mismatch15

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 98d584b5-1e62-474f-9f1b-2472f1829cb5 · outbound

This paper cites Variability Modeling and Statistical Parameter Extraction for CMOS Devices,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Variability Modeling and Statistical Parameter Extraction for CMOS Devices,

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T11:00:35.446996Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 1104b85a-9d98-4000-ba81-28aac60783b3 · outbound

This paper cites Graphene -Based Microwave Circuits: A Review,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Graphene -Based Microwave Circuits: A Review,

Reference 2

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.318279Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 3db0c077-8f05-41c2-abdd-eeabdbf5f84a · outbound

This paper cites Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics,

Reference 3

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.618937Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation a44fa794-f985-445d-bb67-cfd3e617e6d2 · outbound

This paper cites Distortion-Free Sensing of Neural Activity Using Graphene Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Distortion-Free Sensing of Neural Activity Using Graphene Transistors,

Reference 4

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.609037Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation ceb1db7b-2019-4f05-9039-ae28b62cc977 · outbound

This paper cites Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications,

Reference 5

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:35.416990Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation cdec07c3-11ad-466e-8c38-ff4fe631e235 · outbound

This paper cites Graphene field- b) a) 7 effect transistors as room -temperature terahertz detectors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Graphene field- b) a) 7 effect transistors as room -temperature terahertz detectors,

Reference 6

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.334264Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 856c137e-e4fd-4800-a407-bdfe5ffbb435 · outbound

This paper cites Wafer-Scale Statistical Analysis of Graphene Field -Effect Transistors—Part II: Analysis of Device Properties,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Wafer-Scale Statistical Analysis of Graphene Field -Effect Transistors—Part II: Analysis of Device Properties,

Reference 8

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:35.331334Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 5b9a2815-8a01-4967-8773-2b4683fc1b81 · outbound

This paper cites Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors,

Reference 9

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.592341Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 613b39e2-cd4e-4e43-96b5-3359c1bbbea6 · outbound

This paper cites Bias dependent variability of low-frequency noise in single-layer graphene FETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Bias dependent variability of low-frequency noise in single-layer graphene FETs,

Reference 10

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.581707Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 34d5370b-5600-4490-ab0b-a7597b64e1a4 · outbound

This paper cites Characterization and modeling of mismatch in MOS transistors for precision analog design,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Characterization and modeling of mismatch in MOS transistors for precision analog design,

Reference 11

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:35.238790Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation d7c7b6f6-a63d-4b93-b487-726e4a85c8a7 · outbound

This paper cites Matching Properties of MOS Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Matching Properties of MOS Transistors,

Reference 12

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:35.147637Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation bdbdb43c-3367-4cfc-8d8d-561dbc2b14bd · outbound

This paper cites A CMOS mismatch model and scaling effects,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs A CMOS mismatch model and scaling effects,

Reference 13

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.571407Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 9f4ea2fb-021a-44c8-a7ad-9ea5b09ada73 · outbound

This paper cites A New Five - Parameter MOS Transistor Mismatch Model,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs A New Five - Parameter MOS Transistor Mismatch Model,

Reference 14

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.561557Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation fe0dd084-e180-4c0f-b350-621682ccef9a · outbound

This paper cites An easy-to-use mismatch model for the MOS transistor,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs An easy-to-use mismatch model for the MOS transistor,

Reference 15

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:35.065447Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 1e23deb4-3280-449a-89a3-eb91a72982d8 · outbound

This paper cites Understanding MOSFET Mismatch for Analog Design,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Understanding MOSFET Mismatch for Analog Design,

Reference 16

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.969649Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 93d9395f-87fc-40f2-a13b-799a95fb6a50 · outbound

This paper cites New methodology for drain current local variability characterization using Y function method,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs New methodology for drain current local variability characterization using Y function method,

Reference 17

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.896873Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation e0c495ff-1b3e-454c-be2f-63429bf7f635 · outbound

This paper cites Impact of Source –Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n -MOSFETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Impact of Source –Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n -MOSFETs,

Reference 18

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.831346Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation f4a012c8-7985-46df-aabd-f6873ad2dfeb · outbound

This paper cites Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs,

Reference 19

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.755129Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 0abdc6dc-0cf1-4465-a6c3-bbdfb6f14ba3 · outbound

This paper cites All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14 -nm Fully Depleted SOI MOSFETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14 -nm Fully Depleted SOI MOSFETs,

Reference 20

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.668865Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation cffb84e7-747f-471e-8c35-2d93751ab77d · outbound

This paper cites Variability Modeling in Triple-Gate Junctionless Nanowire Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Variability Modeling in Triple-Gate Junctionless Nanowire Transistors,

Reference 21

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.384038Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 90ea449f-31e4-4025-ada0-fc7f5682560c · outbound

This paper cites Current mismatch due to local dopant fluctuations in MOSFET channel,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Current mismatch due to local dopant fluctuations in MOSFET channel,

Reference 22

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.522625Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 5dfab8e7-6eb3-4853-be70-3103fb501d44 · outbound

This paper cites A compact model of MOSFET mismatch for circuit design,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs A compact model of MOSFET mismatch for circuit design,

Reference 23

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.437094Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 6f9a9761-db92-43d1-b2ae-120014e0a3ce · outbound

This paper cites Modeling of Drain Current Mismatch in Organic Thin -Film Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Modeling of Drain Current Mismatch in Organic Thin -Film Transistors,

Reference 24

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.394367Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 818069be-fe9c-4c3b-bfac-eea8fe364476 · outbound

This paper cites Charge -Based Model for the Drain-Current Variability in Organic Thin -Film Transistors Due to Carrier-Number and Correlated Mobility Fluctuation,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Charge -Based Model for the Drain-Current Variability in Organic Thin -Film Transistors Due to Carrier-Number and Correlated Mobility Fluctuation,

Reference 25

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.253653Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation ce0e55d5-1ff3-447e-af6d-8d42379056ed · outbound

This paper cites Charge Based MOS Transistor Modeling,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Charge Based MOS Transistor Modeling,

Reference 26

Resolution: verified fuzzy; raw_fallback, observed 2026-08-07T11:00:35.432918Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation c549b3f0-629c-4517-b122-4d579b4b1e7d · outbound

This paper cites A compact model for flicker noise in MOS transistors for analog circuit design ,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs A compact model for flicker noise in MOS transistors for analog circuit design ,

Reference 27

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.171827Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 3d708d08-468e-4c5f-9f07-1a348e960463 · outbound

This paper cites A unified model for the flicker noise in metal -oxide-semiconductor field -effect transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs A unified model for the flicker noise in metal -oxide-semiconductor field -effect transistors,

Reference 28

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.551603Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 222b0883-0b31-4124-afc6-30ade254cada · outbound

This paper cites Compact model for the bias - depended low-frequency noise in organic thin -film transistors due to carrier-number and mobility-fluctuation effects,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Compact model for the bias - depended low-frequency noise in organic thin -film transistors due to carrier-number and mobility-fluctuation effects,

Reference 29

Resolution: metadata mismatch; raw_fallback, observed 2026-08-07T11:00:34.098651Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 253315b0-5f71-4a73-8de3-d6f6390b47fb · outbound

This paper cites Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene,

Reference 30

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.541814Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 10cef18e-f941-4e61-bc95-ba414824ad4d · outbound

This paper cites Mobility and saturation velocity in graphene on SiO 2,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Mobility and saturation velocity in graphene on SiO 2,

Reference 31

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.417194Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 94993acd-7e94-4fed-8da5-aa3e33c8ec36 · outbound

This paper cites Mobility and quasi-ballistic charge carrier transport in graphene field -effect transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Mobility and quasi-ballistic charge carrier transport in graphene field -effect transistors,

Reference 32

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.524246Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 9b1de115-d902-4693-8139-d16269815496 · outbound

This paper cites Charge carrier velocity in graphene field-effect transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Charge carrier velocity in graphene field-effect transistors,

Reference 33

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.514228Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation c5445c75-900e-4611-9ef5-47140ca67ca4 · outbound

This paper cites Negative correlation between charge carrier density and mobility fluctuations in graphene ,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Negative correlation between charge carrier density and mobility fluctuations in graphene ,

Reference 34

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.504253Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 6c176cfa-5564-4a29-aa56-5e64c08ca892 · outbound

This paper cites Critical Discussion on Unified 1 /f Noise Models for MOSFETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Critical Discussion on Unified 1 /f Noise Models for MOSFETs,

Reference 35

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.494646Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation bed70f93-c198-416a-8e2d-97ffdf7fcd71 · outbound

This paper cites Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs,

Reference 36

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.434433Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation f68fc172-c694-4788-a698-1ac08348fc4d · outbound

This paper cites Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field -Effect Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field -Effect Transistors,

Reference 37

Resolution: verified exact; doi, observed 2026-08-07T11:00:33.483246Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-08T06:32:00.761636+00:00.

Observation 9355615c-32c6-4ffd-9129-9718abd9bd4a · outbound

This paper cites A Scalable Compact Model for the Static Drain Current of Graphene FETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs A Scalable Compact Model for the Static Drain Current of Graphene FETs,

Reference 38

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.441359Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 1e62e38c-af00-4ae9-9fab-0e8bf3fff0f7 · outbound

This paper cites An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors,

Reference 39

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.444901Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 2f8b0c4b-beb4-473c-996a-10dcd4944d46 · outbound

This paper cites Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single -Layer Graphene FETs,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single -Layer Graphene FETs,

Reference 40

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.448827Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation a8a1d840-153a-45a5-bf1a-5c15e1d2125b · outbound

This paper cites Graphene field -effect transistor TCAD tool for circuit design under freeware,.

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs Graphene field -effect transistor TCAD tool for circuit design under freeware,

Reference 41

Resolution: unresolved; no resolver link, observed 2026-08-07T11:00:33.452172Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Pith citing papers

No inbound Pith citation observations are available.