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High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers

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arxiv 1005.2023 v1 pith:DXA4SDBJ submitted 2010-05-12 cond-mat.supr-con

High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers

Takayoshi Katase , Hidenori Hiramatsu , Toshio Kamiya , Hideo Hosono This is my paper
classification cond-mat.supr-con
keywords bafe2as2highcriticalepitaxialfilmsangleco-dopedcurrent
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle delta omega = 0.5 deg and twist angle delta fai = 0.5 deg) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals.

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