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Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

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arxiv 2301.02025 v1 pith:E3CKLVOU submitted 2023-01-05 cond-mat.mes-hall

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

classification cond-mat.mes-hall
keywords electronicstatesinterfacestackingtwistedwse2antiparallelfilling
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry. The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K. Single band Hubbard model based on the triangular moir\'e lattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe2 devices. Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moir\'e-structured systems.

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