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Transition between canted antiferromagnetic and spin-polarized ferromagnetic quantum Hall states in graphene on a ferrimagnetic insulator
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abstract
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results show that a magnetic proximity effect in graphene is an important ingredient for the development of two-dimensional materials in which it is desirable for ordered states of matter to be tunable with relatively small applied magnetic fields (> 6 T).
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Disorder induced helical-edge transport near $\nu$=0 of monolayer graphene
Monolayer graphene at ν=0 exhibits a disorder-induced metal-insulator transition and transport signatures consistent with helical edge states in the canted antiferromagnetic phase.
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