Paper Citation Record · LEDGER

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films

As of 13 August 2026, this Paper Citation Record lists 5 of 5 outbound references and 0 inbound Pith citation observations for arXiv:2608.07823.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2608.07823 v1

Coverage vector

measured 5 of 5 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-11T04:17:51.827640Z

measured 5 of 5 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

5 of 5 outbound references displayed

verified exact1
verified fuzzy0
unresolved2
parse uncertain0
malformed identifier0
metadata mismatch2

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 75f55a87-14c5-45be-9e24-4f57398a43d6 · outbound

This paper cites High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

Reference 3

Resolution: metadata mismatch; local_arxiv, observed 2026-08-11T04:17:51.942930Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation c2e281c9-b220-4156-b792-972af8c92e67 · outbound

This paper cites B.; Weber, J.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films B.; Weber, J

Reference 4

Resolution: metadata mismatch; raw_fallback, observed 2026-08-11T04:17:51.929673Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation a7764bc8-2d5d-4100-8bcc-76ee48b0c1be · outbound

This paper cites an unresolved cited work.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films Unresolved cited work

Reference 44

Resolution: unresolved; no resolver link, observed 2026-08-11T04:17:51.808714Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation d8b3c213-b1e5-4022-b70a-98b56ab70fb0 · outbound

This paper cites Intrinsic electron mobility limits in β-Ga2O3.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films Intrinsic electron mobility limits in β-Ga2O3

Reference 230

Resolution: unresolved; no resolver link, observed 2026-08-11T04:17:51.827640Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation b47077d9-48cf-4472-93c2-8b84750345f3 · outbound

This paper cites High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics.

Sn-Doping in LPCVD-Grown (010) $\beta$-Ga$_2$O$_3$ Films High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

Reference 2026

Resolution: verified exact; local_arxiv, observed 2026-08-11T04:17:51.956284Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Pith citing papers

No inbound Pith citation observations are available.