Epitaxial Growth of VO$_{2}$ by Periodic Annealing

D. A. Muller; D. G. Schlom; H. Paik; J. A. Moyer; J. A. Mundy; J. H. Lee; J. Schubert; J. W. Tashman; P. Schiffer; R. Misra

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Epitaxial Growth of VO₂ by Periodic Annealing

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arxiv 1310.5021 v4 pith:G6QRZSMN submitted 2013-10-18 cond-mat.mtrl-sci

Epitaxial Growth of VO₂ by Periodic Annealing

J. W. Tashman , J. H. Lee , H. Paik , J. A. Moyer , R. Misra , J. A. Mundy , T. Spila , T. A. Merz

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J. Schubert D. A. Muller P. Schiffer D. G. Schlom

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classification cond-mat.mtrl-sci

keywords filmselectronepitaxygrowthvanadiumwereamorphousangle

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We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change {\Delta}R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Epitaxial Growth of VO₂ by Periodic Annealing

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