Pith. sign in

REVIEW 3 major objections 5 minor 41 references

Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects

T0 review · 3 major / 5 minor · reviewed 2026-08-07 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read This paper reports a ferromagnetic electron gas at the EuTiO3/KTaO3 interface, with a 1000 Oe coercive field and a clear anomalous Hall hysteresis.

desk verdict New ETO/KTO magnetic 2DEG with a claimed 1000 Oe coercivity is a plausible, interesting contribution, but the headline number isn't fully isolated from the rest of the magnetic stack. read the letter →

arxiv 2506.08806 v1 pith:H4ZBUYD2 submitted 2025-06-10 cond-mat.mtrl-sci cond-mat.mes-hall

Zixin Fan , Jiale Chen , Qiangtao Sui , Haoming Ling , Zihao Wang , Lingyuan Kong , Dingyi Li , Fang Yang
show 5 more authors
Run Zhao Hanghui Chen Pan Chen Yan Liang Jiandi Zhang
This is my paper
classification cond-mat.mtrl-scicond-mat.mes-hall
keywords ferromagnetictwo-dimensionalelectrongasEuTiO3/KTaO3interfacemagneticproximityeffectatomdopinganomalousHallKondoweakantilocalizationoxideinterfaces
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports that the interface between the ferromagnetic insulator EuTiO3 (ETO) and the spin-orbit-coupled perovskite KTaO3 (KTO) hosts a two-dimensional electron gas (2DEG) that is itself ferromagnetic. The central observation is a magnetoresistance curve with minima at ±1000 Oe, read as a coercive field, together with a clear anomalous Hall hysteresis that weakens with temperature and disappears near 5 K. The authors argue that neither magnetic proximity from the ETO film nor europium doping acting alone can produce such a strong response; the 1000 Oe coercivity is instead the combined effect of both, with Eu atoms entering potassium vacancies in the KTO surface and forming a graded magnetic interlayer. This matters because magnetic 2DEGs at oxide interfaces have tended to be only weakly magnetic, and the paper offers a recipe, doping plus proximity, that pushes the coercive field far beyond earlier systems such as EuO/KTO. It also connects the low-temperature transport to a Kondo effect from Eu impurities and to weak antilocalization from strong spin-orbit coupling, showing the two contributions compete in the same magnetoresistance.

What carries the argument

The load-bearing system is the ETO/KTO (001) heterostructure, specifically a roughly 1.5 nm interlayer of graded Eu-doped KTaO3 that forms between the ETO film and the KTO substrate when potassium vacancies are created by vacuum annealing; this Eu-doped layer is the 2DEG channel. Three mechanisms act in it: magnetic atom doping, which puts local Eu moments in contact with itinerant Ta 5d electrons and produces the Kondo effect (a logarithmic resistance upturn from magnetic impurities scattering conduction electrons); magnetic proximity from the ferromagnetic insulating ETO film, which is inferred to supply the long-range order; and strong spin-orbit coupling in KTO, which produces weak antilocalization (a magnetoconductance correction from spin-orbit coupling). The analysis hinges on a fitting formula that superposes a $B^2$ classical and electron-electron term, a negative magnetic-scattering term, and an ILP weak-antilocalization term, with weighting coefficients whose temperature-dependent ratio tracks the crossover from magnetic-scattering-dominated to WAL-dominated magnetoresistance. The key assignment is that the field of the MR minima is the coercive field of the FM 2DEG, and the hump-shaped AHE is modelled by two AHE channels of opposite sign representing multiple magnetic domains in the graded interlayer.

What would settle it

Compare transport in the ETO/KTO heterostructure with a control that has the same vacuum-annealed, Eu-doped KTO surface but a nonmagnetic cap such as STO; if the ±1000 Oe MR minima and the AHE loop persist in the control, Eu doping alone is sufficient, while their disappearance would confirm that proximity from ETO is required, settling which mechanism drives the coercivity.

Watch

Extended reading notes

Core claim

On the authors' own account, the discovery is that a ferromagnetic 2DEG forms at the ETO/KTO interface and is much harder to flip than previous magnetic oxide-interface 2DEGs. The evidence is the butterfly-shaped MR curve with minima at ±1000 Oe, the temperature-dependent anomalous Hall loops with a hump that peaks at 3 K, and magnetometry showing multi-loop hysteresis in the heterostructure. The ferromagnetism is assigned to two cooperating sources: Eu atoms substituting into K vacancies near the KTO surface, which dope the Ta 5d bands and create local moments, and magnetic proximity from the 10.7 nm ETO film, whose own out-of-plane coercivity is only about 400 Oe. First-principles calculations on Eu-doped KTO show a metallic state in which the Eu-f moments couple to itinerant Ta-d electrons but do not order by themselves, supporting the Kondo picture and leaving the proximity effect as the likely source of long-range order in the 2DEG. The authors therefore conclude that the high coercivity is a combined doping-plus-proximity effect, not a single-mechanism one.

Load-bearing premise

The load-bearing assumption is that the field of the magnetoresistance minima is the coercive field of a single ferromagnetic 2DEG channel; if that feature instead comes from a multilayer or multi-domain magnetoresistance effect involving the ETO film or the graded interlayer, the headline 1000 Oe claim would be weakened.

Editorial extensions

If this is right

  • If the combined doping-plus-proximity mechanism is correct, oxide-interface 2DEGs with coercive fields near 1000 Oe and clear AHE hysteresis become accessible, making them more practical for spintronic devices that need a stable remanent state.
  • The observation that the 2DEG's ferromagnetism disappears around 5 K, below the ETO film's ~7 K ordering, implies that proximity transfers magnetism but weakens it, so device operation would be limited to a few kelvin unless the proximity coupling is strengthened.
  • The vanishing of the magnetic-scattering contribution by 10 K and of WAL by 50 K means the transport signatures separate cleanly in temperature, so the same fitting procedure can be used to isolate magnetic and spin-orbit effects in other 2DEGs.
  • The graded Eu concentration across the interlayer is the proposed origin of the multiple magnetic domains and hump-shaped AHE, so controlling that gradient may control the AHE line shape.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • My inference: if the Eu-graded interlayer is really what carries the 2DEG, then the same vacuum-annealing and deposition route should work on other A-site-deficient perovskite surfaces, and the coercivity should scale with Eu concentration; that is testable but not reported.
  • My inference: because the MR-minima coercive field is read from a heterostructure that also contains a 10.7 nm ETO film and a graded interlayer, a local measurement such as Hall bar patterning or scanning magnetometry could determine whether the 1000 Oe feature is a single-channel property or a superposition of several magnetic layers; the paper does not rule out the latter.
  • My inference: the near degeneracy between ferromagnetic and antiferromagnetic Eu-f arrangements in the DFT supercells suggests that doping alone would give at most a very low ordering temperature, so the 5 K order in the 2DEG is a direct measure of the proximity coupling strength, and varying the ETO thickness should tune the 2DEG's coercivity.
  • My inference: the two-channel AHE model used for the hump could be tested by measuring the Hall effect after etching the ETO film away, which would remove the proximity contribution and leave only the doped interlayer; the authors do not report such a comparison.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The paper reports the fabrication of ferromagnetic two-dimensional electron gases (2DEGs) at EuTiO3/KTaO3 (ETO/KTO) interfaces, combining magnetic Eu doping (via K-vacancy-induced Eu incorporation near the interface) with the magnetic proximity effect of the ETO film. The central claims are: (i) the 2DEG exhibits a coercive field of about 1000 Oe, read from the MR minima in Fig. 3(a), which is the highest reported for such oxide-interface 2DEGs; (ii) the anomalous Hall effect shows a hysteresis loop with a hump attributed to multiple magnetic layers/domains; (iii) the low-temperature resistance upturn is described by a Kondo effect with a log-T contribution, supported by DFT calculations of Eu-doped KTO; and (iv) the high-field MR is modeled as a combination of WAL and magnetic scattering, with a temperature-dependent weight ratio r = N/M.

Significance. If the 1000-Oe coercivity truly belongs to the 2DEG, the result would be a substantial advance over previous magnetic 2DEGs, whose coercive fields are typically a few hundred oersted or less (e.g., ~200 Oe for EuO/KTO). The proposed strategy of combining magnetic-atom doping with magnetic proximity is interesting and potentially generalizable. The paper includes a careful structural and chemical characterization (XRD, STEM, EELS) and a comparative STO/KTO control that helps rule out oxygen-vacancy-driven Kondo behavior. The DFT calculations, while not directly proving the proximity effect, provide a plausible microscopic picture for the Kondo coupling. However, the decisive quantitative claim—that the measured hysteresis features are intrinsic to the 2DEG—is not yet supported by a measurement that isolates the 2DEG channel from the magnetic ETO film and interlayer.

major comments (3)
  1. [Results and discussion, Fig. 3(a)] The paper defines the MR-minima field in Fig. 3(a) as the coercive field of the FM 2DEG and uses this value (1000 Oe) as the headline result. This assignment is not secure because the heterostack contains several magnetic entities: the 10.7-nm ETO film (out-of-plane Hc ≈ 400 Oe), a 1.5-nm interlayer with graded Eu concentration (75/50/25%, Fig. S3), and the 2DEG itself. The MPMS data in Fig. 2(b) show multi-loop hysteresis, and the text attributes the hump in the AHE (Fig. 3(b,c)) to 'multiple magnetic layers/domains.' The MR minimum could therefore be a composite feature from the superposition of switching fields of ETO, interlayer, and 2DEG, or from antiparallel (spin-valve-like) configurations, rather than from the reversal of a single 2DEG channel. To support the central claim, the 2DEG contribution must be isolated, for example by measuring a sample from which the ETO and interlayer are removed (or patterned), by using a 2DEG-specific probe, or by demonstrating that the 1000-Oe feature disappears in a nonmagnetic-control stack under identical growth conditions.
  2. [Eq. (3) and Fig. 4] The decomposition of the high-field MR into WAL and magnetic-scattering contributions is obtained by fitting Eq. (3), which contains at least eight free parameters (A, C, D, E, M, N, Bφ, Bso), with no independent constraint on the weights M and N. The statements that WAL and magnetic scattering contribute 'similarly' at 2 K (r=0.98) and that magnetic scattering dominates outside ±0.88 T are readouts of the fit, not model-independent observations. The paper should provide a sensitivity analysis (e.g., fits over different field windows, or a comparison of the full model against WAL-only and magnetic-only models) and report uncertainties on r before claiming a 'synergetic interplay'.
  3. [DFT results, Fig. 5(b)] The near-degeneracy of FM and AFM states for Eu0.25K0.75TaO3 is presented as the key DFT result, but it is obtained with U=4.5 eV, which the paper states is chosen because it is 'close to the AFM-to-FM phase boundary' of bulk ETO. With U placed at a magnetic phase boundary, near-degenerate FM/AFM energies are an expected consequence of the choice, not an independent finding. The authors should scan U (e.g., 4.0-6.0 eV) and show that the qualitative conclusion (weak inter-Eu exchange) is robust over a range of U, or explicitly frame the result as a fine-tuned illustration rather than evidence.
minor comments (5)
  1. [Eq. (3) and surrounding text] The text refers to 'equation (5)' when introducing r = N/M, but the model is given as Eq. (3); either renumber the equations or correct the reference.
  2. [Fig. 3(a) caption] The caption states the measurement range as '-0.2 T to 0.2 T' while the main text uses '+2000 Oe to –2000 Oe'; please make the units consistent throughout the paper.
  3. [Conclusion] The conclusion refers to 'FM 2DGE' instead of 'FM 2DEG'; the typo should be corrected.
  4. [References] References [21] and [27] appear to be the same paper (Zhao et al., Nature Communications 2022); this duplication should be removed.
  5. [Fig. 2(b)] The out-of-plane coercive field of about 400 Oe is mentioned in the text but not marked in the figure; adding a visual marker would help the reader connect the MPMS data to the transport data.

Circularity Check

2 steps flagged · score 6.0 of 10

Headline coercive field is the MR-minimum position by the paper's own definition, and the DFT near-degenerate FM/AFM result is tuned by choosing U at the phase boundary; independent AHE hysteresis partially supports the central FM claim.

  1. self definitional [Results and discussion, Fig. 3(a) paragraph]
    "At 2 K, two neighboring MR minima located at ± 1000 Oe are observed, forming a butterfly-shaped MR-H curve. The MR minima field is defined as the coercive field of the FM 2DEG. The value of this field in the 2DEG is nearly the highest among those reported in literatures."

    The paper's central quantitative claim, 'a high coercive field of 1000 Oe', is not an independent measurement of a coercive field; it is exactly the position of the MR minima, which the paper explicitly defines as the coercive field. The output (Hc of the FM 2DEG) is therefore the input (MR-minimum location) renamed. The identification also assumes a single monolithic 2DEG channel, whereas the paper's own multi-layer/domain interpretation (double AHE model, Eu concentration gradient, ETO film Hc ~400 Oe) indicates the MR minimum is a composite feature.

  2. fitted input called prediction [DFT calculations section and Fig. 5 discussion]
    "We use U = 4.5 eV on Eu-f orbitals because it reproduces the insulating G-type antiferromagnetic (AFM) ground state of bulk ETO and is also close to the AFM-to-FM phase boundary [Fig. S10 and Fig. S11]. ... for each configuration, the FM and AFM states always have very close energies (the energy difference is smaller than 1 meV per Eu). This suggests that the magnetic exchange interaction between Eu-f moments is minimal, making it improbable for Eu-f moments to establish a long-range order."

    The DFT conclusion that FM and AFM states are nearly degenerate is not an independent first-principles prediction: U was deliberately chosen to sit 'close to the AFM-to-FM phase boundary', so the near-degeneracy is nearly built into the calculation. The paper then uses this near-degeneracy as evidence that Eu-f moments cannot establish long-range order, which supports the Kondo-impurity picture. Thus a fitted parameter (U) is read out as a physical conclusion, rather than being a parameter-free prediction.

full rationale

The central ferromagnetism claim has independent support: the AHE shows a temperature-dependent hysteresis loop, which is a transport signal not reducible to the MR-minimum definition. The STO/KTO control experiment independently supports the Eu-impurity origin of the Kondo upturn. However, two load-bearing steps reduce to their own inputs. First, the headline high coercive field (1000 Oe) is defined as the MR-minimum field, so the reported Hc is a relabeled observable rather than an independently determined 2DEG coercivity; the paper's own multi-domain/multilayer interpretation makes this assignment even more insecure. Second, the DFT 'near-degenerate FM/AFM' result is obtained after choosing U to be close to the AFM-to-FM phase boundary, so the subsequent claim that Eu-f exchange is minimal and cannot order is an artifact of the parameter choice. No self-citation load-bearing or uniqueness-imported-from-authors circularity is present. Overall, partial circularity in the headline quantitative claim and in the DFT-based Kondo argument, but the AHE hysteresis and control experiments preserve independent content; score 6 rather than 8.

Assumptions & free parameters 3 free parameters · 6 assumptions · 0 invented entities

The headline result depends on a chain of modeling choices: the interlayer is simplified as Eu0.25K0.75TaO3 without Ti; MR minima are equated with the 2DEG coercive field; the AHE hump is assigned to multi-domain AHE; the proximity effect is inferred rather than calculated; and both Kondo and MR fits use multiple free parameters. These are the items a reader must accept to take the central claim at face value.

free parameters (3)
  • Hubbard U on Eu-f orbitals = 4.5 eV
    Chosen because it reproduces the G-type AFM ground state of bulk ETO and sits near the AFM-to-FM phase boundary; this choice affects the DFT result that FM and AFM states are nearly degenerate.
  • Kondo resistance fit parameters (R0, q, RK(0), TK) = Table S1
    The low-temperature resistance upturn and the claimed Kondo effect are established by fitting R(T) = R0 - q lnT + RK(T) to data; TK and q are fit values, not predictions.
  • Eq. (3) MR fit parameters (A, C, D, E, M, N, Bphi, Bso) = not reported
    The high-field MR is fit to a weighted sum of B2, magnetic scattering, and WAL terms; the claimed synergetic interplay and the ratio r = N/M are extracted from this fit.
assumptions (6)
  • domain assumption The interlayer can be modeled as Eu0.25K0.75TaO3 without Ti, despite EELS showing gradient Eu (75/50/25%) and Ti.
    DFT uses a single 25% substitution and omits Ti for computational efficiency; the transport interpretation then leans on this simplified model.
  • domain assumption The MR minima at +-1000 Oe equal the coercive field of the 2DEG.
    Stated in Result and discussion: 'The MR minima field is defined as the coercive field of the FM 2DEG.' This presupposes the hysteresis is intrinsic to a single 2DEG channel.
  • domain assumption The hump in AHE arises from multiple magnetic domains with opposite AHE signs.
    Figure 3(c) models two AHE contributions; no direct magnetic imaging is provided, and topological Hall effect is excluded by argument rather than measurement.
  • standard math The Kondo formula RK(T) with s=0.225 describes the low-temperature resistance upturn.
    The fit uses the standard Kondo expression from Refs. [28,29]; the claim of Kondo effect depends on this functional form.
  • domain assumption ETO exerts a magnetic proximity effect on the 2DEG, although it is not calculated.
    The paper states computational verification is too expensive and infers proximity from coercive-field consistency and prior literature.
  • domain assumption MR contributions (CO, EEI, magnetic scattering, WAL) add independently in Eq. (3).
    Equation (3) linearly combines four effects with weight factors; the synergetic interplay result depends on this additivity assumption.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects." pith.science (2026). https://pith.science/paper/H4ZBUYD2

@misc{pith2026250608806,
  author       = {Pith},
  title        = {Pith review of: Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/H4ZBUYD2}},
  note         = {Machine review of arXiv:2506.08806}
}
read the original abstract

The advent of magnetic two-dimensional electron gases (2DEGs) at oxide interfaces has provided new opportunities in the field of spintronics. The enhancement of magnetism in 2DEGs at oxide interfaces continues to be a significant challenge, as exemplified by the relatively weak magnetism observed in the classical LaAlO3/SrTiO3 interface. Here, we present ferromagnetic (FM) 2DEGs at the interface fabricated between the FM insulator EuTiO3 (ETO) and the strong spin-orbit coupled (SOC) perovskite insulator KTaO3 (KTO). With the combined effects of magnetic atom doping and magnetic proximity from ETO films, the coercive field of 2DEGs can be significantly enhanced. Magnetoresistance (MR) curve with a high coercive field of 1000 Oe has been observed, in conjunction with a temperature-dependent unambiguous hysteresis loop in the anomalous Hall effect (AHE). Furthermore, within the 2DEGs, we have identified a synergetic interplay between magnetic scattering and the weak antilocalization (WAL) effect on transport. This study provides fresh insights into the formation of FM 2DEGs at ETO/KTO interfaces, and introduce an innovative pathway for creating high-performance magnetic 2DEGs at oxide interfaces.

Discussion (0). Sign in to comment.

Reference graph

Works this paper leans on

41 extracted references · 41 canonical work pages

  1. [1]

    A high -mobility electron gas at the LaAlO 3/SrTiO3 heterointerface[J]

    Ohtomo A, Hwang H Y . A high -mobility electron gas at the LaAlO 3/SrTiO3 heterointerface[J]. Nature, 2004,427(6973):423-426

    work page 2004

  2. [2]

    Superconducting Interfaces Between Insulating Oxides[J]

    Reyren N, Thiel S, Caviglia A D, et al. Superconducting Interfaces Between Insulating Oxides[J]. Science, 2007,317(5842):1196-1199

    work page 2007

  3. [3]

    Discovery of superconductivity in KTaO3 by electrostatic carrier doping[J]

    Ueno K, Nakamura S, Shimotani H, et al. Discovery of superconductivity in KTaO3 by electrostatic carrier doping[J]. Nature Nanotechnology, 2011,6(7):408-412

    work page 2011

  4. [4]

    Two-dimensional superconductivity and anisotropic transport at KTaO 3 (111) interfaces[J]

    Liu C, Yan X, Jin D, et al. Two-dimensional superconductivity and anisotropic transport at KTaO 3 (111) interfaces[J]. Science, 2021,371(6530):716-721

    work page 2021

  5. [5]

    Shubnikov -De Haas Oscillations in SrTiO 3/LaAlO3 Interface[J]

    Ben Shalom M, Ron A, Palevski A, et al. Shubnikov -De Haas Oscillations in SrTiO 3/LaAlO3 Interface[J]. Physical Review Letters, 2010,105(20):206401

    work page 2010

  6. [6]

    Quantization of Hall Res istance at the Metallic Interface between an Oxide Insulator and SrTiO3[J]

    Trier F, Prawiroatmodjo G E D K, Zhong Z, et al. Quantization of Hall Res istance at the Metallic Interface between an Oxide Insulator and SrTiO3[J]. Physical Review Letters, 2016,117(9):096804

    work page 2016

  7. [7]

    Tunable Rashba Spin -Orbit Interaction at Oxide Interfaces[J]

    Caviglia A D, Gabay M, Gariglio S, et al. Tunable Rashba Spin -Orbit Interaction at Oxide Interfaces[J]. Physical Review Letters, 2010,104(12):126803

    work page 2010

  8. [8]

    Optical Manipulation of Rashba Spin –Orbit Coupling at SrTiO 3- Based Oxide Interfaces[J]

    Cheng L, Wei L, Liang H, et al. Optical Manipulation of Rashba Spin –Orbit Coupling at SrTiO 3- Based Oxide Interfaces[J]. Nano Letters, 2017,17(11):6534-6539

    work page 2017

Show all 41 references
  1. [9]

    High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO3 Interfaces[J]

    Zhang H, Yun Y , Zhang X, et al. High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO3 Interfaces[J]. Physical Review Letters, 2018,121(11):116803

    2018

  2. [10]

    Electronic phase separation at the LaAlO3/SrTiO3 interface[J]

    Ariando, Wang X, Baskaran G, et al. Electronic phase separation at the LaAlO3/SrTiO3 interface[J]. Nature Communications, 2011,2(1):188

    2011

  3. [11]

    Tunable spin polarization and superconductivity in engineered oxide interfaces[J]

    Stornaiuolo D, Cantoni C, De Luca G M, et al. Tunable spin polarization and superconductivity in engineered oxide interfaces[J]. Nature Materials, 2016,15(3):278-283

    2016

  4. [12]

    Defect Control of Conventional and Anomalous Electron Transport at Complex Oxide Interfaces[J]

    Gunkel F, Bell C, Inoue H, et al. Defect Control of Conventional and Anomalous Electron Transport at Complex Oxide Interfaces[J]. Physical Review X, 2016,6(3):031035

    2016

  5. [13]

    Long -Range Magnetic Order in Oxide Quantum Wells Hosting Two-Dimensional Electron Gases[J]

    Zhang J, Zhang H, Zhang H, et al. Long -Range Magnetic Order in Oxide Quantum Wells Hosting Two-Dimensional Electron Gases[J]. ACS applied materials & interfaces, 2020,12(25):28775-28782

    2020

  6. [14]

    Magnetic effects at the interface between non-magnetic oxides[J]

    Brinkman A, Huijben M, van Zalk M, et al. Magnetic effects at the interface between non-magnetic oxides[J]. Nature Materials, 2007,6(7):493-496

    2007

  7. [15]

    Diluted Oxide Interfaces with Tunable Ground States[J]

    Gan Y , Christensen D V , Zhang Y , et al. Diluted Oxide Interfaces with Tunable Ground States[J]. Advanced Materials, 2019,31(10):1805970

    2019

  8. [16]

    Magnetic two -dimensional electron gas at the manganite - buffered LaAlO3/SrTiO3 interface[J]

    Zhang H R, Zhang Y , Zhang H, et al. Magnetic two -dimensional electron gas at the manganite - buffered LaAlO3/SrTiO3 interface[J]. Physical Review B, 2017,96(19):195167

    2017

  9. [17]

    High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO 3/SrTiO3 (110) heterostructures[J]

    Wang Z-C, Li Z-N, Ye M, et al. High-mobility spin-polarized quasi-two-dimensional electron gas and large low-field magnetoresistance at the interface of EuTiO 3/SrTiO3 (110) heterostructures[J]. APL Materials, 2024,12(3):031107

    2024

  10. [18]

    Evolution of ferromagnetism in two -dimensional electron gas of LaTiO3/SrTiO3[J]

    Wen F, Cao Y , Liu X, et al. Evolution of ferromagnetism in two -dimensional electron gas of LaTiO3/SrTiO3[J]. Applied Physics Letters, 2018,112(12):122405

    2018

  11. [19]

    A strong ferroelectric ferromagnet created by means of spin–lattice coupling[J]

    Lee J H, Fang L, Vlahos E, et al. A strong ferroelectric ferromagnet created by means of spin–lattice coupling[J]. Nature, 2011,476(7358):114-114

    2011

  12. [20]

    Magnetic properties of insulating RTiO3 thin films[J]

    Chae S C, Chang Y J, Kim D W, et al. Magnetic properties of insulating RTiO3 thin films[J]. Journal of Electroceramics, 2009,22(1):216-220

    2009

  13. [22]

    Magnetic and transport properties of EuTiO 3 thin films doped with Nb[J]

    Kususe Y , Murakami H, Fujita K, et al. Magnetic and transport properties of EuTiO 3 thin films doped with Nb[J]. Japanese Journal of Applied Physics, 2014,53(5S1):05FJ07

    2014

  14. [23]

    Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films[J]

    Wang L, Feng Q, Lee H G, et al. Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films[J]. Nano Lett, 2020,20(4):2468-2477

    2020

  15. [24]

    Reversible manip ulation of the magnetic state in SrRuO 3 through electric-field controlled proton evolution[J]

    Li Z, Shen S, Tian Z, et al. Reversible manip ulation of the magnetic state in SrRuO 3 through electric-field controlled proton evolution[J]. Nat Commun, 2020,11(1):184

    2020

  16. [25]

    Anomalous Hall effect derived from multiple Weyl nodes in high-mobility EuTiO3 films[J]

    Takahashi K S, Ishizuka H, Murata T, et al. Anomalous Hall effect derived from multiple Weyl nodes in high-mobility EuTiO3 films[J]. Science Advances,4(7):eaar7880

  17. [26]

    Carrier density control of magnetism and Berry phases in doped EuTiO3[J]

    Ahadi K, Gui Z, Porter Z, et al. Carrier density control of magnetism and Berry phases in doped EuTiO3[J]. APL Materials, 2018,6(5):056105

    2018

  18. [27]

    Emergent multiferroism with magnetodielectric coupling in EuTiO3 created by a negative pressure control of strong spin -phonon coupling[J]

    Zhao R, Yang C, Wang H, et al. Emergent multiferroism with magnetodielectric coupling in EuTiO3 created by a negative pressure control of strong spin -phonon coupling[J]. Nature Communications, 2022,13(1):2364

    2022

  19. [28]

    Electrolyte Gate -Controlled Kondo Effect in SrTiO 3[J]

    Lee M, Williams J R, Zhang S, et al. Electrolyte Gate -Controlled Kondo Effect in SrTiO 3[J]. Physical Review Letters, 2011,107(25):256601

    2011

  20. [29]

    Resistance Minimum in Dilute Magnetic Alloys[J]

    Kondo J. Resistance Minimum in Dilute Magnetic Alloys[J]. Progress of Theoretical Physics, 1964,32(1):37-49

    1964

  21. [30]

    Alternative to the topological interpretation of the transverse resistivity anomalies in SrRuO3[J]

    Kan D, Moriyama T, Kobayashi K, et al. Alternative to the topological interpretation of the transverse resistivity anomalies in SrRuO3[J]. Physical Review B, 2018,98(18):180408

    2018

  22. [31]

    Berry phase engineering at oxide interfaces[J]

    Groenendijk D J, Autieri C, van Thiel T C, et al. Berry phase engineering at oxide interfaces[J]. Physical Review Research, 2020,2(2):023404

    2020

  23. [32]

    Hump-like structure in Hall signal from ultra -thin SrRuO 3 films without inhomogeneous anomalous Hall effect[J]

    Sohn B, Kim B, Choi J W, et a l. Hump-like structure in Hall signal from ultra -thin SrRuO 3 films without inhomogeneous anomalous Hall effect[J]. Current Applied Physics, 2020,20(1):186-190

    2020

  24. [33]

    Two-channel anomalous Hall effect in SrRuO 3[J]

    Kimbell G, Sass P M, Woltjes B, et al. Two-channel anomalous Hall effect in SrRuO 3[J]. Physical Review Materials, 2020,4(5):054414

    2020

  25. [34]

    Interface -driven topological Hall effect in SrRuO 3-SrIrO3 bilayer[J]

    Matsuno J, Ogawa N, Yasuda K, et al. Interface -driven topological Hall effect in SrRuO 3-SrIrO3 bilayer[J]. Science Advances,2(7):e1600304

  26. [35]

    Ferroelectrically tunable magnetic s kyrmions in ultrathin oxide heterostructures[J]

    Wang L, Feng Q, Kim Y , et al. Ferroelectrically tunable magnetic s kyrmions in ultrathin oxide heterostructures[J]. Nature Materials, 2018,17(12):1087-1094

    2018

  27. [36]

    Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride[J]

    Chi H, Ou Y , Eldred T B, et al. Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride[J]. Nature Communications, 2023,14(1):3222

    2023

  28. [37]

    Two-channel anomalous Hall effect in SrRuO3[J]

    Kimbell G, Sass P M, Woltjes B, et al. Two-channel anomalous Hall effect in SrRuO3[J]. Physical Review Materials, 2020,4(5):054414

    2020

  29. [38]

    A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface[J]

    Joshua A, Pecker S, Ruhman J, et al. A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface[J]. Nature Communications, 2012,3(1):1129

    2012

  30. [39]

    Anomalous magnetoresistance in semiconductors[J]

    Al'tshuler B L, Aronov A G, Larkin A I, et al. Anomalous magnetoresistance in semiconductors[J]. Soviet Journal of Experimental and Theoretical Physics, 1981,54:411

    1981

  31. [40]

    Low -temperature magnetoresistance of (111) (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3[J]

    Bal V V , Huang Z, Han K, e t al. Low -temperature magnetoresistance of (111) (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3[J]. Physical Review B, 2019,99(3):035408

    2019

  32. [41]

    Weak antilocalization and spin precession in quantum wells[J]

    Knap W, Skierbiszewski C, Zduniak A, et al. Weak antilocalization and spin precession in quantum wells[J]. Physical Review B, 1996,53(7):3912-3924

    1996

  33. [42]

    Weak localization in quantum wells with spin-orbit interaction[J]

    Iordanskii S V , Lyanda-Geller Y B, Pikus G E. Weak localization in quantum wells with spin-orbit interaction[J]. Jetp Letters, 1994. This work was supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403000), and the National Natural Scie...

    1994

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.