Pith. sign in

REVIEW 4 major objections 5 minor 53 references

Giant Gate Response of the Charge in an Electron-Lattice Condensate

T0 review · 4 major / 5 minor · reviewed 2026-08-16 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Gating a charge-density-wave condensate in TaS3 nanowires produces a capacitance enhancement of 37 to 112 times the geometric value.

desk verdict A careful measurement of gate-dependent Shapiro steps in o-TaS3, but the 'giant gating' claim rests on an untested assumption that the step height is a clean thermodynamic readout of condensate density. read the letter →

arxiv 2505.02652 v1 pith:HGYFJMW7 submitted 2025-05-05 cond-mat.str-el cond-mat.mes-hall

Maedeh Taheri , Jordan Teeter , Topojit Debnath , Nicholas Sesing , Tina Salguero , Roger K. Lake , Alexander A. Balandin This is my paper · ORCID
classification cond-mat.str-elcond-mat.mes-hall
keywords chargedensitywaveo-TaS3Shapirostepsgiantgateresponseeffectivecapacitancequantumfield-effecttransistorelectron-latticecondensate
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper claims that a gate voltage can directly change the number of electrons in the collective charge-density-wave (CDW) condensate of a quasi-one-dimensional conductor, and that this change is 37 to 112 times larger than geometric capacitance predicts. The evidence comes from back-gated o-TaS3 nanowires: as the gate voltage is swept, the current carried by the sliding condensate at the first Shapiro step shifts in a way that, through $I_1 = e A n_c f_0 \lambda_c$, translates into a large change in condensate density. In the commensurate phase the CDW wavelength is locked to the lattice, so the observed current shift cannot be explained by a wavelength change and must be a density change. A sympathetic reader would care because this offers a concrete mechanism, based on electron-lattice correlations rather than electron-electron interactions, for amplifying the electric-field response of a material beyond what ordinary electrostatics allows, which is relevant to low-power switching and transistor scaling.

What carries the argument

The carrying object is the electron-lattice charge-density-wave (CDW) condensate in o-TaS3, a macroscopic coherent state whose sliding motion produces Shapiro steps under combined DC and RF bias. The load-bearing identity is $I_m = e A n_c m f_0 \lambda_c$, which ties the measured current at the $m$-th step to the condensate carrier density $n_c$, the cross-section $A$, and the fundamental sliding frequency $f_0 = v_c/\lambda_c$. Gate sweeps shift this step current, and in the commensurate phase the wavelength is fixed at $4b$, so the shifts translate directly into density changes. The analysis also uses the Debye screening length $\lambda_D = (\epsilon_\perp k_B T/(2 n_i e^2))^{1/2}$ to assert bulk penetration, and the series-capacitance relation $d\phi_s = dV_{GS} C_{ox}/(C_{ox}+C_B)$ to convert effective capacitance into a quantum capacitance for the condensate.

What would settle it

A direct test would be to repeat the measurement on a wire whose thickness is several times the estimated Debye length, or in a geometry where the gate field is known to be screened at the surface; if the extracted $\delta n_c$ then collapses to the geometric-capacitance prediction, the giant response is a penetration artifact. A second test is to measure $\epsilon_\perp$ and the intrinsic carrier density independently; if the true Debye length is much smaller than the 37.3 nm thickness, the assumed bulk response fails. A third is to check whether the gate-induced shift in $I_1$ survives when $\lambda_c$ is deliberately changed by temperature across the incommensurate-commensurate transition, since a gate-dependent $\lambda_c$ would mimic density modulation.

Watch

Extended reading notes

Core claim

The paper reports that in short-channel nanowires of the quasi-one-dimensional charge-density-wave material o-TaS3, a back-gate voltage changes the density of the CDW condensate by an amount far exceeding the electrostatic prediction for ordinary carriers. Measuring the gate dependence of the fundamental Shapiro-step current and converting it through $I_1 = e A n_c f_0 \lambda_c$, the authors extract $n_c$ versus $V_{GS}$ and find an effective capacitance $C_{\rm eff}=e d\,\delta n_c/\delta V_{GS}$ that exceeds the geometric back-gate capacitance $C_g$ by factors of 37, 48, and 112 at 110, 120, and 140 K. Over a gate sweep from $-75$ V to $-25$ V the zero-temperature condensate density shifts by about $-6.17\times 10^{19}$ cm$^{-3}$. In the commensurate phase ($T\lesssim 140$ K) $\lambda_c$ is locked to $4b$, so the gate-induced change in $I_1$ is attributed to a change in condensate density itself. The authors argue the field penetrates the full 37.3 nm wire thickness because the estimated Debye length (39 to 120 nm) exceeds the thickness, and they extract a very large quantum capacitance for the CDW charge, equivalent to an oxide thickness of 0.013 to 0.39 Å. The physical picture is that the condensate is tied to the lattice, cannot form an accumulation layer, and enters the electrostatics through its large dielectric polarizability, with thermally excited normal carriers providing the remaining screening.

Load-bearing premise

The result stands on the assumption that the gate-induced change in the first Shapiro-step current measures a change in condensate density through $I_1 = e A n_c f_0 \lambda_c$, with $\lambda_c$, the sliding velocity, and the normal-carrier subtraction all behaving as modeled; the bulk-penetration picture also assumes an estimated Debye length that depends on an unmeasured perpendicular dielectric constant and an assumed intrinsic carrier density.

Editorial extensions

If this is right

  • If a gate can directly adjust condensate density by this margin, CDW channels become electrically tunable collective charge reservoirs, not just nonlinear conductors.
  • Effective capacitance values 37 to 112 times $C_g$ mean a back-gated CDW device can produce charge modulation equivalent to an oxide that is tens to hundreds of times thinner, relevant for low-voltage switching.
  • Because the effect appears to be bulk rather than surface when the Debye length exceeds the wire thickness, nanowire diameter becomes a design lever: thinner wires could enhance or suppress field penetration.
  • The extracted quantum capacitance corresponds to an equivalent oxide thickness below one ångström, suggesting the condensate's polarizability is the dominant electrostatic term in the gated structure.
  • The band diagram with decoupled quasi-Fermi levels implies that gating places the condensate and normal carriers in disequilibrium, a state that could be probed by transport or optical experiments.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • The same mechanism should appear in other CDWs with large low-frequency polarizability and low normal-carrier density, such as other trichalcogenides or 1T-TaS2; a comparative study would show whether the 37 to 112 enhancement is generic or specific to o-TaS3.
  • Because the condensate is tied to the lattice, the giant capacitance may not slow the device the way a conventional quantum capacitance would; if so, this is a distinct route to steep subthreshold devices, though speed and energy tests remain to be done.
  • The gate modulation of $n_c$ implies the CDW order parameter itself may be gate-tunable, which could show up as a gate-dependent Peierls transition temperature $T_p$ or gap $2\Delta$; this is a testable extension the paper does not report.
  • If the normal-carrier subtraction is imperfect at higher harmonics, the apparent $C_{\rm eff}$ could be overestimated; a consistency check using second-harmonic steps would distinguish density modulation from waveform distortion.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The paper reports transport measurements on back-gated orthorhombic TaS3 nanowires in the charge-density-wave (CDW) state. The central observation is that the first Shapiro-step current I1, measured under combined DC and RF bias, changes systematically with back-gate voltage below the Peierls transition. Interpreting I1 through Eq. (1) as I1 = e A n_c f0 λ_c, the authors convert this gate-dependent step current into a gate-induced change in the CDW condensate density n_c. They define an effective capacitance C_eff = e d δn_c/δV_GS and find C_eff/C_g between 37 and 112 at temperatures of 110–140 K, far exceeding the geometric back-gate capacitance. The paper attributes this 'giant gating' to direct coupling of the gate field to the electron-lattice condensate, and further derives a large CDW quantum capacitance and presents a band diagram for the gated device. The temperature dependence of n_c is described by a BCS-like formula with n_c(0) ≈ 2.12 × 10^21 cm^-3 and γ = 2.61.

Significance. If the interpretation is correct, this is a significant demonstration of collective-state field-effect amplification: a modest gate voltage changes the condensate charge density by an amount far larger than expected from single-particle electrostatics. The manuscript has notable strengths: the devices show low depinning thresholds, the I1 versus f0 scaling is linear at one gate bias, gate leakage is monitored, and the authors explicitly state the model assumptions used in the analysis. The paper also makes a falsifiable prediction in the form of the C_eff/C_g ratio and the extracted quantum capacitance. However, the central claim hinges on the assumption that the Shapiro-step height is a clean thermodynamic readout of n_c that is insensitive to gate-induced changes in phase-locking fidelity. That assumption is not yet experimentally established, so the quantitative magnitude of the effect—the one-to-two-orders-of-magnitude enhancement—remains provisional.

major comments (4)
  1. [Eq. (1), Figures 2 and 3, and the section 'To probe the gate response...'] The central conversion of the gate-dependent first Shapiro-step current I1 into a change of condensate density δn_c assumes that the CDW remains identically phase-locked at every gate voltage and that the fraction of the condensate participating in synchronized sliding is independent of V_GS. The paper demonstrates I1 ∝ f0 at one gate bias (Figure 1e), but this does not establish gate-independent synchronization fidelity. The reported density changes are only about 1–3% of n_c (e.g., Δn_c = 2.47 × 10^19 cm^-3 on n_c ≈ 2.13 × 10^21 cm^-3 at 110 K), so even a small gate-induced shift in depinning threshold, CDW damping, or RF coupling at the channel would be numerically sufficient to produce the entire 'giant gating' effect. The manuscript does not report control measurements such as I1 versus RF amplitude at fixed V_GS, step width versus V_GS, harmonic amplitude ratios, or frequency dependence at each gate bias. These controls are needed to rule out a gate-tuned phase-locking artifact before the enhancement factor of 37–112 can be accepted as a condensate-density effect.
  2. [Section 'To probe the gate response...' (normal-carrier subtraction) and Extended Data Figure 4] The CDW current is extracted using I_c = I(V_m) − V_m/R(0), where R(0) is the zero-bias resistance at each gate voltage. Because R(0) itself changes slightly with gate bias (Extended Data Figure 4d), and because the subtraction is applied at V_m while R(0) is measured at zero bias, any slight nonlinearity of the normal-carrier branch over the step voltage range will produce a gate-dependent residual that is attributed to the condensate. The manuscript should show raw I–V curves with and without RF at the same V_GS, and should quantify how the extracted I1 depends on the choice of the normal-carrier reference (e.g., a high-field extrapolation versus R(0)).
  3. [Section 'To better understand whether the observed gate-induced modulation is a surface or bulk effect'] The bulk-penetration argument relies on the Debye length estimate λ_D = (ε⊥ k_B T / 2 n_i e^2)^{1/2}, which ranges from 39 to 120 nm for assumed values of ε⊥ between 100ε0 and 1000ε0 and for an intrinsic carrier density n_i estimated from Δ = 60 meV and m* = m0. Since the wire thickness is 37.3 nm, this range spans both full and partial field penetration. The geometric comparison C_eff/C_g itself is based on the cross-section-averaged δn_c multiplied by d and does not require full penetration, but the interpretation of the effect as a bulk response, and the subsequent quantum-capacitance analysis, do depend on this estimate. The authors should either provide a direct measurement of the penetration depth or explicitly state that the bulk interpretation is a model assumption.
  4. [Section 'With these values...' (quantum capacitance) and Figure 4] The extraction of the CDW quantum capacitance C_Qc and the equivalent oxide thickness t_Q,eff (0.013–0.39 Å) rests on two model assumptions: that the CDW condensate cannot form an accumulation layer and therefore its quantum capacitance does not enter the series capacitance governing the surface potential, and that the CDW quasi-Fermi level F_c tracks the electrostatic potential while the normal-carrier quasi-Fermi levels F_n,p remain flat at E_F = 0. These assumptions are stated rather than derived, and the band diagram in Figure 4 is schematic. Because even the sign and magnitude of the quantum capacitance depend on these choices, the authors should support them with a quantitative electrostatic calculation or clearly label the resulting t_Q,eff values as a model-dependent estimate rather than a direct measurement.
minor comments (5)
  1. [Temperature-dependence of λ_c] The sentence stating that λ_c varies from 4b at T ≲ 140 K to 3.92b at 215 K cites reference [18], which is Chang et al. (Nature Phys. 2012) on YBa2Cu3O6.67; this citation appears to be incorrect and should be replaced with a TaS3-specific reference such as Wang et al. (reference [36]).
  2. [Equation (2) and reference [40]] Equation (2) is called the 'BCS gap interpolation formula' and is attributed to reference [40], which concerns the magnetic-field penetration depth in UBe13. A more standard source for this interpolation formula, or a derivation, should be cited.
  3. [Extended Data Figure 2 caption] The quantity d_ac in the sentence 'with d_ac = 0.75 d_th' is not defined; it appears to be a thickness or distance extracted from the dielectric measurement, but the notation should be explained.
  4. [Figure captions and text] There are several typographical and OCR-style artifacts, including 'linear ly' in the Figure 1 caption, 'The Ic scale linearly' in the Extended Data Figure 3 caption, and the repeated occurrence of '𝑑𝑑𝑑𝑑/𝑑𝑑𝑑𝑑' instead of dV/dI. These should be corrected in the final manuscript.
  5. [Device statistics] The quantitative claims are based on two representative devices (L = 4 μm and L = 18 μm). Reporting how many devices were measured in total and whether the C_eff/C_g enhancement was reproduced across all working devices would strengthen the paper.

Circularity Check

0 steps flagged · score 1.0 of 10

No significant circularity: the gate response is read directly from Shapiro-step current and benchmarked against an external geometric capacitance; the only self-citation is background.

full rationale

The central claim rests on a direct measurement chain. The CDW density is extracted from the measured Shapiro-step current via Eq. (1), I_m = e A n_c m f0 lambda_c, and the gate dependence of n_c is obtained from the measured I1 at fixed f0 (Figures 2-3). The BCS interpolation formula, Eq. (2), is fitted to the temperature dependence of these extracted n_c values; it is not used to generate the gate response. The 'giant gating' claim compares the resulting C_eff = e d delta_n_c/delta_V_GS with the conventional back-gate capacitance C_g = epsilon_ox/t_ox ~ 1.12 x 10^-8 F/cm^2, an external electrostatic benchmark not defined in terms of the measured quantity. The quantum capacitance C_Qc is obtained by algebraic re-expression of C_eff with a series body-capacitance correction; it adds no circular dependence on the target result. The only self-citation (ref. 24, Taheri et al., ACS Nano 2022) appears in a background sentence listing prior demonstrations of gate-tunable CDW phases in 2D materials; it is not load-bearing for the derivation. The interpretive assumption that I1 at a Shapiro step tracks condensate density (rather than gate-dependent phase-locking fidelity) is a physical-validity concern and a correctness risk, not a circular reduction. No equation in the paper reduces a claimed prediction to an input by construction.

Assumptions & free parameters 3 free parameters · 5 assumptions · 0 invented entities

The central capacitance enhancement rests on converting a measured current change into a condensate-density change via Eq. (1), and on the assumption that the gate field modulates the full wire thickness. The parameters lambda_c, epsilon_perp, and n_i are inputs from literature or estimation, not measured in this paper, and they directly affect the quantitative claim.

free parameters (3)
  • CDW wavelength lambda_c = 3.96b (average), 4b (commensurate)
    Used in Eq. (1) to convert measured Shapiro-step current I_1 to condensate density n_c. The average value introduces a stated ±1% uncertainty; a gate-dependent lambda_c would change the extracted delta n_c and hence the capacitance enhancement.
  • Perpendicular dielectric constant epsilon_perp = 100*epsilon0 to 1000*epsilon0
    Not measured in this paper. Estimated from a dielectric anisotropy ratio epsilon_parallel/epsilon_perp ~ 10^4 reported for K0.3MoO3. Used to compute the Debye screening length and the body capacitance C_B; a one-order-of-magnitude range is assumed.
  • Intrinsic normal carrier density n_i = 1.9e16 cm^-3 at T = 120 K
    Computed from the standard semiconductor expression with assumed m* = m0 for electrons and holes and half-gap Delta = 60 meV. Used in the Debye length estimate supporting the bulk-penetration assumption.
assumptions (5)
  • domain assumption The Shapiro-step current is given by I_m = e A n_c m f0 lambda_c (Eq. 1).
    Standard result in CDW transport used to extract n_c from the measured step current. Assumes fully coherent sliding and that the CDW current is e n_c v with v = f0 lambda_c.
  • domain assumption The temperature dependence of n_c follows the BCS gap interpolation formula n_c(T) = n_c(0) tanh(gamma sqrt(T_p/T - 1)) (Eq. 2).
    Used to describe the temperature dependence of the condensate density. Established for CDWs and superconductors; the fit in Figure 1(f) supports its applicability here.
  • domain assumption The gate field penetrates the full cross-section of the nanowire because the Debye length lambda_D (39-120 nm) exceeds the wire thickness d = 37.3 nm.
    Central to the claim that the capacitance enhancement is a bulk effect. The Debye length depends on the estimated epsilon_perp and n_i; if lambda_D < d, the response would be surface-dominated and the geometric comparison would change.
  • ad hoc to paper The CDW condensate cannot form an accumulation layer, so its quantum capacitance does not enter the series capacitance that governs the surface potential.
    Introduced to reconcile the huge extracted quantum capacitance with the electrostatic model. This is a theoretical choice specific to this work and is not independently verified.
  • ad hoc to paper In the gated device, the CDW quasi-Fermi level F_c tracks the electrostatic potential while the normal-carrier quasi-Fermi levels F_n,p remain flat at E_F = 0.
    Used to construct the band diagram (Figure 4). The paper itself invokes Kroemer's Lemma of Proven Ignorance, indicating this is a speculative interpretation.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Giant Gate Response of the Charge in an Electron-Lattice Condensate." pith.science (2026). https://pith.science/paper/HGYFJMW7

@misc{pith2026250502652,
  author       = {Pith},
  title        = {Pith review of: Giant Gate Response of the Charge in an Electron-Lattice Condensate},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/HGYFJMW7}},
  note         = {Machine review of arXiv:2505.02652}
}
read the original abstract

Efficient electrical capacitive control is important for the next generation of ultra-low-power and ultra-fast electronics and energy-storage devices. Correlated electronic phases offer a powerful route to enhancing field-effect control beyond the limits of conventional capacitive gating. In such systems, modest gate voltages can couple to an order parameter, producing responses far larger than expected from the electrostatics of non-interacting carriers. It was demonstrated that electron-electron interactions, in which the exchange and correlation energies among electrons lower the chemical potential of an electron system as the electron density increases, can significantly increase the effective capacitance over its geometric capacitance value. Here, we show that the electron-lattice or electron-phonon correlations in charge density wave (CDW) condensate can lead to a giant gate response with the corresponding capacitance enhancement. This unusual phenomenon is demonstrated in the quasi-one-dimensional CDW material, where the gate-induced change in CDW charge density exceeds predictions based on geometrical gate capacitance by one to two orders of magnitude. This "giant gating" effect arises from the coupling of the electric field to the CDW electron-lattice condensate, demonstrating a mechanism for massively amplifying gate response via collective electronic behavior. We quantify the effect by determining the quantum capacitance of the CDW charge and by constructing a band diagram for the gated CDW device. The obtained results can lead to an alternative strategy for continuing the downscaling of the transistor feature size in electronic technology.

Figures

Figures reproduced from arXiv: 2505.02652 by the authors.

Figure 4
Figure 4. Band diagram of the gated CDW channel. The band diagram shows hole-like bands gapped by electron-lattice coupling. A surface potential induces band bending, leading to normal hole accumulation and electron depletion near the oxide interface. The CDW quasi-Fermi level, 𝐹𝐹𝑐𝑐, tracks the electrostatic potential, while the normal carrier quasi-Fermi level, 𝐹𝐹𝑛𝑛,𝑝𝑝, remains flat at 𝐸𝐸𝐹𝐹 = 0, resulting in disequilibrium b… view at source ↗

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

53 extracted references · 51 canonical work pages

  1. [1]

    Ramesh, R. et al. Roadmap on low-power electronics. APL Mater. 12, 099201 (2024)

    work page 2024

  2. [2]

    & Kularatna- Abeywardana, D

    Dissanayake, K. & Kularatna- Abeywardana, D. A review of supercapacitors: Materials, technology challenges, and renewable energy applications. J. Energy Storage 96, 112563 (2024)

    work page 2024

  3. [3]

    Cheema, S. S. et al. Giant energy storage and power density negative capacitance superlattices. Nature 629, 803–809 (2024)

    work page 2024

  4. [4]

    & Datta, S

    Salahuddin, S. & Datta, S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett. 8, 405–410 (2008)

    work page 2008

  5. [5]

    Tan, C. et al. Gate-controlled magnetic phase transition in a van der Waals magnet Fe 5GeTe2. Nano Lett. 21, 5599–5605 (2021)

    work page 2021

  6. [6]

    Polshyn, H. et al. Electrical switching of magnetic order in an orbital Chern insulator. Nature 588, 66–70 (2020)

    2020

  7. [7]

    Superior carrier tuning in ultrathin superconducting materials by electric-field gating

    Liu, P., Lei, B., Chen, X., Wang, L., Wang, X. Superior carrier tuning in ultrathin superconducting materials by electric-field gating. Nature Rev. Phys. 4, 336–352 (2022)

    work page 2022

  8. [8]

    Ueno, K. et al. Electric-field-induced superconductivity in an insulator. Nature Mater. 7, 855– 858 (2008)

    work page 2008

Show all 53 references
  1. [9]

    L., Zaitsev-Zotov, S

    Adelman, T. L., Zaitsev-Zotov, S. V. & Thorne, R. E. Field-effect modulation of charge-density- wave transport in NbSe3 and TaS3. Phys. Rev. Lett. 74, 5264 – 5267 (1995)

    1995

  2. [10]

    Li, L. J. et al. Controlling many-body states by the electric- field effect in a two-dimensional material. Nature 529, 185–189 (2016)

    2016

  3. [11]

    & Schlom, D

    Mannhart, J. & Schlom, D. G. Oxide interfaces –An opportunity for electronics. Science 327, 1607-1611 (2010)

    2010

  4. [12]

    Li, L. et al. Very large capacitance enhancement in a two-dimensional electron system. Science 332, 825-828 (2011)

    2011

  5. [13]

    The dynamics of charge-density waves

    Grüner, G. The dynamics of charge-density waves. Rev. Mod. Phys. 60, 1129–1181 (1988)

    1988

  6. [14]

    On the theory of superconductivity: the one-dimensional case

    Fröhlich, H. On the theory of superconductivity: the one-dimensional case. Proc. R. Soc. M. Taheri, J. Teeter, T. Debnath, N. Sesing, T. Salguero, R. K. Lake*, and A. A. Balandin* - 2025 11 | Page London. Ser. A. Math. Phys. Sci. 223, 296–305 (1954)

    1954

  7. [15]

    Zaitsev-Zotov, S. V. Finite -size effects in quasi -one-dimensional conductors with a charge - density wave. Physics-Uspekhi 47, 533 (2004)

    2004

  8. [16]

    Electronic crystals: an experimental overview

    Monceau, P. Electronic crystals: an experimental overview. Adv. Phys. 61, 325–581 (2012)

    2012

  9. [17]

    Briggs, A. et al. Charge density wave formation, superconductivity and Fermi surface determination in NbSe3: a pressure study. J. Phys. C: Solid State Phys. 13, 2117 (1980)

    1980

  10. [18]

    Chang, J. et al. Direct observation of competition between superconductivity and charge density wave order in YBa2Cu3O6.67. Nature Phys. 8, 871-876 (2012)

    2012

  11. [19]

    Yu, F. H. et al. Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal. Nat. Commun. 12, 3645 (2021)

    2021

  12. [20]

    Hanasaki, N. et al. Interplay between charge density wave and antiferromagnetic order in GdNiC2. Phys. Rev. B 95, 085103 (2017)

    2017

  13. [21]

    Kawasaki, S. et al. Charge-density-wave order takes over antiferromagnetism in Bi 2Sr2- xLaxCuO6 superconductors. Nat. Commun. 8, 1267 (2017)

    2017

  14. [22]

    Yu, Y. et al. Gate-tunable phase transitions in thin flakes of 1T -TaS2. Nature Nanotech. 10, 270–276 (2015)

    2015

  15. [23]

    Liu, G. et al. A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature. Nature Nanotech. 11, 845–850 (2016)

    2016

  16. [24]

    Taheri, M. et al. Electrical gating of the charge -density-wave phases in two -dimensional h- BN/1T-TaS2 devices. ACS Nano, 16 18968 – 18977 (2022)

    2022

  17. [25]

    & Mak, K

    Xi, X., Berger, H., Forró, L., Shan, J. & Mak, K. F. Gate tuning of electronic phase transitions in two-dimensional NbSe2. Phys. Rev. Lett. 117, 106801 (2016)

    2016

  18. [26]

    Zhang, K. et al. Evidence for a quasi-one-dimensional charge density wave in CuTe by angle- resolved photoemission spectroscopy. Phys. Rev. Lett. 121, 206402 (2018)

    2018

  19. [27]

    & Grüner, G

    Zettl, A. & Grüner, G. Phase coherence in the current carrying charge-density-wave state: ac- dc coupling experiments in NbSe

  20. [28]

    Phys. Rev. B 29, 755 (1984). M. Taheri, J. Teeter, T. Debnath, N. Sesing, T. Salguero, R. K. Lake*, and A. A. Balandin* - 2025 12 | Page

    1984

  21. [29]

    A., Zybtsev, S

    Nikonov, S. A., Zybtsev, S. G., Maizlakh, A. A., Pokrovskii, V. Ya., Prediction of the effects of rf irradiation on the I-V curves of a CDW compound. Appl. Phys. Lett. 118, 213106 (2021)

    2021

  22. [30]

    Mihailovic, D. et al. Ultrafast non -thermal and thermal switching in charge configuration memory devices based on 1T-TaS2. Appl. Phys. Lett. 119, 013106 (2021)

    2021

  23. [31]

    Mraz, A. et al. Charge configuration memory devices: Energy efficiency and switching speed. Nano Lett. 22, 4814–4821 (2022)

    2022

  24. [32]

    Yao, C. et al. Electric field effect on the charge density wave in the quasi -one-dimensional semimetal Ta2NiSe7. Phys. Rev. B 110, 165136 (2024)

    2024

  25. [33]

    Mihály, G., Hutiray, Gy., Mihály, L., Macroscopic coherence length of charge-density waves in orthorhombic TaS3. Phys. Rev. B 28, 4896–4899 (1983)

    1983

  26. [34]

    Patra A., Rout, C. S. Anisotropic quasi -one-dimensional layered transition -metal trichalcogenides: synthesis, properties and applications. RCS Adv. 10, 36413-36438 (2020)

    2020

  27. [35]

    Wu, K. et al. Unusual pressure response of vibrational modes in anisotropic TaS 3. J. Phys. Chem. C 121, 28187-28193 (2017)

    2017

  28. [36]

    & Núñez-Regueiro, M

    Meerschaut, A., Rouxel, J., Haen, P., Monceau, P. & Núñez-Regueiro, M. Obtention of a new phase of the one -dimensional compound TaS 3: X -ray characterization and electrical measurements. J. Physique Lett. 40, 157–159 (1979)

    1979

  29. [37]

    Wang, Z.Z. et al. Incommensurate-commensurate transition in TaS3. J. Physique Lett. 44, 311– 319 (1983)

    1983

  30. [38]

    & Gill, J

    Higgs, A. & Gill, J. Hysteresis in the electrical properties of orthorhombic tantalum trisulphide: Evidence for an incommensurate -commensurate charge -density wave transition? Solid State Comms. 47, 737–742 (1983)

    1983

  31. [39]

    Sambongi, T. et al. Peierls transition in TaS3. Solid State Comms. 22, 729–731 (1977)

    1977

  32. [40]

    Zettl, A., Grüner, G., Thompson, A. H. Charge-density-wave transport in orthorhombic TaS3. I. Nonlinear Conductivity. Phys. Rev. B 26, 5760 (1982)

    1982

  33. [41]

    Gross, F. et al. Anomalous temperature dependence of the magnetic field penetration depth in superconducting Ube13. Zeitschrift für Physik B Condensed Matter 64, 175–188 (1986). M. Taheri, J. Teeter, T. Debnath, N. Sesing, T. Salguero, R. K. Lake*, and A. A. Balandin* - 2025 13 | Page

    1986

  34. [42]

    Ong, N. P. et al. Microwave and Hall studies of TaS 3 and NbS3. Mol. Cryst. Liq. Cryst. 81, 41–47 (1981)

    1981

  35. [43]

    I., Savitskaya Ya

    Latyshev, Yu. I., Savitskaya Ya. S., Frolov V. V. Hall effect accompanying a Peierls transition in TaS3. JETP Lett. 38, 541 (1983)

    1983

  36. [44]

    Sinchenko, A. A. et al. Hall effect in the pinned and sliding charge density wave state of NbSe3. J. Phys.: Condens. Matter 21, 435601 (2009)

    2009

  37. [45]

    Sze, S. M. Physics of Semiconductor Devices. 2nd ed. John Wiley & Sons, New York (1981)

    1981

  38. [46]

    H., Zettl, A., Grüner, G

    Thompson, A. H., Zettl, A., Grüner, G. Charge-density-wave transport in TaS3. Phys. Rev. Lett. 47, 64 (1981)

    1981

  39. [47]

    J., Fleming, R

    Cava, R. J., Fleming, R. M., Dunn, R. G., Rietman, E. A. Low -frequency dielectric response of the charge-density wave in orthorhombic TaS

  40. [48]

    Phys. Rev. B 31, 8325 (1985)

    1985

  41. [49]

    Dielectric anisotropy in the charge-density-wave state of K0.3MoO3

    Shu-Nan, M., Maki, M. Dielectric anisotropy in the charge-density-wave state of K0.3MoO3. J. Phys. Soc. Jpn. 80, 084706 (2011)

    2011

  42. [50]

    & Mannhart J

    Kopp, T. & Mannhart J. Calculation of the capacitances of conductors: Perspectives for the optimization of electronic devices. J. Appl. Phys. 106, 064504 (2009)

    2009

  43. [51]

    Noble lecture: Quasielectric fields and band offsets: teaching electrons new tricks

    Kroemer, H. Noble lecture: Quasielectric fields and band offsets: teaching electrons new tricks. Rev. Mod. Phys. 73, 783 (2001)

    2001

  44. [52]

    G., Pokrovskii, V

    Zybtsev, S. G., Pokrovskii, V. Ya., Nasretdinova, V. F., Zaitsev-Zotov, S. V. Gigahertz-range synchronization at room temperature and other features of charge -density wave transport in the quasi-one-dimensional conductor NbS3. Appl. Phys. Lett. 94, 152112 (2009). M. Taheri, J...

    2009

  45. [53]

    Mayorga-Martinez, C. C. et al. TaS3 nanofibers: Layered trichalcogenide for high-performance electronic and sensing devices. ACS Nano 12, 464–473 (2018). M. Taheri, J. Teeter, T. Debnath, N. Sesing, T. Salguero, R. K. Lake*, and A. A. Balandin* - 2025 20 | Page Acknowledgments...

    2018

Pith tools

Reviewed August 16, 2026 · model on record in the stance chip above.