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Study of Silicon Photomultiplier Performance in External Electric Fields

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arxiv 1807.03007 v1 pith:IXBKR3AP submitted 2018-07-09 physics.ins-det

Study of Silicon Photomultiplier Performance in External Electric Fields

X.L. Sun , T. Tolba , G.F. Cao , P. Lv , L.J. Wen , A. Odian , F. Vachon , A. Alamre
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J.B. Albert G. Anton I.J. Arnquist I. Badhrees P.S. Barbeau D. Beck V. Belov T. Bhatta F. Bourque J. P. Brodsky E. Brown T. Brunner A. Burenkov L. Cao W.R. Cen C. Chambers S.A. Charlebois M. Chiu B. Cleveland M. Coon M. C\^ot\'e A. Craycraft W. Cree J. Dalmasson T. Daniels L. Darroch S.J. Daugherty J. Daughhetee S. Delaquis A. Der Mesrobian-Kabakian R. DeVoe J. Dilling Y.Y. Ding M.J. Dolinski A. Dragone J. Echevers L. Fabris D. Fairbank W. Fairbank J. Farine S. Feyzbakhsh P. Fierlinger R. Fontaine D. Fudenberg G. Gallina G. Giacomini R. Gornea G. Gratta E.V. Hansen D. Harris M. Heffner E. W. Hoppe J. H\"o{\ss}l A. House P. Hufschmidt M. Hughes Y. Ito A. Iverson A. Jamil C. Jessiman M.J. Jewell X.S. Jiang A. Karelin L.J. Kaufman D. Kodroff T. Koffas S. Kravitz R. Kr\"ucken A. Kuchenkov K.S. Kumar Y. Lan A. Larson D.S. Leonard G. Li S. Li Z. Li C. Licciardi Y.H. Lin R. MacLellan T. Michel M. Moe B. Mong D.C. Moore K. Murray R.J. Newby Z. Ning O. Njoya F. Nolet O. Nusair K. Odgers M. Oriunno J.L. Orrell G. S. Ortega I. Ostrovskiy C.T. Overman S. Parent A. Piepke A. Pocar J.-F. Pratte D. Qiu V. Radeka E. Raguzin T. Rao S. Rescia F. Reti\`ere A. Robinson T. Rossignol P.C. Rowson N. Roy R. Saldanha S. Sangiorgio S. Schmidt J. Schneider D. Sinclair K. Skarpaas VIII A.K. Soma G. St-Hilaire V. Stekhanov T. Stiegler M. Tarka J. Todd T.I. Totev R. Tsang T. Tsang B. Veenstra V. Veeraraghavan G. Visser J.-L. Vuilleumier M. Wagenpfeil Q. Wang J. Watkins M. Weber W. Wei U. Wichoski G. Wrede S.X. Wu W.H. Wu Q. Xia L. Yang Y.-R. Yen O. Zeldovich J. Zhao Y. Zhou T. Ziegler
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classification physics.ins-det
keywords electricexternalperformancedevicesfieldfieldsphotomultipliersilicon
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We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.

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