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Orbital Kerr effect and terahertz detection via the nonlinear Hall effect

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arxiv 2311.11889 v2 pith:J2T4TSHA submitted 2023-11-20 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci
keywords effectcurrenthallnonlinearorbitalkerrterahertzflowing
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abstract

We investigate the optical response induced by a d.c. current flowing in a nonmagnetic material that lacks inversion symmetry. In this class of materials, the flowing current experiences a nonlinear Hall effect and induces a nonequilibrium orbital magnetization, even in the absence of spin-orbit coupling. As a result, an orbital-driven Kerr effect arises that can be used to probe not only the orbital magnetization but also the nonlinear Hall effect. In addition, in the long wavelength limit, the nonlinear Hall effect leads to a rectification current that can be used to detect terahertz radiation. We apply the theory to selected model systems, such as WTe$_2$ bilayer and metallic superlattices. The nonequilibrium orbital Kerr efficiencies obtained in these systems are comparable to the largest values reported experimentally in GaAs and MoS$_2$, exceeding the values reported in metals and suggesting a large terahertz current responsivity.

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Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Adiabatic Spin and Orbital Pumping in Metallic Heterostructures

    cond-mat.mes-hall 2024-11 conditional novelty 7.0 of 10

    Orbital pumping into a neighboring metal is controlled by d-states at the Fermi level and by spin-orbit coupling, with Ni/Pt and Ni/W predicted to be the strongest orbital injectors.

  2. Facilitating field-free perpendicular magnetization switching with a Berry curvature dipole in a Weyl semimetal

    cond-mat.mes-hall 2024-12 conditional novelty 6.0 of 10

    Current along WTe2's a-axis induces orbital magnetization that switches Fe3GeTe2 without a field, while adding a b-axis pulse separately controls spin-orbit torque.

  3. Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4

    cond-mat.mes-hall 2024-12 conditional novelty 6.0 of 10

    Field-free, all-electric writing of a van der Waals magnetoresistive memory at room temperature is achieved in TaIrTe4/Fe3GaTe2 by current-induced orbital magnetization tied to the Berry curvature dipole.

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