Pith. sign in

REVIEW 1 cited by

Evidence for universal relationship between the measured 1/f permittivity noise and loss tangent created by tunneling atoms

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1507.06043 v1 pith:JVVDWTO6 submitted 2015-07-22 cond-mat.supr-con cond-mat.mes-hall

classification cond-mat.supr-concond-mat.mes-hall
keywords noiselosstangentpermittivitycontainingcreateddevicesfilm
verification ladder T0 review T1 audit T2 compute T3 formal
0 comments
abstract

Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tangent in two film types containing different TS densities. The noise reveals an intrinsic value as well as the crossover to power-saturated noise. The intrinsic $1/f$ noise fits to the temperature dependence $1/T^{1+\mu}$ where $0.2\le\mu\le0.7$, which is related to previous studies and strongly interacting TS. An analysis of the noise normalized by the loss tangent and temperature is quantitatively identical for two film types, despite a factor of 5 difference in their loss tangent. Following from the broad applicability of the TS model, the data supports a universal relationship for amorphous-solid produced permittivity noise. The quantity of the observed noise particularly supports a recent model in which noise is created by weak TS-TS interactions.

Discussion (0). Continue with ORCID to comment.

Forward citations

Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates

    cond-mat.mes-hall 2026-07 conditional novelty 6.0 of 10

    At millikelvin temperatures, trap-rich SOI substrates give the highest superconducting-resonator quality factors; high-resistivity SOI suffers from parasitic sheet conduction at the buried-oxide interface.

Pith tools