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Superlubric Motion of Wave-like Domain Walls in Sliding Ferroelectrics

T0 review · 4 major / 5 minor · reviewed 2026-08-09 · deepseek-v4-flash

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Pith's one-line read Sliding ferroelectric switching is driven by wide, wave-like domain-wall motion, not by coherent layer sliding.

desk verdict The symmetry argument against homogeneous sliding is the real result; the 4000 m/s DW velocities are a model prediction resting on an unverified BEC map. read the letter →

arxiv 2502.01007 v1 pith:K7PNSTY3 submitted 2025-02-03 cond-mat.mtrl-sci physics.comp-ph

Changming Ke , Fucai Liu , Shi Liu This is my paper · ORCID
classification cond-mat.mtrl-sciphysics.comp-ph
keywords slidingferroelectricsbilayerh-BNdomainwallsBorneffectivechargessuperlubricityferroelectricswitchingmoleculardynamicstwisted
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper argues that the long-accepted picture of switching in sliding ferroelectrics, in which two monolayers rigidly slide past each other under an out-of-plane electric field, cannot be right: the three-fold rotational symmetry of the AB and BA stackings cancels any in-plane force, and a synchronous uniform flip would carry an enormous energy barrier. Using Bernal-stacked bilayer boron nitride as a model system, the authors show instead that polarization reversal is carried by wide, roughly ten-nanometer domain walls separating oppositely polarized domains. Only atoms inside the wall break the symmetry, and their off-diagonal Born effective charges let an out-of-plane field push them sideways; molecular dynamics with these dynamic charges shows the wall gliding as a coherent wave packet at speeds around 3000-4000 m/s with an almost zero motion barrier. The same mechanism reproduces the curved triangular domains seen in twisted bilayers and explains why experiments see ultrafast, fatigue-free switching that even speeds up as the sample is cooled. If right, this reframes sliding ferroelectrics as systems where domain walls, not bulk layers, are the active switching element.

What carries the argument

The central object is the $\Sigma_0$-type 180-degree domain wall in Bernal-stacked bilayer h-BN: a wall that runs parallel to the in-plane displacement vector $u$ and separates $P^+$ ($u=(0,u_0)$) and $P^-$ ($u=(0,0)$) domains, with a width of roughly ten nanometers. The load-bearing machinery is the tensorial Born effective charge, the quantum response property that describes how an electric field in one direction produces a force on an atom in another direction; the off-diagonal components $Z^*_{31}$ and $Z^*_{32}$ are exactly zero in the $C_3$-symmetric single domains but nonzero in the symmetry-broken wall region, converting an out-of-plane field $E_3$ into in-plane forces on wall atoms. The authors fit DFT-computed unit-cell-averaged Born effective charges to analytic functions $Z_{3j}(u_x,u_y)$ of the local sliding displacement and insert these into a machine-learned force field for finite-field molecular dynamics. The mechanism is the resulting coherent, wave-like propagation: the wall translates because unit cells with decreasing local energy balance those with increasing local energy, so the net motion barrier is nearly zero, and kinetic friction follows a superlubric form in which velocity grows with field and shrinks with thermal corrugation, producing faster walls at lower temperature.

What would settle it

Measure the switching time of a bilayer h-BN ferroelectric device as a function of temperature from 300 K down to a few kelvin at fixed field: the paper predicts faster switching on cooling. Observing slower switching, or temperature-independent switching, at low temperature would contradict the superlubric-domain-wall mechanism.

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Extended reading notes

Core claim

The central discovery is that polarization reversal in sliding ferroelectrics is governed entirely by the motion of symmetry-breaking domain walls, with no global interlayer translation. In the Bernal-stacked h-BN bilayer, the AB and BA stackings have $C_3$ symmetry, so an out-of-plane electric field produces a strictly zero net in-plane force in single-domain regions; only at the wide $\Sigma_0$-type 180-degree wall, where $C_3$ is broken, do nonzero off-diagonal Born effective charges convert $E_3$ into in-plane forces. These forces push atoms at the wall collectively, and because the wall is about ten nanometers wide, each atom moves only a small fraction of the lattice constant while the wall travels macroscopic distances, a wave-like coherent propagation rather than the nucleation-and-growth, layer-by-layer switching of perovskite ferroelectrics. Finite-field molecular dynamics with a local-environment-dependent Born effective charge model yields wall velocities of roughly 3000 m/s at 293 K and 0.3 V/nm, up to about 4000 m/s, with a near-zero motion barrier, continued inertial motion after the field is switched off, and velocities that increase as temperature decreases; the authors attribute this to structural superlubricity, with the field balancing a kinetic friction that grows with velocity and thermal corrugation.

Load-bearing premise

The argument assumes that the sideways force an out-of-plane electric field exerts on each atom is fully determined by that atom's local in-plane displacement, as encoded in Born effective charges fitted to zero-field DFT; if buckling, strain, or dynamic charge transfer inside the moving wall changes these charges, the near-zero barrier and superlubric speeds could be artifacts.

Editorial extensions

If this is right

  • Electric-field switching in sliding ferroelectrics such as bilayer h-BN is predicted to proceed by domain-wall motion rather than by coherent interlayer sliding, so device switching speed is set by wall velocity, not by the static sliding barrier.
  • Because only wall atoms carry the off-diagonal Born effective charges that couple $E_3$ to in-plane forces, a single-domain sample in a uniform field should be unswitchable: no new domains can nucleate, which can be exploited for deterministic, stochastic-free polarization control.
  • The near-zero motion barrier and superlubric friction imply switching that is fatigue-free and extremely fast, consistent with the reported endurance exceeding 10^11 cycles and nanosecond-scale switching.
  • Domain-wall speed is predicted to increase as temperature decreases, so cryogenic operation should be faster, not slower, in these materials.
  • The same dynamic-Born-effective-charge mechanism reproduces the curved triangular domain patterns in twisted h-BN, indicating that the theory applies beyond the Bernal bilayer.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Because only wall atoms respond to the field, one could pattern or pin domain walls with strain or gates and use them as deterministic multi-state memory elements without stochastic nucleation, an engineering direction the paper sketches but does not develop.
  • The superlubric friction law suggests a quantitative prediction beyond the paper's data: at fixed temperature, switching time should scale with field as roughly $1/E$ with correction from thermal corrugation, which a field-dependent switching-time measurement could test directly.
  • The paper's sine-Gordon analogy implies a maximum wall velocity at ultralow temperature; if the motion is truly Lorentz-invariant, a domain wall driven near that speed would show relativistic-like saturation and effective mass growth, potentially observable in time-resolved switching experiments.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The manuscript argues that polarization reversal in sliding ferroelectrics, modeled by Bernal-stacked bilayer h-BN, cannot proceed by homogeneous interlayer sliding because such a process violates Neumann's principle and carries a prohibitive energy barrier. Instead, switching is governed by the propagation of wide, wave-like Σ0-type 180° domain walls, driven by out-of-plane-field-induced in-plane forces that arise from off-diagonal Born effective charges in C3-broken regions. Using DFT-computed BECs, a fitted interpolation Z3j(u), and machine-learned force-field molecular dynamics, the authors report near-barrierless, superlubric DW motion with velocities up to about 4000 m/s, anomalous cooling-enhanced velocities, and inertial response after field removal. They also report a creep-to-superlubric transition under compressive stress for buckled Σπ/6 walls.

Significance. The symmetry argument is clear and the DFT BEC calculations are carefully presented; the distinction between homogeneous sliding and DW-mediated switching addresses a real inconsistency with experiments on h-BN and related sliding ferroelectrics. If the proposed mechanism is correct, it explains ultrafast, fatigue-free switching, provides the falsifiable prediction of cooling-enhanced DW mobility, and suggests design rules for cryogenic applications. The qualitative reproduction of curved triangular moiré domains is also a notable success. However, the central quantitative claims—superlubric velocities of about 4000 m/s, near-zero motion barrier, cooling enhancement, and the 1/h^2 scaling—currently rest on a fitted BEC map and a heuristic velocity law that has not been independently validated. The stress-test concern about the local validity of the Z3j(u) map inside a moving domain wall is real and load-bearing; it needs to be addressed with direct DFT-force checks or equivalent evidence.

major comments (4)
  1. [§3 (MD simulations of domain walls in sliding ferroelectrics), Fig. 2 and Supplementary III] The Z3j(ux, uy) functions are fitted to unit-cell-averaged Born effective charges from rigidly slid bilayers and then applied locally to atoms inside a moving ~10-nm domain wall. This assumes the field-induced in-plane force on an atom depends only on the local in-plane displacement u, independent of strain gradients, residual buckling, and dynamic electronic reorganization inside the wall. The manuscript offers no direct validation (e.g., finite-field DFT forces on the relaxed wall supercell or BEC values for wall atoms). Because the DW switching mechanism and the superlubric velocities are computed with this map, the central quantitative claim is not yet established.
  2. [§4 (Superlubric motion), Eq. (1) and Fig. 3d-f] Equation (1) is fitted to the same MD velocities it is claimed to describe; with θ fixed to 1 and c_h and c_T as free parameters, the agreement in Fig. 3e-f is a curve fit, not an independent validation. No statistical uncertainties on v are reported, so the deviations in Fig. 3d cannot be assessed. A direct calculation of the wall-energy barrier versus wall position would provide a much stronger test of the near-zero motion-barrier and superlubricity claims.
  3. [§5 (Creep-to-superlubric transition), Fig. 4] The v ∝ 1/h^2 scaling is extracted from MD data for the buckled Σπ/6 wall using the same u-only BEC interpolation, whose validity is least secure precisely in strongly buckled walls. In addition, E3 = 5 V/nm is far into a regime where the linear BEC ansatz F = Z* E may fail due to nonlinear electronic response. The creep-to-superlubric transition needs support from finite-field DFT forces or from BEC calculations at buckled configurations before it can be accepted.
  4. [Computational methods and Data Availability] Key simulation details (system size, boundary conditions, thermostat or NVE integration, trajectory statistics, and how DW velocities are extracted) are not provided in the manuscript, and the data are only available 'upon reasonable request.' The paper repeatedly defers to Supplementary Sections I-IV, which were not part of the text provided for review. Given that the central claims are quantitative and dynamical, the authors should deposit code and input files and report statistical errors.
minor comments (5)
  1. [Abstract and §4] The abstract reports approximately 4000 m/s at room temperature, while the text reports about 3000 m/s at 293 K and E3 = 0.3 V/nm; please reconcile these numbers.
  2. [Abstract] The statement that 'only atoms at the domain walls ... possess non-zero off-diagonal BEC elements' is imprecise; individual atoms in the domains have non-zero off-diagonal BEC tensors, but their C3-symmetric contributions cancel in the unit-cell sum.
  3. [Throughout] Several typographical errors need correction: 'with with' in the Fig. 2 caption, 'sperlubric-like' in the final section, 'We suggests' in the superlubricity discussion, and 'bucking of 38 Å' (presumably 0.38 Å).
  4. [Introduction and §3] The statement that homogeneous switching 'violates Neumann's principle' is conceptually loose; the rigorous statement is that the C3-symmetric initial state has no net first-order in-plane force from E3.
  5. [Fig. 2 and Fig. 3] The axis conventions are confusing: the text says the wall extends along y, while Fig. 3e plots wall position along x; please define the orientation conventions explicitly and state how DW velocity is extracted from the MD trajectories.

Circularity Check

2 steps flagged · score 3.0 of 10

Central DW-switching mechanism is independent, but two fitted expressions are presented as predictive or validating.

  1. fitted input called prediction [Main text, paragraph beginning 'We further map out FIF...', and Supplementary Section III]
    "With these DFT results, we derive a set of analytical functions, Z3j(ux, uy), which accurately predict unit-cell-averaged BEC tensors, (Z∗B,31 + Z∗N,31, Z∗B,32 + Z∗N,32, Z∗B,33 + Z∗N,33), from local sliding displacements."

    These analytical functions are fitted to the same unit-cell-averaged BEC tensors they are said to 'predict.' The subsequent 'local BEC predictions' used to estimate in-plane forces at the DW therefore return the fitted values by construction; the localization of the force at symmetry-broken DW regions is encoded in the fit (zero by symmetry at the C3-symmetric ground states) and is not an independent confirmation. This parameterization does not by itself force the dynamical result, but labeling it a prediction overstates what is an interpolation of DFT data.

  2. fitted input called prediction [Main text, 'Superlubric motion of wave-like domain walls', Eq. (1) and Fig. 3e-f]
    "Assuming that the electrical driving force balances Fk, we establish heuristically the temperature and field dependence of the Σ0 wall’s velocity as v ∝ E p γEθ + cT (kBT )2 , (1) ... Despite the simplicity of the argument, Equation (1) effectively describes velocity data from MD simulations across a wide range of temperatures and out-of-plane fields (Fig. 3e-f) with θ = 1, supporting its physical basis."

    The parameters γ and cT in Eq. (1) are adjusted so that the formula matches the same MD velocity data it is then said to 'describe.' The agreement is therefore a fit, not an independent prediction, and the cooling-promoted trend is partly inserted through the cT(kBT)^2 term. Eq. (1) cannot by itself validate the superlubric interpretation. The inertial-response simulation after field removal is separate, non-circular evidence, so this fitted step does not reduce the central switching mechanism to its inputs.

full rationale

The central claim—that E3-induced in-plane forces appear only where C3 symmetry is broken, so polarization reversal proceeds by coherent propagation of wide, wave-like DWs with near-barrierless superlubric dynamics—is grounded in symmetry arguments and DFT-computed Born effective charges implemented in MD, not in the target result. The control simulation including only Z∗33 shows no DW motion, and the off-diagonal BEC components produce the motion; this internal contrast supports the mechanism. The two flagged fitted expressions (Z3j interpolation and Eq. (1)) are presented with predictive/validating language, but their agreement with the underlying DFT or MD data is by construction. They are peripheral to the existence of DW-driven switching, which is also supported by the inertial motion after field removal and the qualitative reproduction of triangular domains. Self-citations to prior work on perovskite DW width and inertial response [30,39] are comparisons to well-established behavior and are not load-bearing. Thus the paper has some fitted-input language and one fitted 'description' presented as support, but no central circularity; the derivation chain is otherwise self-contained.

Assumptions & free parameters 5 free parameters · 5 assumptions · 0 invented entities

The central claim rests on fitted models (MLFF, Z3j BEC maps, heuristic velocity law) and standard symmetry or electrostatics assumptions. No new physical entities are introduced. The strongest symmetry argument is parameter-light, but the dynamical superlubric predictions inherit substantial fitted content.

free parameters (5)
  • Z3j(u) BEC interpolation coefficients = Coefficients fit to DFT BEC values at sampled displacements
    These coefficients determine the electric-field driving forces in MD; the fit is not independently benchmarked.
  • c_h and c_T in Eq. (1) = Not reported numerically; material-specific fit
    The velocity model v proportional to E / (gamma_E theta + c_T (k_B T)^2) is fit to MD velocity data with theta = 1; the apparent agreement is a fit, not a prediction.
  • Machine-learned force field parameters = Trained to DFT energies and forces
    The entire MD simulation uses this force field; no checkpoint is provided.
  • theta exponent in Eq. (1) = 1
    The paper states theta = 1 'supports its physical basis'; this is a chosen exponent, not derived.
  • v proportional to 1/h^2 scaling exponent = 2
    Power-law exponent extracted from MD data for buckled walls.
assumptions (5)
  • domain assumption Neumann's principle: the response of a crystal to an external field must respect the crystal's point group symmetry.
    Used to rule out net in-plane forces in C3-symmetric single domains, which is the basis for rejecting homogeneous layer sliding.
  • domain assumption The Born effective charge relation Z*_kappa,ij = partial F_kappa,j / partial E_i linearizes the field response; higher-order terms are negligible at E3 = 0.3 V/nm.
    Underpins the calculation of electric-field-induced in-plane forces throughout the paper.
  • domain assumption The machine-learned force field reproduces the DFT potential energy surface of the bilayer, including at domain walls, accurately enough for MD.
    All dynamical results inherit this assumption; no independent verification is provided in the main text.
  • ad hoc to paper Unit-cell-averaged Born effective charges depend only on the local sliding displacement u = (ux, uy).
    Introduced to construct the Z3j(u) model; other degrees of freedom such as buckling and strain are ignored in the field-force map.
  • domain assumption Classical nuclear dynamics in MD are valid at the temperatures studied.
    Nuclear quantum effects are not included, which could matter at the low-temperature limit where the paper predicts anomalous behavior.

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Cite this review

Pith. "Pith review of Superlubric Motion of Wave-like Domain Walls in Sliding Ferroelectrics." pith.science (2026). https://pith.science/paper/K7PNSTY3

@misc{pith2026250201007,
  author       = {Pith},
  title        = {Pith review of: Superlubric Motion of Wave-like Domain Walls in Sliding Ferroelectrics},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/K7PNSTY3}},
  note         = {Machine review of arXiv:2502.01007}
}
abstract

Sliding ferroelectrics constructed from stacked nonpolar monolayers enable out-of-plane polarization in two dimensions with exceptional properties, including ultrafast switching speeds and fatigue-free behavior. However, the widely accepted switching mechanism, which posits synchronized long-distance in-plane translation of entire atomic layers driven by an out-of-plane electric field, has shown inconsistencies with experimental observations. We demonstrate that this spinodal decomposition-like homogeneous switching process violates Neumann's principle and is unlikely to occur due to symmetry constraint. Instead, symmetry-breaking domain walls (DWs) and the tensorial nature of Born effective charges are critical for polarization reversal, underscoring the quantum nature of sliding ferroelectrics. Using the Bernal-stacked $h$-BN bilayer as a model system, we discover that the coherent propagation of wide, wave-like domain walls is the key mechanism for ferroelectric switching. This mechanism fundamentally differs from the layer-by-layer switching associated with narrow domain walls, which has been established for over sixty years in perovskite ferroelectrics. Moreover, these wave-like DWs exhibit superlubric dynamics, achieving ultrahigh velocities of approximately 4000 m/s at room temperature and displaying an anomalous cooling-promoted switching speed. The unexpected emergence of DW superlubricity in sliding ferroelectrics presents new avenues for enhancing key performance metrics and offers exciting opportunities for applications in cryogenic environments.

Figures

Figures reproduced from arXiv: 2502.01007 by the authors.

Figure 1
Figure 1. FIG. 1. Tensorial nature of in-plane forces induced by an out-of-plane electric field in the Bernal [PITH_FULL_IMAGE:figures/full_fig_p013_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. MD simulations of domain walls in sliding ferroelectrics with dynamic Born effective [PITH_FULL_IMAGE:figures/full_fig_p014_2.png] view at source ↗
Figure 3
Figure 3. FIG. 3. Superlubric motion of wave-like domain walls. (a) Evolution of the local energy profile [PITH_FULL_IMAGE:figures/full_fig_p015_3.png] view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: FIG. 4. Creep-to-superlubric transition of DW motions. (a) Temperature dependence of DW [PITH_FULL_IMAGE:figures/full_fig_p016_4.png]

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Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Polarization switching in sliding ferroelectrics: the roles of fluctuation and domain wall

    cond-mat.mtrl-sci 2025-05 conditional novelty 5.0 of 10

    Using density functional theory and molecular dynamics, the authors show that in bilayer h-BN an out-of-plane field drives in-plane interlayer sliding through off-diagonal Born effective charges, so switching is avala...

Reference graph

Works this paper leans on

42 extracted references · 39 canonical work pages · cited by 1 Pith paper

  1. [31]

    R. He, B. Zhang, H. Wang, L. Li, P. Tang, G. Bauer, and Z. Zhong, Ultrafast switching dynamics of the ferroelectric order in stacking-engineered ferroelectrics, Acta Mater. 262, 119416 (2024)

    work page 2024

  2. [1]

    Wu and J

    M. Wu and J. Li, Sliding ferroelectricity in 2D van der waals materials: Related physics and future opportunities, Proc. Natl. Acad. Sci. U.S.A. 118, e2115703118 (2021)

    work page 2021

  3. [2]

    C. Wang, L. You, D. Cobden, and J. Wang, Towards two-dimensional van der waals ferro- electrics, Nat. Mater 22, 542 (2023)

    work page 2023

  4. [3]

    J. Ji, G. Yu, C. Xu, and H. J. Xiang, General theory for bilayer stacking ferroelectricity, Phys. Rev. Lett. 130, 146801 (2023)

    work page 2023

  5. [4]

    Zhang, P

    D. Zhang, P. Schoenherr, P. Sharma, and J. Seidel, Ferroelectric order in van der waals layered 9 materials, Nat. Rev. Mater. 8, 25 (2022)

    work page 2022

  6. [5]

    Vizner Stern, S

    M. Vizner Stern, S. Salleh Atri, and M. Ben Shalom, Sliding van der Waals polytypes, Nat. Rev. Phys. https://doi.org/10.1038/s42254-024-00781-6 (2024)

    work page doi:10.1038/s42254-024-00781-6 2024

  7. [6]

    M. V. Stern, Y. Waschitz, W. Cao, I. Nevo, K. Watanabe, T. Taniguchi, E. Sela, M. Urbakh, O. Hod, and M. B. Shalom, Interfacial ferroelectricity by van der waals sliding, Science 372, 1462 (2021)

    work page 2021

  8. [7]

    Yasuda, X

    K. Yasuda, X. Wang, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero, Stacking-engineered ferroelectricity in bilayer boron nitride, Science 372, 1458 (2021)

    2021

Show all 42 references
  1. [8]

    E. Y. Tsymbal, Two-dimensional ferroelectricity by design, Science 372, 1389 (2021)

    2021

  2. [9]

    X. Wang, K. Yasuda, Y. Zhang, S. Liu, K. Watanabe, T. Taniguchi, J. Hone, L. Fu, and P. Jarillo-Herrero, Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides, Nat. Nanotechnol. 17, 367 (2022)

    2022

  3. [10]

    Weston, E

    A. Weston, E. G. Castanon, V. Enaldiev, F. Ferreira, S. Bhattacharjee, S. Xu, H. Corte-Le´ on, Z. Wu, N. Clark, A. Summerfield, T. Hashimoto, Y. Gao, W. Wang, M. Hamer, H. Read, L. Fumagalli, A. V. Kretinin, S. J. Haigh, O. Kazakova, A. K. Geim, V. I. Fal’ko, and R. Gor- bache...

    2022

  4. [11]

    K. Ko, A. Yuk, R. Engelke, S. Carr, J. Kim, D. Park, H. Heo, H.-M. Kim, S.-G. Kim, H. Kim, T. Taniguchi, K. Watanabe, H. Park, E. Kaxiras, S. M. Yang, P. Kim, and H. Yoo, Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers,...

    2023

  5. [12]

    Zheng, Q

    Z. Zheng, Q. Ma, Z. Bi, S. de la Barrera, M.-H. Liu, N. Mao, Y. Zhang, N. Kiper, K. Watanabe, T. Taniguchi, J. Kong, W. A. Tisdale, R. Ashoori, N. Gedik, L. Fu, S.-Y. Xu, and P. Jarillo- Herrero, Unconventional ferroelectricity in moir´ e heterostructures, Nature588, 71 (2020)

    2020

  6. [13]

    Rog´ ee, L

    L. Rog´ ee, L. Wang, Y. Zhang, S. Cai, P. Wang, M. Chhowalla, W. Ji, and S. P. Lau, Fer- roelectricity in untwisted heterobilayers of transition metal dichalcogenides, Science 376, 973 (2022)

    2022

  7. [14]

    S. Deb, W. Cao, N. Raab, K. Watanabe, T. Taniguchi, M. Goldstein, L. Kronik, M. Urbakh, O. Hod, and M. Ben Shalom, Cumulative polarization in conductive interfacial ferroelectrics, Nature 612, 465 (2022)

    2022

  8. [15]

    Van Winkle, N

    M. Van Winkle, N. Dowlatshahi, N. Khaloo, M. Iyer, I. M. Craig, R. Dhall, T. Taniguchi, 10 K. Watanabe, and D. K. Bediako, Engineering interfacial polarization switching in van der Waals multilayers, Nat. Nanotechnol. 19, 751 (2024)

    2024

  9. [16]

    P. Meng, Y. Wu, R. Bian, E. Pan, B. Dong, X. Zhao, J. Chen, L. Wu, Y. Sun, Q. Fu, Q. Liu, D. Shi, Q. Zhang, Y.-W. Zhang, Z. Liu, and F. Liu, Sliding induced multiple polarization states in two-dimensional ferroelectrics, Nat. Commun. 13, 7696 (2022)

    2022

  10. [17]

    Yasuda, E

    K. Yasuda, E. Zalys-Geller, X. Wang, D. Bennett, S. S. Cheema, K. Watanabe, T. Taniguchi, E. Kaxiras, P. Jarillo-Herrero, and R. Ashoori, Ultrafast high-endurance memory based on sliding ferroelectrics, Science 385, eadp3575 (2024)

    2024

  11. [18]

    R. Bian, R. He, E. Pan, Z. Li, G. Cao, P. Meng, J. Chen, Q. Liu, Z. Zhong, W. Li, and F. Liu, Developing fatigue-resistant ferroelectrics using interlayer sliding switching, Science 385, 57 (2024)

    2024

  12. [19]

    Li and M

    L. Li and M. Wu, Binary compound bilayer and multilayer with vertical polarizations: Two- dimensional ferroelectrics, multiferroics, and nanogenerators, ACS Nano 11, 6382 (2017)

    2017

  13. [20]

    J. Xiao, Y. Wang, H. Wang, C. D. Pemmaraju, S. Wang, P. Muscher, E. J. Sie, C. M. Nyby, T. P. Devereaux, X. Qian, X. Zhang, and A. M. Lindenberg, Berry curvature memory through electrically driven stacking transitions, Nat. Phys. 16, 1028 (2020)

    2020

  14. [21]

    Jindal, A

    A. Jindal, A. Saha, Z. Li, T. Taniguchi, K. Watanabe, J. C. Hone, T. Birol, R. M. Fernandes, C. R. Dean, A. N. Pasupathy, and D. A. Rhodes, Coupled ferroelectricity and superconduc- tivity in bilayer T d-MoTe2, Nature 613, 48 (2023)

    2023

  15. [22]

    Dong, M.-M

    Y. Dong, M.-M. Yang, M. Yoshii, S. Matsuoka, S. Kitamura, T. Hasegawa, N. Ogawa, T. Mo- rimoto, T. Ideue, and Y. Iwasa, Giant bulk piezophotovoltaic effect in 3R-MoS 2, Nat. Nan- otechnol. 18, 36 (2023)

    2023

  16. [23]

    D. Yang, J. Wu, B. T. Zhou, J. Liang, T. Ideue, T. Siu, K. M. Awan, K. Watanabe, T. Taniguchi, Y. Iwasa, M. Franz, and Z. Ye, Spontaneous-polarization-induced photovoltaic effect in rhombohedrally stacked MoS 2, Nat. Photon. 16, 469 (2022)

    2022

  17. [24]

    Huang, G

    B. Huang, G. Clark, D. R. Klein, D. MacNeill, E. Navarro-Moratalla, K. L. Seyler, N. Wilson, M. A. McGuire, D. H. Cobden, D. Xiao, W. Yao, P. Jarillo-Herrero, and X. Xu, Electrical control of 2D magnetism in bilayer CrI 3, Nat. Nanotechnol. 13, 544 (2018)

    2018

  18. [25]

    X. Liu, A. Pyatakov, and W. Ren, Magnetoelectric Coupling in Multiferroic Bilayer VS 2, Phys. Rev. Lett. 125, 247601 (2020)

    2020

  19. [26]

    Zhong, Y

    T. Zhong, Y. Gao, Y. Ren, and M. Wu, Theoretical designs of low-barrier ferroelectricity, 11 WIREs Comput. Mol. Sci. 13, e1682 (2023)

    2023

  20. [27]

    Z. Wang, Z. Gui, and L. Huang, Sliding ferroelectricity in bilayer honeycomb structures: A first-principles study, Phys. Rev. B 107, 035426 (2023)

    2023

  21. [28]

    F. E. Neumann, Vorlesungen ¨ uber die Theorie der Elastizit¨ at der festen K¨ orper und des Licht¨ athers, edited by O. E. M. Leipzig and B. G. Teubner-Verlag (1885)

  22. [29]

    Binder, Theory of first-order phase transitions, Rep

    K. Binder, Theory of first-order phase transitions, Rep. Prog. Phys. 50, 783 (1987)

    1987

  23. [30]

    S. Liu, I. Grinberg, and A. M. Rappe, Intrinsic ferroelectric switching from first principles, Nature 534, 360 (2016)

    2016

  24. [32]

    coherent propagation

    are critical for generating in-plane atomic forces. However, the presence of C 3 symmetry cancels these in-plane forces in both AB and BA configurations. For each unit cell, the net in-plane force can be approximated as FIP = (Z ∗ B,31 + Z ∗ N,31, Z∗ B,32 + Z ∗ N,32) · E3. Usi...

  25. [33]

    R. C. Miller and G. Weinreich, Mechanism for the sidewise motion of 180 ◦ domain walls in barium titanate, Phys. Rev. 117, 1460 (1960)

    1960

  26. [34]

    J. Wang, A. Khosravi, A. Vanossi, and E. Tosatti, Colloquium: Sliding and pinning in struc- turally lubric 2D material interfaces, Rev. Mod. Phys. 96, 011002 (2024)

    2024

  27. [35]

    J. Wang, M. Ma, and E. Tosatti, Kinetic friction of structurally superlubric 2D material interfaces, J. Mech. Phys. Solids 180, 105396 (2023)

    2023

  28. [36]

    Guerra, U

    R. Guerra, U. Tartaglino, A. Vanossi, and E. Tosatti, Ballistic nanofriction, Nat. Mater. 9, 634 (2010)

    2010

  29. [37]

    J. Jo, S. Yang, T. Kim, H. Lee, J.-G. Yoon, S. Park, Y. Jo, M. Jung, and T. W. Noh, Nonlinear dynamics of domain-wall propagation in epitaxial ferroelectric thin film, Phys. Rev. Lett. 102, 045701 (2009)

    2009

  30. [38]

    Tybell, P

    T. Tybell, P. Paruch, T. Giamarchi, and J.-M. Triscone, Domain wall creep in epitaxial fer- roelectric Pb(Zr 0.2Ti0.8)O3 thin films, Phys. Rev. Lett. 89, 097601 (2002)

    2002

  31. [39]

    L. Bai, C. Ke, Z. Luo, T. Zhu, L. You, and S. Liu, Intrinsic ferroelectric switching in two- dimensional α-In2Se3, ACS Nano 18, 26103 (2024)

    2024

  32. [40]

    S. Liu, I. Grinberg, and A. M. Rappe, Exploration of the intrinsic inertial response of fer- roelectric domain walls via molecular dynamics simulations, Appl. Phys. Lett. 103, 232907 (2013)

    2013

  33. [41]

    Caretta, S.-H

    L. Caretta, S.-H. Oh, T. Fakhrul, D.-K. Lee, B. H. Lee, S. K. Kim, C. A. Ross, K.-J. Lee, and G. S. D. Beach, Relativistic kinematics of a magnetic soliton, Science 370, 1438 (2020). 12 - 1.5- 1.0- 0.50 .00 .51 .01 .5-1.5- 1.0- 0.50 .00 .51 .01 .5uy (Å)u x (Å)× 10- 4 eV/Å0.00....

    2020

  34. [42]

    At 15 ps, applying a downward field of −0.3 V/nm reverses the switching process as expected

    correctly predict E3-driven DW motions. At 15 ps, applying a downward field of −0.3 V/nm reverses the switching process as expected. At 25 ps, the system has transitioned to a single-domain state and becomes unswitchable under E3 = −0.3 V/nm. (g) Pattern evolution of triangula...

Pith tools

Reviewed August 9, 2026 · model on record in the stance chip above.