Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

2; (2) TDK Co.; 3); (3) Osaka Univ); Hayato Koike (2); Kazuhito Tanaka (3); Makoto Kameno (1; Masashi Shiraishi (1) ((1) Kyoto Univ.; Shinji Miwa (3); Takayuki Tahara (1)

arxiv: 1510.06524 · v1 · pith:KIKA6OKTnew · submitted 2015-10-22 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

Takayuki Tahara (1) , Hayato Koike (2) , Makoto Kameno (1 , 2 , 3) , Yuichiro Ando (1) , Kazuhito Tanaka (3) , Shinji Miwa (3)

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Yoshishige Suzuki (3) Masashi Shiraishi (1) ((1) Kyoto Univ. (2) TDK Co. (3) Osaka Univ)

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classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci

keywords spinmosfethighoperationratioachievementallowsapplication

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We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way to practical use of the Si spin MOSFET.

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Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio

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