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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
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We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The $q^{-3}$ decay typical for random dislocations is observed in double-crystal rocking curves. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained.
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Cited by 1 Pith paper
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Reversible Modulation of Thermal Conductivity in GaN via Strain-Driven Reorganization of Dislocation Ensembles
Elastic strain reversibly reorganizes threading dislocations in GaN, enhancing thermal conductivity by 23% at 0.21% strain via reduced phonon scattering from changed dislocation correlations.
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