Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge_(1.01)Te: Experimental investigation and theoretical insight

This study shows a method of enhancing the thermoelectric properties of GeTe-based materials by Ti and Bi co-doping on cation sites along with self-doping with Ge via simultaneous optimization of electronic (via crystal field engineering, and precise Fermi level optimization) and thermal (via point-defect scattering) transport properties. The pristine GeTe possesses high carrier concentration ($n$) due to intrinsic Ge vacancies, low Seebeck coefficient ($\alpha$), and high thermal conductivity ($\kappa$). The Ge vacancy optimization and crystal field engineering results in an enhanced $\alpha$ via excess Ge and Ti doping, which is further improved by band structure engineering through Bi doping. As a result of improved $\alpha$ and optimized Fermi level (carrier concentration), an enhanced power factor ($\alpha^2\sigma$) is obtained for Ti--Bi co-doped Ge$_{1.01}$Te. These experimental results are also evidenced by theoretical calculations of band structure, and thermoelectric parameters using density functional theory and Boltztrap calculations, respectively. A significant reduction in the phonon thermal conductivity ($\kappa_{ph}$) from $\sim$ 3.5 W.m$^{-1}$.K$^{-1}$ to $\sim$ 1.06 W.m$^{-1}$.K$^{-1}$ at 300\,K for Ti--Bi co-doping in GeTe, attributed to point-defect scattering due to mass and strain field fluctuation, in line with the Debye-Callaway model. The phonon dispersion calculations show a decreasing group velocity in Ti--Bi co-doped GeTe, supporting the obtained reduced $\kappa_{ph}$. The strategies used in the present study can significantly increase the effective mass, optimize the carrier concentration, and decrease phonon thermal conductivity while achieving an impressive maximum zT value of 1.75 at 773\,K and average zT (zT$_{av}$) of 1.03 for Ge$_{0.91}$Ti$_{0.02}$Bi$_{0.08}$Te over a temperature range of 300-773\,K.