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Excess dissipation in a single-electron box: The Sisyphus resistance

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arxiv 0902.4316 v2 pith:LYDA55W4 submitted 2009-02-25 cond-mat.supr-con cond-mat.other

F. Persson , C.M. Wilson , M. Sandberg , G. Johansson , P. Delsing This is my paper · ORCID
classification cond-mat.supr-concond-mat.other
keywords resistancesisyphusdissipationsingle-electronapplicationsapplycallcircuit
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We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

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