Magnetic Proximity Effect in a van der Waals Moir\'e Superlattice

Mingxing Chen; Qingjun Tong; Wang Yao

REVIEW 3 major objections 5 minor 52 references

Magnetic Proximity Effect in a van der Waals Moir\'e Superlattice

T0 review · 3 major / 5 minor · reviewed 2026-08-14 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Atomic registry sets the magnetic proximity effect in moiré bilayers.

desk verdict Solid registry-dependent magnetic proximity effect with a credible DFT anchor, but the moiré miniband predictions rest on a rigid-lattice approximation the paper doesn't quantitatively test. read the letter →

arxiv 1908.06740 v1 pith:MO46EOGC submitted 2019-08-19 cond-mat.mtrl-sci cond-mat.mes-hall

Qingjun Tong , Mingxing Chen , Wang Yao This is my paper · ORCID

classification cond-mat.mtrl-scicond-mat.mes-hall

keywords magneticproximityeffectmoirésuperlatticevanderWaalsheterostructurespinsplittinginterlayeratomicregistryminibandCrI3BAs

verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper tries to establish that the magnetic proximity effect at a van der Waals interface is not uniform: it depends sensitively on how the two atomic lattices are aligned, the interlayer atomic registry. In a moiré pattern the registry changes continuously from place to place, so the paper claims the magnetic proximity field is laterally modulated and appears as a spin splitting of moiré minibands. Because the moiré periodicity can be changed by relative twist or strain, and because the interlayer distance also varies across the moiré, the miniband spin splitting becomes mechanically and electrically tunable. A sympathetic reader would care because this turns moiré heterostructures into a platform for spin-polarized quantum dot arrays, spin filters, and spin memories with gate-level control.

What carries the argument

The machinery is the local-approximation map from a moiré location $\mathbf{R}$ to a local interlayer translation vector $\mathbf{r}(\mathbf{R})$, treating each small region as a rigid, commensurate bilayer. With this mapping, the registry-dependent spin splitting $E_s(\mathbf{r})$ and the spin-dependent band-edge energy $V_\tau(\mathbf{r})$, both expressed as sums over the first-shell reciprocal lattice vectors, become moiré potentials in the tight-binding Hamiltonian $H = H_0 + V_\tau(\mathbf{R})$. These two registry-dependent functions carry the entire argument: the miniband spin splitting, the exponential flattening of the miniband with moiré periodicity, and the electric-field response all follow from them.

What would settle it

Resolve the valence-band spin splitting of BAs in a BAs/CrI3 moiré as a function of position or moiré periodicity, using spin-resolved scanning tunneling microscopy or angle-resolved photoemission on samples with controlled twist and strain, and compare with the paper's prediction that the splitting goes from near zero in A-type regions to about 12.7 meV in H-type regions and grows with moiré periodicity. Observing sizeable splitting in A-type regions, or no growth of the miniband splitting with periodicity, would falsify the registry-modulation picture.

Watch

Extended reading notes

Core claim

The central claim is that in a van der Waals bilayer made of a monolayer semiconductor (BAs) on a two-dimensional ferromagnet (CrI3), the magnetic proximity effect arises from spin-conserved interlayer hopping and depends strongly on the interlayer atomic registry. First-principles calculations show that the registry-dependent spin splitting at the BAs valence band edge ranges from essentially zero to about 12.7 meV between high-symmetry stackings, and the paper captures this with a compact registry-dependent formula $E_s(\mathbf{r})$. In a long-period moiré, where the registry varies smoothly from place to place, the proximity field is therefore spatially modulated, producing a spin-dependent moiré potential and minibands whose spin splitting grows as the moiré periodicity increases and approaches the value of the local high-symmetry configuration. A perpendicular electric field, acting through the moiré modulation of interlayer distance, shifts the confinement centers and can even spatially separate the spin-up and spin-down carriers in the moiré.

Load-bearing premise

The results stand or fall on the local approximation: the moiré is treated as two rigid, unreconstructed lattices where each location maps linearly to a local interlayer translation, so the registry-dependent physics of commensurate bilayers transfers directly to the moiré.

Editorial extensions

If this is right

In a long-period BAs/CrI3 moiré, the topmost valence miniband becomes flat and spin-split, with the splitting approaching about 12.7 meV as the band-edge state localizes around the H stacking region.
The miniband spin splitting can be tuned mechanically by relative twist and/or strain, because those control the moiré periodicity.
A perpendicular electric field monotonically reduces the miniband spin splitting by moving the confinement center from H to A registries, and at a specific field strength it spatially separates spin-up and spin-down carriers at different moiré locations.
The spin-polarized and well-localized miniband states form a hexagonal array of quantum dots that a uniaxial strain can turn into a one-dimensional array of spin waveguides.
Because the proximity-induced spin polarization follows the CrI3 magnetization, switching that magnetization with a small external field reverses the spin polarization of the miniband states.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

Editorial inference: the same registry-dependent proximity mechanism should operate in other semiconductor/ferromagnet van der Waals pairs, though the quantitative splittings will depend on band alignment and interlayer hopping amplitudes, so the BAs/CrI3 numbers are a case study rather than a universal scale.
Editorial inference: if atomic reconstruction occurs in the moiré, the linear registry map used here would break down and the confinement centers and spin-splitting values would shift, so full-scale atomistic calculations including relaxation would test how robust the predicted miniband spin splitting is.
Editorial inference: the predicted electric-field-induced spin separation suggests a concrete experimental search using spin-resolved scanning tunneling microscopy or magneto-optical Kerr measurements, which should show spin-up and spin-down densities moving to opposite moiré regions as the gate voltage is swept.

Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Desk Editor's Note

read the letter

Quick take: this is a good applied theory paper, not a revolution. The genuinely new piece is showing that the magnetic proximity effect in BAs/CrI3 depends strongly on stacking registry (0 to ~13 meV across A/B/H), and that a moiré pattern therefore produces a spatially modulated proximity field that shows up as spin-split minibands. That combination is new and useful.

What it does well: the symmetry analysis for C3-symmetric stackings is clean and matches the DFT. The interpolation formula for Es(r) is checked against first-principles data along one line and works, which is real evidence. The paper is also unusually honest: it explicitly flags the rigid-lattice local approximation, the neglect of reconstruction, the role of SOC, and the vdW functional sensitivity. That honesty earns credit.

Where the soft spots are: the main one is exactly what the stress test says. The miniband spin splitting versus moiré periodicity (Fig. 5c) and the electric-field competition (Fig. 6) all go through the mapping r(R) that assumes no in-plane reconstruction. The paper concedes relaxation would change the quantitative profiles, then asserts the general picture survives without testing it. For a prediction with this much device flavor, that assertion is a gap. The interpolation also inherits some circularity: the moiré potential parameters are fitted at the same high-symmetry configurations whose spin splittings the long-period limit recovers, so Fig. 5c asymptotics are partly baked in. The electric-field part relies on a fitted interlayer-distance modulation and an assumed form; plausible, but softer. No data/code is provided for reproduction, though the model is simple enough that it's likely reproducible.

Bottom line: the central registry-dependence claim is well supported, and the moiré extension is a reasonable and clearly stated model, not a falsifiable first-principles supercell calculation. The paper deserves serious peer review. I'd send it out. The referee should ask for a sensitivity test of the rigid-lattice assumption (e.g., reconstructed r(R) from a continuum model) before the quantitative claims are taken at face value.

Referee Report

3 major / 5 minor

Summary. The manuscript studies the magnetic proximity effect (MPE) in a van der Waals heterobilayer formed by a monolayer of the semiconductor BAs and a monolayer of the ferromagnet CrI3, with a focus on moiré superlattices. From DFT calculations of commensurate BAs/CrI3 bilayers and symmetry analysis, the authors show that the spin splitting induced in the BAs valence band depends strongly on the interlayer atomic registry: about 12.7 meV for H stacking, 2.6 meV for B stacking, and negligible for A stacking. They parameterize this registry dependence with the interpolation formula Eq. (1), validate it along one line in registry space, and similarly parameterize the registry-dependent band-edge energy as a moiré potential in Eq. (2). Under a rigid-lattice local approximation, these potentials are mapped to a moiré superlattice, giving spin-polarized minibands whose width and spin splitting depend on the moiré period, and an electric-field-tunable spin splitting that can lead to spatial separation of spin-up and spin-down states. The paper closes with proposed device concepts such as spin-polarized quantum dot arrays and one-dimensional spin waveguides.

Significance. If the results hold, the paper identifies a general and physically transparent mechanism: the magnetic proximity field in a vdW heterostructure is registry dependent, so a moiré pattern automatically produces a lateral modulation of that field, with observable consequences in miniband spin splitting. The central registry dependence is supported by independent evidence: C3 symmetry selection rules for interlayer hopping and direct DFT at the A, B, and H stackings. The interpolation Eq. (1) is checked against first-principles data along a line, and the moiré model is clearly stated. The electric-field-induced spin separation prediction is falsifiable and would be a distinctive experimental signature. The main uncertainties are the reliance on PBE-level DFT without error bars, the use of potentials fitted to the same high-symmetry configurations used to establish the effect, and the untested robustness of the miniband predictions to in-plane reconstruction.

major comments (3)

[IV.A] The entire miniband calculation rests on the rigid-lattice local approximation, where the mapping between local registry r and position R is assumed linear. The text explicitly concedes that in-plane relaxation "would change quantatively the profiles of spin splitting and band edge energy" but then asserts without calculation that "the general picture ... is not changed." This is load-bearing for the central quantitative claims: Fig. 5(c) presents the miniband spin splitting as a function of moiré periodicity, and Fig. 6(b) presents the electric-field competition, both of which would be renormalized if the registry mapping were not rigid. I request a quantitative assessment of the validity of the no-reconstruction assumption, for example an estimate of the adhesion energy versus the elastic energy cost for the relevant moiré periods, or a DFT relaxation of at least one large-period moiré supercell. In the absence of such evidence, the claims should be explicitly restricted to the rigid-lattice limit.
[Eq. (1) and Fig. 3(b)] The interpolation formula Eq. (1) is the first-principles-anchored expression for the registry dependence of the spin splitting, but it is validated only along a single line in the two-dimensional registry unit cell. Because the later moiré model uses the full two-dimensional behavior of the registry-dependent quantities, the authors should provide a more complete quantitative comparison, such as a color-map of the difference between Eq. (1) and DFT over the whole unit cell, or at least report a root-mean-square deviation along several high-symmetry paths. This would also address the concern that the two fitted amplitudes Es_H and Es_B already guarantee agreement at the three special points.
[Appendix A and Appendix C] The quantitative values Es_H = 12.7 meV and Es_B = 2.6 meV are obtained from GGA-PBE DFT without a Hubbard U correction, even though monolayer CrI3 is a correlated magnetic insulator. The vdW-functional comparison in Appendix C checks the interlayer functional but does not test the dependence of the spin splitting on the exchange-correlation treatment of the Cr 3d states. A DFT+U or hybrid-functional calculation for at least the H and B stackings would give an indication of the error bar on the miniband spin splittings, which currently inherit the PBE values without any stated uncertainty.

minor comments (5)

[Section V] The heading "Discussion and summery" contains a typo; it should read "Summary."
[Section IV.A] The paragraph describing the local approximation contains the typo "quantatively" instead of "quantitatively."
[Section II] The statement that the translation vector r is well defined only in the 1x1 unit cell of BAs is somewhat confusing, since the commensurate supercell is a 2x2 supercell of BAs on a 1x1 cell of CrI3; please clarify the definition of the reference unit cell used for r.
[Eq. (2)] The parameters {vτ, φτ} are given as approximately {83 meV, 152.3°} and {70 meV, 156°}, but no explicit uncertainty or fitting error is reported; please add the fitting residuals or a statement of the expected accuracy.
[Fig. 5] In the band-structure panels, the reciprocal-space labels K̃, Γ̃, and M̃ are used but not explicitly defined in the text; a brief definition of the mini-Brillouin-zone notation would improve readability.

Circularity Check

0 steps flagged · score 2.0 of 10

No significant circularity: the registry-dependent proximity effect is supported by independent DFT checks, and the moiré miniband limits are transparent model consequences rather than disguised input fits.

full rationale

The paper's central registry-dependence claim is not circular: Section III.A derives C3 selection rules, and Figs. 2-3 give direct first-principles splittings at the A, B, and H stackings, plus an intermediate-registry comparison ('We also compared the above approximate result with first-principles result, which shows a good agreement'), so the registry dependence is not merely assumed. Equation (2) is openly a fit: 'The parameters {vτ, φτ} ≈ {83meV, 152.3°} ... can be fitted from first-principles results at high-symmetry configurations.' The moiré potential is then the same fitted function mapped onto R, and Fig. 5(c) explicitly notes that 'the spin splitting value in the miniband will gradually approach to the value at this configuration (Es_H)'; this asymptotic recovery of a fitted input is a consistency property of the localization model, not an independent prediction. The periodicity dependence and electric-field competition are computed from the tight-binding Hamiltonian with separately fitted monolayer BAs parameters (Appendix B) and the explicit Stark parameterization V_ext(r)=v0 Σ cos(G_i·r+φ_d), so they are not identical to the inputs by construction. The rigid-lattice linear mapping is stated as an assumption ('We assume that the moiré is formed between two rigid lattices (i.e. no reconstruction)'), and the paper discloses that relaxation 'would change quantatively the profiles of spin splitting and band edge energy'; this is a correctness/robustness limitation, not a circular step. Equation (1) is attributed to [27] and the mapping to [26,27,32], all involving the present authors, but the C3 analysis in Section III.A and the non-fitted intermediate DFT points give independent support, with [45] providing an external basis for the local approximation. Overall, no load-bearing claim reduces to its own input by definition; the score reflects only these minor, non-load-bearing self-citations.

Assumptions & free parameters 6 free parameters · 5 assumptions · 0 invented entities

The central model is a parametrized interpolation of first-principles data: the registry-dependent spin splitting and moire potential amplitudes are fitted at high-symmetry configurations, then used to compute moire minibands. The symmetry structure of Eq. (1) is derived, but the amplitudes and phases are extracted from DFT. No new physical entities are introduced.

free parameters (6)

Es_H (spin splitting at H stacking) = 12.7 meV
Fitted from DFT band structure at the H configuration; used as amplitude in Eq. (1) and sets large-period miniband splitting in Fig. 5(c).
Es_B (spin splitting at B stacking) = 2.6 meV
Fitted from DFT at the B configuration; second amplitude in Eq. (1).
v_up, phi_up (spin-up moire potential parameters) = 83 meV, 152.3 degrees
Fitted from first-principles band-edge energies at high-symmetry configurations for Eq. (2); used for all miniband calculations.
v_down, phi_down (spin-down moire potential parameters) = 70 meV, 156 degrees
Fitted from DFT for the spin-down channel in Eq. (2).
d0, phi_d (interlayer distance modulation parameters) = 0.12 Angstrom, 167 degrees
Fitted from relaxed DFT interlayer distances (Fig. 6(a)); used in the electric-field Stark shift model.
Tight-binding parameters for BAs (epsilon_A, epsilon_B, t) = epsilon_A = -epsilon_B = 0.38 eV, t = 1.43 eV
Fitted to DFT band structure of monolayer BAs (Fig. 8); used for moire miniband Hamiltonian.

assumptions (5)

standard math Bloch states at K point transform under C3 with known eigenvalues
Used in Section III.A to derive which interlayer hoppings are symmetry-allowed.
domain assumption Second-order perturbation theory for spin splitting Es ~ sum (1/Ei - 1/(Ei+Di)) ti^2
Assumes small interlayer hopping and that spin-conserved processes dominate over SOC; Appendix C discusses SOC corrections.
ad hoc to paper Only three CrI3 bands (c, c1, c2) contribute significantly to the proximity effect
Used to truncate the sum in Eq. (1); acknowledged in Appendix C to fail when interlayer distance is substantially reduced.
domain assumption Type-II band alignment with BAs valence band below CrI3 conduction band by about 450 meV
Basis for focusing on the valence band edge of BAs; from DFT band alignment in Fig. 1(c).
domain assumption Rigid linear mapping between local registry r and moire position R, no reconstruction
Assumed in Section IV.A to construct the moire potential from commensurate results.

how reviews work

0 comments

Cite this review

Pith. "Pith review of Magnetic Proximity Effect in a van der Waals Moir\'e Superlattice." pith.science (2026). https://pith.science/paper/MO46EOGC

@misc{pith2026190806740,
  author       = {Pith},
  title        = {Pith review of: Magnetic Proximity Effect in a van der Waals Moir\'e Superlattice},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/MO46EOGC}},
  note         = {Machine review of arXiv:1908.06740}
}

read the original abstract

We investigate the magnetic proximity effect in van der Waals heterostructure formed by a monolayer semiconductor stacked on a 2D ferromagnet, where the lattice mismatch and twisting between the layers typically lead to the formation of moir\'e pattern. We find that the magnetic proximity effect arising from the spin dependent interlayer coupling depends sensitively on the interlayer atomic registry. Consequently, in the moir\'e pattern, the spatial variation of the atomic registry leads to a lateral modulation of magnetic proximity field. Such moir\'e modulated magnetic proximity effect manifests as a miniband spin splitting that strongly depends on the moir\'e periodicity which can be mechanically tuned by a relative twisting and/or strain between the layers. We also show, because of the moir\'e modulation on the interlayer distance, a perpendicular electric field can be used to control the miniband spin splitting. Our results suggest potential nanodevices where the moir\'e modulated magnetic proximity effect can lead to unique spin controllability.

Figures

Figures reproduced from arXiv: 1908.06740 by the authors.

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

52 extracted references · 43 canonical work pages

[1]

C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y . Xia, T. Cao, W. Bao, C. Wang, Y . Wang, Z. Q. Qiu, R. J. Cava, S. G. Louie, J. Xia, and X. Zhang, Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals, Nature 546, 265 (2017)

work page 2017
[2]

Huang, G

B. Huang, G. Clark, E. Navarro -Moratalla, D. R. Klein, R. Cheng, K. L. Seyler, D. Zhong, E. Schmidgall, M. A. McGuire, D. H. Cobden, W. Yao, D. Xiao, P. Jarillo-Herrero, and X. Xu, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit, Nature 546, 270 (2017)

work page 2017
[3]

K. S. Burch, D. Mandrus, and J.-G. Park, Magnetism in two-dimensional van der Waals materials, Nature 563, 47 (2018)

2018
[4]

Sivadas, S

N. Sivadas, S. Okamoto, and D . Xiao, Gate-Controllable Magneto-optic Kerr Effect in Layered Collinear Antiferromagnets, Phys. Rev. Lett. 117, 267203 (2016)

work page 2016
[5]

Jiang, J

S. Jiang, J. Shan, and K. F. Mak, Electric-field switching of two -dimensional van der Waals magnets, Nat. Mater. 17, 406 (2018)

work page 2018
[6]

Huang, G

B. Huang, G. Clark, D. R. Klein, D. MacNeill, E. Navarro -Moratalla, K. L. Seyler, N. Wilson, M. A. McGuire, D. H. Cobden, D. X iao, W. Yao, P. Jarillo-Herrero, and X. Xu, Electrical control of 2D magnetism in bilayer CrI3, Nat. Nanotech. 13, 544 (2018)

work page 2018
[7]

Z. Wang, T. Zhang, M. Ding, B. Dong, Y. Li, M. Chen, X. Li, J. Huang, H. Wang, X. Zhao, Y. Li, D. Li, C. Jia, L. Sun, H. Guo, Y. Ye, D. Sun, Y. Chen, T. Yang, J. Zhang, S. Ono, Z. Han, and Z. Zhang, Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor, Nat. Nanotech. 13, 554 (2018)

work page 2018
[8]

Y. Deng, Y. Yu, Y. Song, J. Zhang, N. Z. Wang, Y. Z. Wu, J. Zhu, J. Wang, X. H. Chen, and Y . Zhang, Gate-tunable Room -temperature Ferromagnetism in Two -dimensional Fe3GeTe2, Nature 563, 94 (2018)

work page 2018

Show all 52 references

[9]

T. Song, X. Cai, M. W.-Y . Tu, X. Zhang, B. Huang, N. P. Wilson, K. L. Seyler, L. Zhu, T. Taniguchi, K. Watanabe, M. A. McGuire, D. H. Cobden, D. Xiao, W. Yao, and X. Xu, Giant tunneling magnetoresistance in spin -filter van der Waals heterostructures , Science 360, 1214 (2018)

2018
[10]

D. R. Klein, D. MacNeill, J. L. Lado, D. Soriano, E. Navarro -Moratalla, K. Watanabe, T. Taniguchi, S. Manni, P. Canfield, J. Fernández-Rossier, and P. Jarillo -Herrero, Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling, Science 360, 1218 (2018)

2018
[11]

Z. Wang, I . Gutiérrez-Lezama, N . Ubrig, M . Kroner, M . Gibertini, T. Taniguchi, K . Watanabe, A . Imamoğlu, E . Giannini, and A . F. Morpurgo , V ery large tunneling magnetoresistance in lay ered magnetic semiconductor CrI 3, Nat. Commun. 9, 2516 (2018)

2018
[12]

Ghazaryan, M

D. Ghazaryan, M. T. Greenaway, Z. Wang, V. H. Guarochico-Moreira, I. J. V era-Marun, J. Yin, Y . Liao, S. V . Morozov, O. Kristanovski, A. I. Lichtenstein, M. I. Katsnelson, F. Withers, A. Mishchenko, L. Eaves, A. K. Geim, K. S. Novoselov, and A. Misra, Magnon-assisted tunnell...

2018
[13]

H. H. Kim, B. Yang, T. Patel, F. Sfigakis, C. Li, S. Tian, H. Lei, and A. W. Tsen, One million percent tunnel magnetoresistance in a magneti c van der Waals heterostructure , Nano Lett. 18, 4885 (2018)

2018
[14]

T. Song, M. W.-Y . Tu, C. Carnahan, X. Cai, T. Taniguchi, K. Watanabe, M. McGuire, D. Cobden, D. Xiao, W. Yao, and X. Xu, V oltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction, Nano Lett. 19, 915 (2019)

2019
[15]

A. K. Geim and I. V. Grigorieva, Van der Waals heterostructures, Nature 499, 419 (2013)

2013
[16]

L. A. Ponomarenko, R. V . Gorbachev, G. L. Yu, D. C. Elias, R. Jalil, A. A. Patel, A. Mishchenko, A. S. Mayorov, C. R. Woods, J. R. Wallbank, M. Mucha-Kruczynski, B. A. Piot, M. Potemski, I. Grigorieva, K. S. Novoselov, F. Guinea, V . I. Falko, and A. K. Geim, Cloning of Dirac...

2013
[17]

C. R. Dean, L. Wang, P. Maher, C. Forsythe, F. Ghahari, Y . Gao, J. Katoch, M. Ishigami, P. Moon, M. Koshino, T. Taniguchi, K. Watanabe, K. L. Shepard, J. Hone, an d P. Kim, Hofstadter's butterfly and the fractal quantum Hall e ffect in moiré superlattices , Nature 497, 598 (2013)

2013
[18]

B. Hunt, J. D. Sanchez -Yamagishi, A. F. Young, M. Yankowitz, B. J. LeRoy, K. Watanabe, T. Taniguchi, P. Moon, M. Koshino, P. Jarillo -Herrero, and R. C. Ashoori, Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure, Science 340, 1427 (2013)

2013
[19]

R. V. Gorbachev, J. C. W. Song, G. L. Yu, A. V . Kretinin, F. Withers, Y . Cao, A. Mishchenko, I. V . Grigorieva, K. S. Novoselov, L. S. Levitov, and A. K. Geim, Detecting topological currents in graphene superlattices, Science 346, 448 (2014)

2014
[20]

Zhang, C

C. Zhang, C. -P. Chuu, X. Ren, M. -Y . Li, L.-J. Li, C. Jin, M. -Y . Chou, and C.-K. Shih, Interlayer couplings, moiré patterns, and 2D electronic superlattic es in MoS 2/WSe2 hetero-bilayers, Sci. Adv. 3, e1601459 (2017)

2017
[21]

Sivadas, S

N. Sivadas, S. Okamoto, X. Xu, C. J. Fennie , and D . Xiao, Stacking-Dependent Magnetism in Bilayer CrI3, Nano Lett. 18, 7658 (2018)

2018
[22]

D. R. Klein, D . MacNeill, Q. Song, D. T. Larson, S. Fang, M. Xu, R. A. Ribeiro, P. C. Canfield, E. Kaxiras, R. Comin, and P. Jarillo-Herrero, Giant enhancement of interlayer exchange in an ultrathin 2D magnet, arXiv:1903.00002 (2019)

2019 arXiv
[23]

Z. Sun, Y. Yi, T. Song, G. Clark, B. Huang, Y. Shan, S. Wu, D. Huang, C. Gao, Z. Chen, M. McGuire, T . Cao, D . Xiao, W .-T. Liu, W . Yao, X . Xu, and S. Wu, Giant and nonreciprocal second harmonic generation from layered antiferromagnetism in bilayer CrI3, arXiv:1904.03577 (2019)

2019 arXiv
[24]

J. C. W. Song, P. Samutpraphoot, and L. S. Levitov, Topological Bloch bands in graphene superlattices, Proc. Natl Acad. Sci. USA 112, 10879 (2015)

2015
[25]

F. Wu, T. Lovorn, and A. H. MacDonald, Topological exciton bands in Moiré heterojunctions, Phys. Rev. Lett. 118, 147401 (2017)

2017
[26]

Q. Tong, H. Yu, Q. Zhu, Y . Wang, X. Xu, and W. Yao, Topological mosaics in moiré superlattices of van der Waals heterobilayers, Nat. Phys. 13, 356 (2017)

2017
[27]

Yu, G.-B

H. Yu, G.-B. Liu, J. Tang, X. Xu, and W. Yao, Moiré excitons: From programmable quantum emitter arrays to spin -orbit-coupled artificial lattices , Sci. Adv. 3, e1701696 (2017)

2017
[28]

F. Wu, T. Lovorn, and A. H. MacDonald, Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers , Phys. Rev. B 97, 035306 (2018)

2018
[29]

K. L. Seyler, P. Rivera, H. Yu , N. P. Wilson, E. L. Ray, D. G. Mandrus, J. Yan, W. Yao, and X. Xu, Signatures of moiré-trapped valley excitons in MoSe 2/WSe2 heterobilayers, Nature 567, 66 (2019)

2019
[30]

K. Tran, G. Moody, F. Wu, X. Lu, J. Choi, K. Kim, A. Rai, D. A. Sanchez, J. Quan, A. Singh, J. Embley, A. Zepeda, M. Campbell, T. Autry, T. Taniguchi, K. Watanabe, N. Lu, S. K. Banerjee, K. L. Silverman, S. Kim, E. Tutuc, L. Yang, A. H. MacDonald, and X. Li, Evidence for moiré...

2019
[31]

C. Jin, E . C. Regan, A . Yan, M. I . B. Utama, D. Wang, S. Zhao, Y. Qin, S . Yang, Z. Zheng, S. Shi, K. Watanabe, T. Taniguchi, S. Tongay, A. Zettl, and F. Wang, Observation of moiré excitons in WSe2/WS2 heterostructure superlattices, Nature 567, 76 (2019)

2019
[32]

Q. Tong, F. Liu, J. Xiao, and W. Yao, Skyrmions in the Moiré of van der Waals 2D Magnets, Nano Lett. 18, 7194 (2018)

2018
[33]

Z. Qiao, W. Ren, H. Chen, L. Bellaiche, Z. Zhang, A. H. MacDonald, and Q. Niu, Quantum anomalous Hall effect in graphene proximity coupled to an antiferromagnetic insulator, Phys. Rev. Lett. 112, 116404 (2014)

2014
[34]

J. Qi, X. Li, Q. Niu, and J. Feng, Giant and tunable valley degeneracy splitting in MoTe2, Phys. Rev. B 92, 121403(R) (2015)

2015
[35]

C. Zhao, T. Norden, P. Zhang, P. Zhao, Y. Cheng, F. Sun, J. P. Parry, P. Taheri, J. Wang, Y. Yang, T. Scrace, K. Kang, S. Yang, G.-X. Miao, R. Sabirianov, G. Kioseoglou, W. Huang, A. Petrou, and H. Zeng, Enhanced valley splitting in monolayer WSe 2 due to magnetic exchange fie...

2017
[36]

Scharf, G

B. Scharf, G. Xu, A. Matos-Abiague, and I. Žutić, Magnetic proximity effects in transition-metal dichalcogenides: converting excitons , Phys. Rev. Lett. 119, 127403 (2017)

2017
[37]

Zhong, K

D. Zhong, K. L. Seyler, X. Linpeng, R. Cheng, N. Sivadas, B. Huang, E. Schmidgall, T. Taniguchi, K. Watanabe, M. A. McGuire, W. Yao, D. Xiao, K.-M. C. Fu, and X. Xu, Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics, Sci. Adv....

2017
[38]

K. L. Seyler, D. Zhong, B. Huang, X. Linpeng, N. P. Wilson, T. Taniguchi, K. Watanabe, W. Yao, D. Xiao, M. A. McGuire, K.-M. C. Fu, and X. Xu, Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe 2/CrI3 Heterostructures, Nano Lett. 18, 3823 (2018)

2018
[39]

T. Zhou, J. Zhang, Y. Xue, B. Zhao, H. Zhang, H. Jiang, and Z . Yang, Quantum spin– quantum anomalous Hall effect with tunable edge states in Sb monolayer -based heterostructures, Phys. Rev. B 94, 235449 (2016)

2016
[40]

Zhang, B

J. Zhang, B. Zhao, T. Zhou, Y. Xue, C. Ma, and Z. Yang, Strong magnetization and Chern insulators in compressed graphene/CrI3 van der Waals heterostructures, Phys. Rev. B 97, 085401 (2018)

2018
[41]

Žutić, A

I. Žutić, A . Matos-Abiague, B . Scharf, H . Dery, and K. Belashchenko, Proximitized materials, Materials Today 22, 85 (2018)

2018
[42]

H. Yu, Y. Wang, Q. Tong, X. Xu, and W. Yao, Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers , Phys. Rev. Lett. 115, 187002 (2015)

2015
[43]

M. Q. Xie, S. L. Zhang, B. Cai, Z. Zhu, Y. S. Zou, and H. B. Zeng, Two-dimensional BX (X=P, As, Sb) semiconductors with mobilities approaching graphene, Nanoscale 8, 13407 (2016)

2016
[44]

Zhang, Q

W.-B. Zhang, Q. Qu, P . Zhu, and C.-H. Lam, Robust intrinsic ferromagnetism and half semiconductivity in stable two -dimensional single -layer chromium trihalides , J. Mater. Chem. C 3, 12457 (2015)

2015
[45]

J. Jung, A. Raoux, Z. Qiao, and A. H. MacDonald, Ab initio theory of moiré superlattice bands in layered two-dimensional materials, Phys. Rev. B 89, 205414 (2014)

2014
[46]

Kresse and J

G. Kresse and J. Furthmuller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set, Comput. Mater. Sci. 6, 15 (1996)

1996
[47]

Kresse and J

G. Kresse and J . Furthmuller, Efficient iterative schemes for ab initio tot al-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996)

1996
[48]

J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996)

1996
[49]

P. E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994)

1994
[50]

Kresse and D

G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999)

1999
[51]

M. X. Chen and M. Weinert, Nano. Lett. 14, 5189 (2014)

2014
[52]

M. X. Chen, W. Chen, Z. Zhang, and M. Weinert, Phys. Rev. B 96, 245111 (2017)

2017

Pith tools

Reviewed August 14, 2026 · model on record in the stance chip above.

[1] [1]

C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y . Xia, T. Cao, W. Bao, C. Wang, Y . Wang, Z. Q. Qiu, R. J. Cava, S. G. Louie, J. Xia, and X. Zhang, Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals, Nature 546, 265 (2017)

work page 2017

[2] [2]

Huang, G

B. Huang, G. Clark, E. Navarro -Moratalla, D. R. Klein, R. Cheng, K. L. Seyler, D. Zhong, E. Schmidgall, M. A. McGuire, D. H. Cobden, W. Yao, D. Xiao, P. Jarillo-Herrero, and X. Xu, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit, Nature 546, 270 (2017)

work page 2017

[3] [3]

K. S. Burch, D. Mandrus, and J.-G. Park, Magnetism in two-dimensional van der Waals materials, Nature 563, 47 (2018)

2018

[4] [4]

Sivadas, S

N. Sivadas, S. Okamoto, and D . Xiao, Gate-Controllable Magneto-optic Kerr Effect in Layered Collinear Antiferromagnets, Phys. Rev. Lett. 117, 267203 (2016)

work page 2016

[5] [5]

Jiang, J

S. Jiang, J. Shan, and K. F. Mak, Electric-field switching of two -dimensional van der Waals magnets, Nat. Mater. 17, 406 (2018)

work page 2018

[6] [6]

Huang, G

B. Huang, G. Clark, D. R. Klein, D. MacNeill, E. Navarro -Moratalla, K. L. Seyler, N. Wilson, M. A. McGuire, D. H. Cobden, D. X iao, W. Yao, P. Jarillo-Herrero, and X. Xu, Electrical control of 2D magnetism in bilayer CrI3, Nat. Nanotech. 13, 544 (2018)

work page 2018

[7] [7]

Z. Wang, T. Zhang, M. Ding, B. Dong, Y. Li, M. Chen, X. Li, J. Huang, H. Wang, X. Zhao, Y. Li, D. Li, C. Jia, L. Sun, H. Guo, Y. Ye, D. Sun, Y. Chen, T. Yang, J. Zhang, S. Ono, Z. Han, and Z. Zhang, Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor, Nat. Nanotech. 13, 554 (2018)

work page 2018

[8] [8]

Y. Deng, Y. Yu, Y. Song, J. Zhang, N. Z. Wang, Y. Z. Wu, J. Zhu, J. Wang, X. H. Chen, and Y . Zhang, Gate-tunable Room -temperature Ferromagnetism in Two -dimensional Fe3GeTe2, Nature 563, 94 (2018)

work page 2018