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Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene
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SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective capping in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.
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One-dimensional Dirac modes in the core of a pentagonal topological crystalline insulator nanowire
Pentagonal SnTe-class nanowires with cationic twin planes are predicted to host two spatially separated helical Dirac modes, one at the core and one at the outer surface.
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