Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature

In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing quantum computing, sensing, and communication technologies. Despite various approaches explored for growing InGaN quantum dots on top of nanowires (NWs), achieving the emission of a single photon at room temperature with sensible efficiency remains a challenge. This challenge is primarily attributed to difficulties in accomplishing the radial confinement limit and the inherent giant built-in potential of the NWQD. In this report, we have employed a novel Plasma Assisted Molecular Beam Epitaxy (PAMBE) growth approach to reduce the diameter of the QD to the excitonic Bohr radius of InGaN, thereby achieving strong lateral confinement. Additionally, we have successfully suppressed the strong built-in potential by reducing the QD diameter. Toward the end of the report, we have demonstrated single-photon emission (${\lambda}$ = 561 nm) at room-temperature from the NWQD and measured the second-order correlation function $g^{2}(0)$ as 0.11, which is notably low compared to other reported findings. Furthermore, the lifetime of carriers in the QD is determined to be 775 ps, inferring a high operational speed of the devices.