Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

(2) Tohoku University); D.D. Awschalom (1); D.K. Young (1); E. Johnston-Halperin (1); H. Ohno (2) ((1) University of California - Santa Barbara; Y. Ohno (2)

arxiv: cond-mat/0201377 · v1 · pith:OLYBJ363new · submitted 2002-01-21 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

D.K. Young (1) , E. Johnston-Halperin (1) , D.D. Awschalom (1) , Y. Ohno (2) , H. Ohno (2) ((1) University of California - Santa Barbara , (2) Tohoku University) This is my paper

classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci

keywords polarizationspindirectionferromagneticparallelperpendiculartransportaddition

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A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (~0.5%) remains unchanged.

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Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

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