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arxiv 2004.01009 v2 pith:OXG5RY2R submitted 2020-04-02 cond-mat.mes-hall

Charge detection in an array of CMOS quantum dots

classification cond-mat.mes-hall
keywords chargequantumarraydetectiondotsarraysmethodssilicon
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

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