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Temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition

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arxiv cond-mat/0102215 v4 pith:OXRW34UP submitted 2001-02-12 cond-mat.supr-con

Temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition

classification cond-mat.supr-con
keywords resistivityhightemperaturetransitionbehaviorchangeconditionmagnetic-field-dependent
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We report the temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition. The superconducting transition width for the resistivity measurement was about 0.4 K, and the low-field magnetization showed a sharp superconducting transition with a transition width of about 1 K. The resistivity in the normal state roughly followed T^2 behavior with smaller residual resistivity ratio (RRR) of 3 over broad temperature region above 100 K rather than reported T^3 behavior with larger RRR value of ~ 20 in the samples made at lower pressures. Also, the resistivity did not change appreciably with the applied magnetic field, which was different from previous report. These differences were discussed with the microscopic and structural change due to the high-pressure sintering.

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