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Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation

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arxiv 1508.06742 v1 pith:PBOLKHAD submitted 2015-08-27 cond-mat.mes-hall physics.optics

Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation

classification cond-mat.mes-hall physics.optics
keywords plasmonsexcitationgraphenetunnelingefficientelectricalelectronemission
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.

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