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Out-of-plane Piezoelectricity and Ferroelectricity in Layered {α}-In2Se3 Nano-flakes

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arxiv 1708.09049 v1 pith:PPT7TLUN submitted 2017-08-29 cond-mat.mtrl-sci

Out-of-plane Piezoelectricity and Ferroelectricity in Layered {α}-In2Se3 Nano-flakes

classification cond-mat.mtrl-sci
keywords alphain2se3nano-flakesapplicationsferroelectricitylayeredmicroscopyout-of-plane
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered ${\alpha}$-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the ${\alpha}$-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for ${\alpha}$-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar ${\alpha}$-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

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