Pith. sign in

REVIEW 4 major objections 6 minor 42 references

Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions

T0 review · 4 major / 6 minor · reviewed 2026-08-14 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read VO$_2$ films grown at 425 $^\circ$C on TiO$_2$(101) reproduce the substrate's atomic step-and-terrace structure and show a bulk-like metal-insulator transition at ~325 K.

desk verdict A credible growth study that delivers a genuinely useful combination—step-flow VO2 films on TiO2(101) with sharp MITs—whose headline claims of atomic smoothness and bulk-like transitions run a bit ahead of the direct evidence. read the letter →

arxiv 1908.02937 v1 pith:RCEC6Z6W submitted 2019-08-08 cond-mat.mtrl-sci

Debasish Mondal , Smruti Rekha Mahapatra , Tanweer Ahmed , Suresh Kumar Podapangi , Arindam Ghosh , Naga Phani B. Aetukuri This is my paper · ORCID
classification cond-mat.mtrl-sci PACS 81.15.Fg71.30.+h68.55.-a
keywords vanadiumdioxidemetal-insulatortransitionpulsedlaserdepositionstep-flowgrowthatomicallysmoothsurfacesTiO2(101)substratesRHEEDepitaxialstrain
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper establishes a growth recipe for vanadium dioxide (VO$_2$) thin films that are simultaneously atomically smooth and electrically bulk-like. On a rutile TiO$_2$(101) substrate annealed to develop atomic steps, depositing VO$_2$ at 425 $^\circ$C puts growth into step-flow mode, so the film copies the substrate's terrace structure instead of nucleating islands. Films between 4 and 16 nm thick retain that surface, and all of them show a sharp metal-insulator transition near 325 K with a resistance change of roughly $10^3$. The significance is that atomically smooth surfaces are the prerequisite for building oxide heterostructures with atomically abrupt interfaces, while a sharp transition above room temperature is what devices need; this combination had not been reported for VO$_2$ before.

What carries the argument

The carrying mechanism is step-flow growth on a vicinal surface: at 425 $^\circ$C the adsorbed species have enough mobility to attach at the atomic steps of the annealed TiO$_2$(101) substrate, so the VO$_2$ film reproduces the substrate's step-and-terrace structure rather than forming islands. The signature is the absence of RHEED intensity oscillations, which would indicate layer-by-layer nucleation, together with AFM images showing clean terraces and no islands at step edges. The other load-bearing element is substrate preparation: annealing TiO$_2$(101) at 950$-$1000 $^\circ$C under flowing oxygen creates the atomic step-and-terrace template, while temperatures above 1000 $^\circ$C cause step bunching.

What would settle it

A cross-sectional electron-microscope image showing a rough or diffuse film-substrate interface, a high-resolution scan revealing islands on the terraces, or a composition measurement indicating significant oxygen deficiency would each settle the claim against it.

Watch

Extended reading notes

Core claim

The paper claims that atomically smooth, single-crystalline VO$_2$(101) films with bulk-like metal-insulator transitions can be grown on vicinal rutile TiO$_2$(101) substrates by choosing a deposition temperature that favors step-flow growth. At 425 $^\circ$C the film inherits the substrate's step-and-terrace morphology, and the absence of RHEED intensity oscillations is interpreted as step flow rather than layer-by-layer or island growth. At lower temperatures (375$-$410 $^\circ$C) a previously unreported mixed mode appears: three-dimensional islands decorate the step edges while terraces grow layer-by-layer. The films are coherently strained to the substrate (about 0.9% out-of-plane compressive strain) and exhibit a sharp transition at ~325 K with ~$10^3$ resistance change, with no systematic thickness dependence between 4 and 16 nm. The paper's contribution is showing that near-ideal surfaces and bulk-like transitions can be achieved in the same VO$_2$ films on TiO$_2$(101).

Load-bearing premise

The central claim of atomic smoothness rests on surface microscopy and diffraction rather than cross-sectional imaging or direct composition measurement, so hidden sub-nanometre roughness, a non-abrupt interface, or an off-stoichiometric film would weaken it.

Editorial extensions

If this is right

  • Films as thin as 4 nm show a sharp transition near 325 K with roughly $10^3$ resistance change, so ultra-thin VO$_2$ remains usable for devices requiring a high on/off ratio.
  • The step-and-terrace surface is retained up to 16 nm, opening a thickness window for heterostructures with atomically abrupt interfaces.
  • The transition temperature is about 325 K, slightly below the bulk value near 340 K, consistent with coherent epitaxial strain, and does not shift systematically with thickness from 4 to 16 nm.
  • The mixed growth mode at 375$-$410 $^\circ$C (3D islands at step edges with 2D layer-by-layer growth on terraces) is a distinct kinetic regime that the authors suggest could be used for directed growth of VO$_2$ nanostructures.
  • Because the recipe depends on substrate preparation and deposition temperature rather than material-specific tricks, it should transfer to related rutile oxides such as CrO$_2$.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the same recipe transfers to other rutile oxides, atomically abrupt binary-oxide heterostructures could be assembled without perovskite-style buffer layers, extending interface engineering to a new family of materials.
  • The thickness independence of the transition between 4 and 16 nm suggests the strain state is essentially fixed by 4 nm; growing films thinner than 4 nm would show where surface and interface effects begin to shift or broaden the transition.
  • The step-edge islanding seen at intermediate temperatures hints at a kinetic asymmetry between terrace and step-edge attachment; a systematic study of island density versus deposition rate at fixed temperature could quantify that asymmetry.
  • These films could serve as a clean testbed for separating intrinsic metal-insulator physics from disorder broadening by comparing their transition sharpness with that of deliberately roughened films.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 6 minor

Summary. The paper reports pulsed laser deposition growth of VO2 thin films on annealed rutile TiO2(101) substrates, demonstrating that deposition at 425 °C produces films that retain the substrate's atomic step-and-terrace structure for thicknesses from 4 to 16 nm, consistent with step-flow growth. These films show a metal-insulator transition at T_MIT ≈ 325 K with a resistance change of about three orders of magnitude. The authors argue that this combination of near-ideal atomically smooth surfaces and sharp MITs in the same films has not been achieved previously, and they propose that such films are suitable for devices and for building rutile-oxide heterostructures.

Significance. If fully substantiated, this is a useful advance: a reproducible route to atomically smooth, epitaxial VO2 films on TiO2(101) with sharp MITs would enable interface engineering in rutile-oxide heterostructures and provide a platform for studying strain effects on the MIT. The growth-mode assignment is credible and internally consistent: the systematic substrate-temperature series, the correlation between RHEED intensity oscillations and AFM-observed island density, and the retention of step-and-terrace morphology across thicknesses are all coherent. The transport measurements are direct, cover five thicknesses, and show consistent behavior. The SI strain calculation is a parameter-free forward consistency check that predicts the XRD peak position from bulk lattice constants and a literature Poisson ratio; this is a strength, though the Poisson ratio is not independently measured here. The main weaknesses are that 'atomically smooth' and 'single-crystalline' are inferred without quantitative surface metrics or in-plane structural probes, and 'bulk-like' is not benchmarked against a bulk crystal in the same geometry.

major comments (4)
  1. [Figures 2e and 3a–d]
  2. [Figure 4 and accompanying text]
  3. [Figure 3e and RHEED insets]
  4. [Methods (PLD conditions)]
minor comments (6)
  1. [Figure 2f]
  2. [Figure 3e]
  3. [Text (page 4)]
  4. [Figure 4 and text]
  5. [Supplementary Information, Eq. (8)]
  6. [Abstract and conclusions]

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: the central claims are direct experimental observations, and the only derived quantity (SI strain/XRD check) is a consistency calculation with literature constants, not a fitted prediction.

full rationale

The central claims—step-flow growth, retention of the substrate's atomic step-terrace structure, single-crystallinity, and a sharp metal-insulator transition—are supported by direct AFM, RHEED, XRD, and transport measurements. None of these is obtained by fitting a model or by defining an input in terms of the claimed output. The only calculation in the paper is the Supplementary Material out-of-plane strain estimate, which combines bulk lattice constants, TiO2 substrate lattice constants, and v=0.25 from Ref. [1] to compute an expected (21bar1)M XRD angle of 37.33°, then compares it with the observed ~37.4°. This is a consistency check, not a prediction derived from the paper's own fitted values; the self-cited Poisson ratio is a standard material constant and is not load-bearing for the headline claims. Missing cross-sectional TEM, quantitative roughness, and stoichiometry analysis are evidence-completeness and interpretation risks that affect certainty, but they are not circularity: no derivation reduces by construction to its own inputs.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

The central claims are experimental observations. The auxiliary strain calculation relies on a coherent-strain assumption and a Poisson ratio from the authors' prior work. The growth-mode interpretation relies on standard RHEED and AFM interpretations.

assumptions (4)
  • domain assumption VO2 films on TiO2(101) are fully coherently strained; in-plane film lattice parameters equal the substrate lattice parameters.
    SI Section I, strain calculation; used to compute out-of-plane strain and predict the XRD peak position.
  • domain assumption AFM step height on annealed TiO2(101) equals one interplanar (101) spacing.
    Figure 1b; the paper states this but no line profile is shown.
  • domain assumption The absence of RHEED oscillations at 425 °C indicates step-flow growth.
    Figure 2a,e; standard interpretation but not directly verified with atomic-resolution imaging.
  • domain assumption Poisson's ratio v=0.25 for VO2, taken from ref 1, is applicable to the thin-film strain calculation.
    SI Section I; a material parameter input from prior literature, not fitted to this paper's data.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions." pith.science (2026). https://pith.science/paper/RCEC6Z6W

@misc{pith2026190802937,
  author       = {Pith},
  title        = {Pith review of: Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/RCEC6Z6W}},
  note         = {Machine review of arXiv:1908.02937}
}
abstract

Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$.

Figures

Figures reproduced from arXiv: 1908.02937 by the authors.

Figure 1
Figure 1. FIG. 1. AFM images of TiO [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. (a) RHEED intensity oscillations during VO [PITH_FULL_IMAGE:figures/full_fig_p002_2.png] view at source ↗
Figure 3
Figure 3. FIG. 3. AFM images of VO [PITH_FULL_IMAGE:figures/full_fig_p003_3.png] view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: FIG. 4. Resistance versus temperature plots of VO [PITH_FULL_IMAGE:figures/full_fig_p004_4.png]

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

42 extracted references · 42 canonical work pages

  1. [1]

    Kawasaki , author K

    author author M. Kawasaki , author K. Takahashi , author T. Maeda , author R. Tsuchiya , author M. Shinohara , author O. Ishiyama , author T. Yonezawa , author M. Yoshimoto , \ and\ author H. Koinuma ,\ @noop journal journal Science \ volume 266 ,\ pages 1540 ( year 1994 ) NoStop

    work page 1994

  2. [2]

    Ohtomo \ and\ author H

    author author A. Ohtomo \ and\ author H. Hwang ,\ @noop journal journal Nature \ volume 427 ,\ pages 423 ( year 2004 ) NoStop

    work page 2004

  3. [3]

    Reyren , author S

    author author N. Reyren , author S. Thiel , author A. Caviglia , author L. F. \ Kourkoutis , author G. Hammerl , author C. Richter , author C. Schneider , author T. Kopp , author A.-S. \ R \"u etschi , author D. Jaccard , et al. ,\ @noop journal journal Science \ volume 317 ,\ pages 1196 ( year 2007 ) NoStop

    work page 2007

  4. [4]

    Brinkman , author M

    author author A. Brinkman , author M. Huijben , author M. Van Zalk , author J. Huijben , author U. Zeitler , author J. Maan , author W. G. \ van der Wiel , author G. Rijnders , author D. H. \ Blank , \ and\ author H. Hilgenkamp ,\ @noop journal journal Nat. Mater. \ volume 6 ,\ pages 493 ( year 2007 ) NoStop

    work page 2007

  5. [5]

    Mannhart \ and\ author D

    author author J. Mannhart \ and\ author D. Schlom ,\ @noop journal journal Science \ volume 327 ,\ pages 1607 ( year 2010 ) NoStop

    work page 2010

  6. [6]

    Thiel , author G

    author author S. Thiel , author G. Hammerl , author A. Schmehl , author C. Schneider , \ and\ author J. Mannhart ,\ @noop journal journal Science \ volume 313 ,\ pages 1942 ( year 2006 ) NoStop

    work page 1942

  7. [7]

    Salluzzo , author J

    author author M. Salluzzo , author J. Cezar , author N. Brookes , author V. Bisogni , author G. De Luca , author C. Richter , author S. Thiel , author J. Mannhart , author M. Huijben , author A. Brinkman , et al. ,\ @noop journal journal Phys. rev. lett. \ volume 102 ,\ pages 166804 ( year 2009 ) NoStop

    work page 2009

  8. [8]

    Chakhalian , author J

    author author J. Chakhalian , author J. Freeland , author H.-U. \ Habermeier , author G. Cristiani , author G. Khaliullin , author M. Van Veenendaal , \ and\ author B. Keimer ,\ @noop journal journal Science \ volume 318 ,\ pages 1114 ( year 2007 ) NoStop

    work page 2007

Show all 42 references
  1. [9]

    Shibuya , author M

    author author K. Shibuya , author M. Kawasaki , \ and\ author Y. Tokura ,\ @noop journal journal Phys. Rev. B \ volume 82 ,\ pages 205118 ( year 2010 ) NoStop

    2010

  2. [10]

    Eyert ,\ @noop journal journal Phys

    author author V. Eyert ,\ @noop journal journal Phys. Rev. Lett. \ volume 107 ,\ pages 016401 ( year 2011 ) NoStop

    2011

  3. [11]

    Pardo \ and\ author W

    author author V. Pardo \ and\ author W. E. \ Pickett ,\ @noop journal journal Phys. Rev. Lett. \ volume 102 ,\ pages 166803 ( year 2009 ) NoStop

    2009

  4. [12]

    author author M. M. \ Qazilbash , author M. Brehm , author B.-G. \ Chae , author P.-C. \ Ho , author G. O. \ Andreev , author B.-J. \ Kim , author S. J. \ Yun , author A. Balatsky , author M. Maple , author F. Keilmann , et al. ,\ @noop journal journal Science \ volume 318 ,\ ...

    2007

  5. [13]

    Haverkort , author Z

    author author M. Haverkort , author Z. Hu , author A. Tanaka , author W. Reichelt , author S. Streltsov , author M. Korotin , author V. Anisimov , author H. Hsieh , author H.-J. \ Lin , author C. Chen , et al. ,\ @noop journal journal Phys. Rev. Lett. \ volume 95 ,\ pages 1964...

    2005

  6. [14]

    Berglund \ and\ author H

    author author C. Berglund \ and\ author H. Guggenheim ,\ @noop journal journal Phys. Rev. \ volume 185 ,\ pages 1022 ( year 1969 ) NoStop

    1969

  7. [15]

    Berglund \ and\ author A

    author author C. Berglund \ and\ author A. Jayaraman ,\ @noop journal journal Phys. Rev. \ volume 185 ,\ pages 1034 ( year 1969 ) NoStop

    1969

  8. [16]

    author author J. B. \ Goodenough ,\ @noop journal journal J. Solid State Chem. \ volume 3 ,\ pages 490 ( year 1971 ) NoStop

    1971

  9. [17]

    Morin ,\ @noop journal journal Phys

    author author F. Morin ,\ @noop journal journal Phys. Rev. Lett. \ volume 3 ,\ pages 34 ( year 1959 ) NoStop

    1959

  10. [18]

    Laverock , author L

    author author J. Laverock , author L. Piper , author A. Preston , author B. Chen , author J. McNulty , author K. Smith , author S. Kittiwatanakul , author J. Lu , author S. Wolf , author P.-A. \ Glans , et al. ,\ @noop journal journal Phys. Rev. B \ volume 85 ,\ pages 081104 (...

    2012

  11. [19]

    Lazarovits , author K

    author author B. Lazarovits , author K. Kim , author K. Haule , \ and\ author G. Kotliar ,\ @noop journal journal Phys. Rev. B \ volume 81 ,\ pages 115117 ( year 2010 ) NoStop

    2010

  12. [20]

    Muraoka , author Y

    author author Y. Muraoka , author Y. Ueda , \ and\ author Z. Hiroi ,\ @noop journal journal J. Phys. Chem. Solids \ volume 63 ,\ pages 965 ( year 2002 ) NoStop

    2002

  13. [21]

    Nakano , author K

    author author M. Nakano , author K. Shibuya , author D. Okuyama , author T. Hatano , author S. Ono , author M. Kawasaki , author Y. Iwasa , \ and\ author Y. Tokura ,\ @noop journal journal Nature \ volume 487 ,\ pages 459 ( year 2012 ) NoStop

    2012

  14. [22]

    Okazaki , author H

    author author K. Okazaki , author H. Wadati , author A. Fujimori , author M. Onoda , author Y. Muraoka , \ and\ author Z. Hiroi ,\ @noop journal journal Phys. Rev. B \ volume 69 ,\ pages 165104 ( year 2004 ) NoStop

    2004

  15. [23]

    Newns , author J

    author author D. Newns , author J. Misewich , author C. Tsuei , author A. Gupta , author B. Scott , \ and\ author A. Schrott ,\ @noop journal journal Appl. Phys. Lett. \ volume 73 ,\ pages 780 ( year 1998 ) NoStop

    1998

  16. [24]

    Yajima , author T

    author author T. Yajima , author T. Nishimura , \ and\ author A. Toriumi ,\ @noop journal journal Nat. Commun. \ volume 6 ,\ pages 10104 ( year 2015 ) NoStop

    2015

  17. [25]

    Muraoka \ and\ author Z

    author author Y. Muraoka \ and\ author Z. Hiroi ,\ @noop journal journal Appl. Phys. Lett. \ volume 80 ,\ pages 583 ( year 2002 ) NoStop

    2002

  18. [26]

    author author N. B. \ Aetukuri , author A. X. \ Gray , author M. Drouard , author M. Cossale , author L. Gao , author A. H. \ Reid , author R. Kukreja , author H. Ohldag , author C. A. \ Jenkins , author E. Arenholz , et al. ,\ @noop journal journal Nat. Phys. \ volume 9 ,\ pa...

    2013

  19. [27]

    Jeong , author N

    author author J. Jeong , author N. Aetukuri , author T. Graf , author T. D. \ Schladt , author M. G. \ Samant , \ and\ author S. S. \ Parkin ,\ @noop journal journal Science \ volume 339 ,\ pages 1402 ( year 2013 ) NoStop

    2013

  20. [28]

    Ramamoorthy , author D

    author author M. Ramamoorthy , author D. Vanderbilt , \ and\ author R. King-Smith ,\ @noop journal journal Phys. Rev. B \ volume 49 ,\ pages 16721 ( year 1994 ) NoStop

    1994

  21. [29]

    Diebold ,\ @noop journal journal Surf

    author author U. Diebold ,\ @noop journal journal Surf. Sci. Rep. \ volume 48 ,\ pages 53 ( year 2003 ) NoStop

    2003

  22. [30]

    author author N. P. \ Aetukuri ,\ @noop journal Ph.D. thesis, Stanford University, 2013 \ NoStop

    2013

  23. [31]

    Li \ and\ author J

    journal author author J. Li \ and\ author J. Dho ,\ @noop journal journal J. Cryst. Growth \ volume 404 ,\ pages 84 ( year 2014 ) NoStop

    2014

  24. [32]

    Jeong , author N

    author author J. Jeong , author N. B. \ Aetukuri , author D. Passarello , author S. D. \ Conradson , author M. G. \ Samant , \ and\ author S. S. \ Parkin ,\ @noop journal journal Proc. Natl. Acad. Sci. U.S.A. \ volume 112 ,\ pages 1013 ( year 2015 ) NoStop

    2015

  25. [33]

    Martens , author N

    author author K. Martens , author N. Aetukuri , author J. Jeong , author M. G. \ Samant , \ and\ author S. S. \ Parkin ,\ @noop journal journal Appl. Phys. Lett. \ volume 104 ,\ pages 081918 ( year 2014 ) NoStop

    2014

  26. [34]

    author author G. H. \ Gilmer \ and\ author M. H. \ Grabow ,\ @noop journal journal JOM \ volume 39 ,\ pages 19 ( year 1987 ) NoStop

    1987

  27. [35]

    Hong , author H

    author author W. Hong , author H. N. \ Lee , author M. Yoon , author H. M. \ Christen , author D. H. \ Lowndes , author Z. Suo , \ and\ author Z. Zhang ,\ @noop journal journal Phys. Rev. Lett. \ volume 95 ,\ pages 095501 ( year 2005 ) NoStop

    2005

  28. [36]

    Koster , author G

    author author G. Koster , author G. J. \ Rijnders , author D. H. \ Blank , \ and\ author H. Rogalla ,\ @noop journal journal Appl. phys. lett. \ volume 74 ,\ pages 3729 ( year 1999 ) NoStop

    1999

  29. [37]

    Liu , author H

    author author M. Liu , author H. Y. \ Hwang , author H. Tao , author A. C. \ Strikwerda , author K. Fan , author G. R. \ Keiser , author A. J. \ Sternbach , author K. G. \ West , author S. Kittiwatanakul , author J. Lu , et al. ,\ @noop journal journal Nature \ volume 487 ,\ p...

    2012

  30. [38]

    author author M. J. \ Dicken , author K. Aydin , author I. M. \ Pryce , author L. A. \ Sweatlock , author E. M. \ Boyd , author S. Walavalkar , author J. Ma , \ and\ author H. A. \ Atwater ,\ @noop journal journal Opt. Express \ volume 17 ,\ pages 18330 ( year 2009 ) NoStop

    2009

  31. [39]

    Kabashin , author P

    author author A. Kabashin , author P. Evans , author S. Pastkovsky , author W. Hendren , author G. Wurtz , author R. Atkinson , author R. Pollard , author V. Podolskiy , \ and\ author A. Zayats ,\ @noop journal journal Nat. Mater. \ volume 8 ,\ pages 867 ( year 2009 ) NoStop

    2009

  32. [40]

    Ichimiya \ and\ author P

    author author A. Ichimiya \ and\ author P. I. \ Cohen ,\ @noop title Reflection High-Energy Electron Diffraction \ ( publisher Cambridge University Press, Cambridge ,\ year 2004 ) NoStop

    2004

  33. [41]

    Kawatani , author T

    author author K. Kawatani , author T. Kanki , \ and\ author H. Tanaka ,\ @noop journal journal Phys. Rev. B \ volume 90 ,\ pages 054203 ( year 2014 ) NoStop

    2014

  34. [42]

    Cai , author X

    author author T. Cai , author X. Li , author F. Wang , author S. Ju , author J. Feng , \ and\ author C.-D. \ Gong ,\ @noop journal journal Nano. lett. \ volume 15 ,\ pages 6434 ( year 2015 ) NoStop

    2015

Pith tools

Reviewed August 14, 2026 · model on record in the stance chip above.