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Imaging Hydrodynamic Electrons Flowing Without Landauer-Sharvin Resistance

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arxiv 2111.06412 v1 pith:RLNLDWDW submitted 2021-11-11 cond-mat.mes-hall cond-mat.str-el

Imaging Hydrodynamic Electrons Flowing Without Landauer-Sharvin Resistance

classification cond-mat.mes-hall cond-mat.str-el
keywords resistanceelectronicfundamentalhydrodynamicimagingelectronslandauer-sharvinlimit
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Electrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conductance limit of non-interacting electrons. Recent years have seen growing evidence of hydrodynamic electronic phenomena, prompting recent theories to ask whether an electronic fluid can radically break the fundamental Landauer-Sharvin limit. Here, we use single-electron transistor imaging of electronic flow in high-mobility graphene Corbino disk devices to answer this question. First, by imaging ballistic flows at liquid-helium temperatures, we observe a Landauer-Sharvin resistance that does not appear at the contacts but is instead distributed throughout the bulk. This underpins the phase-space origin of this resistance - as emerging from spatial gradients in the number of conduction modes. At elevated temperatures, by identifying and accounting for electron-phonon scattering, we reveal the details of the purely hydrodynamic flow. Strikingly, we find that electron hydrodynamics eliminates the bulk Landuer-Sharvin resistance. Finally, by imaging spiraling magneto-hydrodynamic Corbino flows, we reveal the key emergent length scale predicted by hydrodynamic theories - the Gurzhi length. These observations demonstrate that electronic fluids can dramatically transcend the fundamental limitations of ballistic electrons, with important implications for fundamental science and future technologies

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