Hole Mobility Model for Si Double-Gate Junctionless Transistors

Fan Chen; Jun Z. Huang; Kangliang Wei; Wei E. I. Sha

REVIEW

Hole Mobility Model for Si Double-Gate Junctionless Transistors

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1801.06526 v1 pith:RRYJYTGZ submitted 2017-11-18 physics.app-ph cond-mat.mtrl-sci

Hole Mobility Model for Si Double-Gate Junctionless Transistors

Fan Chen , Kangliang Wei , Wei E. I. Sha , Jun Z. Huang This is my paper

classification physics.app-ph cond-mat.mtrl-sci

keywords holemobilitydouble-gateequationjunctionlessmodeltransistorsaccounting

verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved

0 comments

Share X Bluesky LinkedIn Reddit HN

abstract

In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band $k\cdot p$ Schr\"{o}dinger equation and Poisson equation are solved self-consistently. The obtained wave-functions and energies are stored in look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula accounting for impurity, acoustic and optical phonon, and surface roughness scattering. Initial benchmark results are shown.

Hole Mobility Model for Si Double-Gate Junctionless Transistors

discussion (0)