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Interfacial superconductivity and a Se-vacancy ordered insulating phase in the FeSe/PbOx heterostructures
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Interfacial superconductivity and a Se-vacancy ordered insulating phase in the FeSe/PbOx heterostructures
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The discovery of high-temperature superconductivity in FeSe/SrTiO3 has sparked significant interests in exploring new superconducting systems with engineered interfaces. Here, using molecular beam epitaxy growth, we successfully fabricate FeSe/PbOx heterostructures and discover superconductivities in three different monolayer FeSe-related interfaces. We observe superconducting gaps of 13~14 meV in the monolayer FeSe films grown on two different phases of PbOx. Moreover, we discover a new insulating Fe10Se9 phase with an ordered $\sqrt{5}\times\sqrt{5}$ Se-vacancy structure. Our first-principles calculation suggests that this new insulating phase originates from electronic correlation. Intriguingly, an additional monolayer FeSe film grown on the insulating Fe10Se9 also exhibits superconductivity with the gap size of 5 meV. Our results suggest that the work function differences between the monolayer FeSe and the substrates, which can induce band bending and charge transfer, are crucial for the interfacial superconductivity.
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