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Spontaneous interlayer compression in commensurately stacked van der Waals heterostructures

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arxiv 2012.11464 v1 pith:T2NGP3RI submitted 2020-12-21 cond-mat.mtrl-sci

Spontaneous interlayer compression in commensurately stacked van der Waals heterostructures

classification cond-mat.mtrl-sci
keywords heterostructureschargecompressionstackingbulkcompareddensitydichalcogenides
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Interest in layered two dimensional materials, particularly stacked heterostructures of transition metal dichalcogenides, has led to the need for a better understanding of the structural and electronic changes induced by stacking. Here, we investigate the effects of idealized heterostructuring, with periodic commensurate stacking, on the structural, electronic, and vibrational properties, when compared to the counterpart bulk transition metal dichalcogenide. We find that in heterostructures with dissimilar chalcogen species there is a strong compression of the inter-layer spacing, compared to the bulk compounds. This compression of the heterostructure is caused by an increase in the strength of the induced polarization interaction between the layers, but not a full charge transfer. We argue that this effect is real, not due to the imposed commensurability, and should be observable in heterostructures combining different chalcogens. Interestingly, we find that incommensurate stacking of Ti-based dichalcogenides leads to the stabilization of the charge density wave phonon mode, which is unstable in the 1T phase at low temperature. Mixed Ti- and Zr-heterostructures are still unstable, but with a charge density wave or a ferroelectric instability.

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