Pith. sign in

REVIEW

Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv cond-mat/0607670 v1 pith:T47MD24Y submitted 2006-07-26 cond-mat.mes-hall cond-mat.mtrl-sci

J. Moser , M. Zenger , C. Gerl , D. Schuh , R. Meier , P. Chen , G. Bayreuther , W. Wegscheider
show 5 more authors
D. Weiss C.-H. Lai R.-T. Huang M. Kosuth H. Ebert
This is my paper
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords gaasdependenteffecttunnelbiasinterfaceinterfacesinversion
verification ladder T0 review T1 audit T2 compute T3 formal
0 comments
read the original abstract

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.

Discussion (0). Sign in to comment.

Pith tools