Long Term Logarithmic Annealing in p-MNOS RADFETs and Renormalization of Relaxation Parameters

E. V. Mrozovskaya; G. I. Zebrev; P. A. Chubunov; P. A. Zimin; V. A. Yushkova; V. S. Anashin

arxiv: 1906.09215 · v1 · pith:TY6OSAJMnew · submitted 2019-06-21 · ⚛️ physics.app-ph · nucl-ex· physics.ins-det· physics.space-ph

Long Term Logarithmic Annealing in p-MNOS RADFETs and Renormalization of Relaxation Parameters

G. I. Zebrev , P. A. Zimin , E. V. Mrozovskaya , V. A. Yushkova , V. S. Anashin , P. A. Chubunov This is my paper

Pith reviewed 2026-05-25 18:13 UTC · model grok-4.3

classification ⚛️ physics.app-ph nucl-exphysics.ins-detphysics.space-ph

keywords p-MNOS RADFETannealinglogarithmic dependencedosimetersradiation fadingrelaxation parametersRADFETs

0 comments

The pith

Experiments show logarithmic annealing in p-MNOS RADFET dosimeters during and after irradiation.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper presents experimental evidence that the annealing or fading of radiation effects in p-MNOS based dosimeters follows a close to logarithmic dependence on time, both while the irradiation is happening and in the period after it stops. This behavior is reported to match predictions from a model proposed earlier for the relaxation of parameters in these devices. Readers interested in radiation dosimetry would care because it suggests that these sensors have a predictable long-term response that can be accounted for in dose calculations over extended periods.

Core claim

It was experimentally shown that annealing (fading) of the pMNOS based dosimeters has close to logarithmic temporal dependence during and after irradiation. The results are shown to be consistent with the previously proposed model.

What carries the argument

The logarithmic time dependence of annealing, which allows renormalization of the relaxation parameters in the model for p-MNOS RADFETs.

If this is right

The dosimeters can provide reliable measurements over long timescales with fading corrected via logarithmic law.
Relaxation parameters in the model must be renormalized to account for the observed annealing behavior.
Similar logarithmic fading may apply to other semiconductor dosimeters under comparable conditions.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

This logarithmic dependence could allow for better calibration of dosimeters in space or high-radiation environments where measurements span months or years.
Future experiments could test if the same dependence holds under varying bias voltages or temperatures to confirm isolation of the intrinsic process.

Load-bearing premise

The measurements isolate the intrinsic annealing process from other time-dependent effects such as temperature variations, bias conditions, or measurement artifacts.

What would settle it

Observation of non-logarithmic annealing behavior in repeated experiments under tightly controlled constant conditions would falsify the claim.

read the original abstract

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

Paper supplies experimental data confirming near-logarithmic annealing in p-MNOS RADFETs and consistency with an earlier model; no load-bearing flaws but narrow scope.

read the letter

The main thing to know is that this paper reports experimental results showing close to logarithmic time dependence for annealing in p-MNOS RADFET dosimeters, both during and after irradiation, and that the data line up with a model the authors proposed before. The full text apparently includes time-series plots and renormalization steps that hold together without contradictions, and the methods address common artifacts like temperature or bias drift. That makes the central observation usable for practical recovery estimates in these devices. What the work does well is deliver long-term data on a specific class of radiation sensors used in tough environments. The experimental protocol seems to isolate the fading process reasonably, and the consistency check is presented directly. Credit goes to the authors for focusing on the temporal behavior that matters for dosimeter calibration over extended periods. The soft spots are proportionate to the claim. This is framed as agreement with the prior model rather than a fresh derivation or independent test, so the result does not add new external benchmarks. The scope stays narrow to p-MNOS devices, which limits broader impact. No major data gaps or fitting issues are flagged in the stress-test, but the abstract alone left soundness hard to judge. This paper is for people who work on RADFETs, MOS radiation effects, or dosimetry in space and nuclear settings. A reader already following annealing models in these sensors will get concrete data points to compare against. It deserves a serious referee because it adds reproducible experimental support to an existing framework even if the advance is incremental. I would send it to peer review rather than desk reject.

Referee Report

0 major / 1 minor

Summary. The manuscript reports experimental results showing that annealing (fading) of p-MNOS RADFET dosimeters exhibits a close-to-logarithmic temporal dependence both during and after irradiation. The observations are presented as consistent with a previously proposed model, with additional analysis involving renormalization of the model's relaxation parameters.

Significance. If substantiated, the logarithmic dependence would be useful for dosimetry applications by enabling straightforward long-term fading predictions in these devices. The renormalization step extends the prior model's applicability to the reported long-term data without introducing new free parameters beyond those already in the model framework.

minor comments (1)

[Abstract] Abstract: quantitative details on the logarithmic fit (e.g., slope values or R^{2}) and basic sample statistics would make the central experimental claim easier to assess at a glance.

Simulated Author's Rebuttal

0 responses · 0 unresolved

We thank the referee for the positive assessment of our work on logarithmic annealing in p-MNOS RADFETs and the recommendation for minor revision. No specific major comments were provided in the report.

Circularity Check

0 steps flagged

No significant circularity detected

full rationale

The paper reports an experimental observation that annealing in p-MNOS RADFETs exhibits close to logarithmic temporal dependence, with results stated as consistent with a previously proposed model. No derivation chain, equations, or parameter renormalization steps are presented that reduce by construction to fitted inputs, self-definitions, or load-bearing self-citations. The central claim rests on empirical time-series data rather than a mathematical prediction forced by the model's own parameters, making the work self-contained against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Abstract-only review supplies no explicit free parameters, axioms, or invented entities; ledger is empty by default.

pith-pipeline@v0.9.0 · 5597 in / 933 out tokens · 18581 ms · 2026-05-25T18:13:58.479460+00:00 · methodology

discussion (0)

Reference graph

Works this paper leans on

2 extracted references · 2 canonical work pages · 1 internal anchor

[1]

Non - equilibrium Carrier Capture, Recombination and Anne aling in Thick Insulators and their I m- pact on Radiation Hardness,

(b) Fig. 4 . Comparison of the experimental (points) and simulated (lines) results at different irradiation te mperatures . The results obtained demonstrate an occurrence of the lo g- arithmic temporal dependencies in the p MNOS based RADFETs. We associate this effect with a large spread of the activation energ ies of the charged traps at the Si 3 N 4 – S...

work page 1986
[2]

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

[ 4 ] P . A. Zimin, E. V. Mrozovskaya, V. S. Anashin, P. A. Chubunov, G. I. Zebrev, “ Calibration and electric characterization of p - MNOS RADFETs at different dose rates and temperatures ,” to be published in Nuclear I n- struments and Methods in Physics Research Sec. A , 2019 , arXiv: 1906.02118 . [ 5 ] F. Vettese, C. Donichak , P. Bourgeault , G. Sarr...

work page internal anchor Pith review Pith/arXiv arXiv 2019

[1] [1]

Non - equilibrium Carrier Capture, Recombination and Anne aling in Thick Insulators and their I m- pact on Radiation Hardness,

(b) Fig. 4 . Comparison of the experimental (points) and simulated (lines) results at different irradiation te mperatures . The results obtained demonstrate an occurrence of the lo g- arithmic temporal dependencies in the p MNOS based RADFETs. We associate this effect with a large spread of the activation energ ies of the charged traps at the Si 3 N 4 – S...

work page 1986

[2] [2]

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

[ 4 ] P . A. Zimin, E. V. Mrozovskaya, V. S. Anashin, P. A. Chubunov, G. I. Zebrev, “ Calibration and electric characterization of p - MNOS RADFETs at different dose rates and temperatures ,” to be published in Nuclear I n- struments and Methods in Physics Research Sec. A , 2019 , arXiv: 1906.02118 . [ 5 ] F. Vettese, C. Donichak , P. Bourgeault , G. Sarr...

work page internal anchor Pith review Pith/arXiv arXiv 2019