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Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode

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arxiv cond-mat/0305124 v1 pith:TZYLTDCW submitted 2003-05-07 cond-mat.mes-hall cond-mat.mtrl-sci

A. Slobodskyy , C. Gould , T. Slobodskyy , C.R. Becker , G. Schmidt , L.W. Molenkamp This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords spinmagneticlevelsmaterialquantumresonantsplittingtunneling
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We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

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