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Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

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arxiv cond-mat/0004312 v2 pith:UG6SJXZU submitted 2000-04-18 cond-mat.str-el cond-mat.mes-hall

Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

V. Senz (1) , T. Ihn (1) , T. Heinzel (1) , K. Ensslin (1) , G. Dehlinger (2) , D. Grutzmacher (2) , U. Gennser (2) ((1) Laboratory of Solid State Physics , ETH Zurich
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Switzerland. (2) Paul Scherrer Institut Switzerland)
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We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.

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