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A 3-dimensional scanning trapped-ion probe
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abstract
Single-atom quantum sensors offer high spatial resolution and high sensitivity to electric and magnetic fields. Among them, trapped ions offer exceptional performance in sensing electric fields, which has been used in particular to probe these in the proximity of metallic surfaces. However, the flexibility of previous work was limited by the use of radio-frequency trapping fields, which has restricted spatial scanning to linear translations, and calls into question whether observed phenomena are connected to the presence of the radio-frequency fields. Here, using a Penning trap instead, we demonstrate a single ion probe which offers three-dimensional position scanning at distances between $50$ $\mu\mathrm{m}$ and $450$ $\mu\mathrm{m}$ from a metallic surface and above a $200\times200$ $\mu\mathrm{m}^{2}$ area, allowing us to reconstruct static and time-varying electric as well as magnetic fields. We use this to map charge distributions on the metallic surface and noise stemming from it. The methods demonstrated here allow similar probing to be carried out on samples with a variety of materials, surface constitutions and geometries, providing a new tool for surface science.
Forward citations
Cited by 2 Pith papers
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A High Motional Frequency Ion Trapping Regime for Quantum Information Science
High motional frequency ion trapping reduces decoherence effects and accelerates experimental duty cycles in quantum information science.
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Single Electrons in a Dual-Plane Printed-Circuit-Board Penning Trap
Demonstrates single-electron trapping and detection in a two-dimensionally scalable dual-plane PCB Penning trap with characterization of loading, damping, temperature, and magnetron growth.
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