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Electronic properties of graphene nanoribbons under gate electric fields

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arxiv 1209.5280 v1 pith:VCD5G6KP submitted 2012-09-24 cond-mat.mes-hall cond-mat.mtrl-sci

Tobias Burnus , Gustav Bihlmayer , Daniel Wortmann , Yuriy Mokrousov , Stefan Blügel , Klaus Michael Indlekofer This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords armchairelectricfieldstatesgategraphenenanoribbonsallowed
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Quantum-dot states in graphene nanoribbons (GNR) were calculated using density-functional theory, considering the effect of the electric field of gate electrodes. The field is parallel to the GNR plane and was generated by an inhomogeneous charge sheet placed atop the ribbon. Varying the electric field allowed to observe the development of the GNR states and the formation of localized, quantum-dot-like states in the band gap. The calculation has been performed for armchair GNRs and for armchair ribbons with a zigzag section. For the armchair GNR a static dielectric constant of {\epsilon} approx. 4 could be determined.

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