pith. sign in

arxiv: 2504.20572 · v1 · pith:VNP6JQX5new · submitted 2025-04-29 · ❄️ cond-mat.mes-hall

A foundry-fabricated spin qubit unit cell with in-situ dispersive readout

classification ❄️ cond-mat.mes-hall
keywords cellquantumqubitreadoutunitsingle-shotcomputinggate
0
0 comments X
read the original abstract

Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Forward citations

Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Energy efficiency of quantum computers

    quant-ph 2026-05 unverdicted novelty 7.0

    A new definition of quantum computer energy efficiency is introduced and applied to five major qubit platforms, yielding concrete consumption estimates for current systems and a benchmarking framework for future archi...

  2. Multiplexed cryo-CMOS control of an isolated double quantum dot

    cond-mat.mes-hall 2026-04 unverdicted novelty 6.0

    Multiplexed cryo-CMOS control enables stable biasing and fast pulsing of an isolated silicon double quantum dot at 0.5 K, supporting deterministic multi-electron loading and resolution of tunneling events across charg...

  3. Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS

    quant-ph 2026-05 unverdicted novelty 5.0

    Experimental demonstration of universal controllability, parallel readout, and certified three-qubit GHZ entanglement with extended lifetime in a two-unit-cell SiMOS quantum processor.