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Significant enhancement of upper critical fields by doping and strain in Fe-based superconductors

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arxiv 1108.5194 v2 pith:VSAS3RSO submitted 2011-08-25 cond-mat.supr-con cond-mat.mtrl-sci

C. Tarantini , A. Gurevich , J. Jaroszynski , F. Balakirev , E. Bellingeri , I. Pallecchi , C. Ferdeghini , B. Shen
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H.H. Wen D. C. Larbalestier
This is my paper · ORCID
classification cond-mat.supr-concond-mat.mtrl-sci
keywords ba1-xkxas2fe2dopingfese1-xtexstrainenhancementalmostanalysiscompared
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We report measurements of Hc2(T) up to 85 Tesla on Ba1-xKxAs2Fe2 single crystals and FeSe1-xTex films tuned by doping and strain. We observed an Hc2 enhancement by nearly 25 T at 30 K for the optimally-doped Ba1-xKxAs2Fe2 as compared to the previous results and extraordinarily high slopes dHc2/dT = 250-500 T/K near Tc in FeSe1-xTex indicating an almost complete suppression of the orbital pair-breaking. Theoretical analysis of Hc2(T) in FeSe1-xTex and the optimally doped Ba1-xKxAs2Fe2 predicts an inhomogeneous Fulde-Ferrel-Larkin-Ovchinnikov state for H//ab and T < 3-10 K, and shows that Hc2 in multiband Fe based superconductor can be enhanced by doping and strain much more effectively than by the conventional way of increasing disorder.

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