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Role of microstructure in porous silicon gas sensors for NO₂

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arxiv cond-mat/0311275 v1 pith:WAJFH7ET submitted 2003-11-12 cond-mat.mtrl-sci

Role of microstructure in porous silicon gas sensors for NO₂

Zeno Gaburro , Paolo Bettotti , Massimo Saiani , Lorenzo Pavesi , Lucio Pancheri , Claudio J. Oton , Nestor Capuj This is my paper
classification cond-mat.mtrl-sci
keywords poroussiliconmicrostructuresensitiveachievedbehaviorbelowbest
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the structure is by modifying the composition of the electrochemical solution. We have found that best results are achieved using ethanoic solutions with HF concentration levels between 13% and 15%.

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