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Electronic ratchet effect in a moir\'e system: signatures of excitonic ferroelectricity

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arxiv 2306.03922 v1 pith:WBXD7WN2 submitted 2023-06-06 cond-mat.mes-hall cond-mat.mtrl-scicond-mat.str-el

classification cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el
keywords electronicferroelectricitydipolarexcitonsferroelectricmoirdriveneffect
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Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the discovery of an electronic ratchet effect that manifests itself as switchable electronic ferroelectricity in a layer-contrasting graphene-boron nitride moir\'e heterostructure. Our engineered layer-asymmetric moir\'e potential landscapes result in layer-polarized localized and itinerant electronic subsystems. At particular fillings of the localized subsystem, we find a ratcheting injection of itinerant carriers in a non-volatile manner, leading to a highly unusual ferroelectric response. Strikingly, the remnant polarization can be stabilized at multiple (quasi-continuous) states with behavior markedly distinct from known ferroelectrics. Our experimental observations, simulations, and theoretical analysis suggest that dipolar excitons are the driving force and elementary ferroelectric units in our system. This signifies a new type of electronic ferroelectricity where the formation of dipolar excitons with aligned moments generates a macroscopic polarization and leads to an electronically-driven ferroelectric response, which we term excitonic ferroelectricity. Such new ferroelectrics, driven by quantum objects like dipolar excitons, could pave the way to innovative quantum analog memory and synaptic devices.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Dynamic Interfacial Quantum Dipoles in Charge Transfer Heterostructures

    cond-mat.mes-hall 2025-08 conditional novelty 7.0 of 10

    Hysteresis in graphene/hBN/α-RuCl3 charge transfer devices arises from dynamically switchable interfacial quantum dipoles, not from charge traps.

  2. Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures

    cond-mat.mes-hall 2025-06 conditional novelty 7.0 of 10

    The angular alignment between two encapsulating BN layers, not graphene's alignment with BN, controls anomalous gating, with gate ineffectiveness and hysteresis appearing only in a 15-45 degree BN-BN window.

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